Oxide implantation for threshold voltage control

Microelectronics Reliability ◽

10.1016/0026-2714(91)90187-c ◽

1991 ◽

Vol 31 (5) ◽

pp. 1056

Keyword(s):

Threshold Voltage ◽

Voltage Control

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Interface Engineering for Precise Threshold Voltage Control in Multilayer-Channel Thin Film Transistors

Advanced Materials Interfaces ◽

10.1002/admi.201600713 ◽

2016 ◽

Vol 3 (24) ◽

pp. 1600713 ◽

Author(s):

Ji Hoon Park ◽

Fwzah H. Alshammari ◽

Zhenwei Wang ◽

Husam N. Alshareef

Keyword(s):

Thin Film ◽

Threshold Voltage ◽

Thin Film Transistors ◽

Voltage Control ◽

Interface Engineering

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Threshold-voltage control and enhancement-mode characteristics in multilayer tin disulfide field-effect transistors by gate-oxide passivation with an alkylphosphonic acid self-assembled monolayer

Journal of Applied Physics ◽

10.1063/1.4914488 ◽

2015 ◽

Vol 117 (10) ◽

pp. 104509 ◽

Author(s):

Ute Zschieschang ◽

Tanja Holzmann ◽

Alexander Kuhn ◽

Mahdieh Aghamohammadi ◽

Bettina V. Lotsch ◽

...

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Voltage Control ◽

Self Assembled Monolayer ◽

Enhancement Mode ◽

Tin Disulfide ◽

Mode Characteristics ◽

Alkylphosphonic Acid

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Delay and Power Monitoring Schemes for Minimizing Power Consumption by Means of Supply and Threshold Voltage Control in Active and Standby Modes

IEEE Journal of Solid-State Circuits ◽

10.1109/jssc.2006.870796 ◽

2006 ◽

Vol 41 (4) ◽

pp. 805-814 ◽

Author(s):

M. Nomura ◽

Y. Ikenaga ◽

K. Takeda ◽

Y. Nakazawa ◽

Y. Aimoto ◽

...

Keyword(s):

Power Consumption ◽

Threshold Voltage ◽

Voltage Control ◽

Power Monitoring

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The Concept of LDSI (Locally-Differentiated-Scanning Ion Implantation) for the Fine Threshold Voltage Control in Nano-Scale FETs

10.1063/1.2401462 ◽

2006 ◽

Author(s):

Min-Yong Lee ◽

S. W. Jin ◽

Y. S. Sohn ◽

S. K. Na ◽

K. B. Rouh ◽

...

Keyword(s):

Ion Implantation ◽

Threshold Voltage ◽

Voltage Control ◽

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Tantalum-gate SOI MOSFET's featuring excellent threshold voltage control in low-power applications

1995 IEEE International SOI Conference Proceedings ◽

10.1109/soi.1995.526478 ◽

2002 ◽

Author(s):

H. Shimada ◽

T. Ushiki ◽

Y. Hirano ◽

T. Ohmi

Keyword(s):

Low Power ◽

Threshold Voltage ◽

Voltage Control

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Threshold voltage control in NiSi-gated MOSFETs through silicidation induced impurity segregation (SIIS)

IEEE International Electron Devices Meeting 2003 ◽

10.1109/iedm.2003.1269288 ◽

2004 ◽

Author(s):

J. Kedzierski ◽

D. Boyd ◽

P. Ronsheim ◽

S. Zafar ◽

J. Newbury ◽

...

Keyword(s):

Threshold Voltage ◽

Voltage Control ◽

Impurity Segregation

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Threshold voltage control of copper phthalocyanine based organic field-effect transistors with a poly (N-vinylcarbazole) buffer layer

2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology ◽

10.1109/icsict.2010.5667637 ◽

2010 ◽

Author(s):

Ying Wang ◽

Yunqi Liu ◽

Yabin Song ◽

Chong-an Di ◽

Yanming Sun ◽

...

Keyword(s):

Buffer Layer ◽

Threshold Voltage ◽

Field Effect ◽

Copper Phthalocyanine ◽

Field Effect Transistors ◽

Voltage Control ◽

Organic Field Effect Transistors

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Threshold voltage control of bottom-contact n-channel organic thin-film transistors using modified drain/source electrodes

Applied Physics Letters ◽

10.1063/1.3090489 ◽

2009 ◽

Vol 94 (8) ◽

pp. 083310 ◽

Author(s):

Masatoshi Kitamura ◽

Yasutaka Kuzumoto ◽

Shigeru Aomori ◽

Masakazu Kamura ◽

Jong Ho Na ◽

...

Keyword(s):

Thin Film ◽

Threshold Voltage ◽

Thin Film Transistors ◽

Voltage Control ◽

Organic Thin Film Transistors ◽

Organic Thin Film ◽

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Subnanowatt Carbon Nanotube Complementary Logic Enabled by Threshold Voltage Control

Nano Letters ◽

10.1021/nl402478p ◽

2013 ◽

Vol 13 (10) ◽

pp. 4810-4814 ◽

Author(s):

Michael L. Geier ◽

Pradyumna L. Prabhumirashi ◽

Julian J. McMorrow ◽

Weichao Xu ◽

Jung-Woo T. Seo ◽

...

Keyword(s):

Carbon Nanotube ◽

Threshold Voltage ◽

Voltage Control

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Threshold voltage control of a thin-film transistor using an Al–Zn–O channel prepared using atomic layer deposition by controlling the Al dopant positions

RSC Advances ◽

10.1039/c6ra16683k ◽

2016 ◽

Vol 6 (95) ◽

pp. 92534-92540 ◽

Author(s):

Eom-Ji Kim ◽

Won-Ho Lee ◽

Sung-Min Yoon

Keyword(s):

Thin Film ◽

Atomic Layer Deposition ◽

Threshold Voltage ◽

Thin Film Transistor ◽

Voltage Control ◽

Atomic Layer ◽

Layer Deposition ◽

Doped Zno ◽

We proposed a methodology for controlling the threshold voltage by adjusting the position of the Al dopant layer within an Al-doped-ZnO active channel of a thin film transistor.

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