Optical and thermal cross-section of interface states from photocapacitance measurements

1986 ◽  
Vol 29 (11) ◽  
pp. 1195-1203 ◽  
Author(s):  
J.R. Morante ◽  
A. Herms ◽  
J. Samitier ◽  
A. Cornet ◽  
E. Lora-Tamayo
1986 ◽  
Vol 168 (1-3) ◽  
pp. 665-671 ◽  
Author(s):  
A. Herms ◽  
J.R. Morante ◽  
J. Samitier ◽  
A. Cornet ◽  
P. Cartujo ◽  
...  

2019 ◽  
Vol 55 (5) ◽  
Author(s):  
J. Lerendegui-Marco ◽  
C. Guerrero ◽  
T. Belgya ◽  
B. Maróti ◽  
K. Eberhardt ◽  
...  

2019 ◽  
Vol 2019 (9) ◽  
Author(s):  
R Kitahara ◽  
K Hirota ◽  
S Ieki ◽  
T Ino ◽  
Y Iwashita ◽  
...  

Abstract In a neutron lifetime measurement at the Japan Proton Accelerator Complex, the neutron lifetime is calculated from the neutron decay rate and the incident neutron flux. The flux is obtained by counting the protons emitted from the neutron absorption reaction of ${}^{3}{\rm He}$ gas, which is diluted in a mixture of working gas in a detector. Hence, it is crucial to determine the amount of ${}^{3}{\rm He}$ in the mixture. In order to improve the accuracy of the number density of the ${}^{3}{\rm He}$ nuclei, we have suggested using the ${}^{14}{\rm N}({\rm n},{\rm p}){}^{14}{\rm C}$ reaction as a reference because this reaction involves similar kinetic energy to the $^3$He(n,p)$^3$H reaction and a smaller reaction cross section to introduce reasonable large partial pressure. The uncertainty of the recommended value of the cross section, however, is not satisfied with our requirement. In this paper we report the most accurate experimental value of the cross section of the $^{14}$N(n,p)$^{14}$C reaction at a neutron velocity of 2200 m s$^{-1}$, measured relative to the $^3$He(n,p)$^3$H reaction. The result was 1.868 $\pm$ 0.003 (stat.) $\pm$ 0.006 (sys.) b. Additionally, the cross section of the $^{17}$O(n,$\alpha$)$^{14}$C reaction at the neutron velocity is also redetermined as 249 $\pm$ 6 mb.


1986 ◽  
Vol 168 (1-3) ◽  
pp. A137
Author(s):  
A. Hermas ◽  
J.R. Morante ◽  
J. Samitier ◽  
A. Cornet ◽  
P. Cartujo ◽  
...  

1961 ◽  
Vol 39 (8) ◽  
pp. 1184-1192 ◽  
Author(s):  
W. H. Walker ◽  
R. E. Green

Cadmium ratio measurements have been made in similar lattice positions in ZEEP with thin foils of Sm152 and gold. From a comparison of these cadmium ratios we find[Formula: see text]If gσ0 is assumed to be 212 ± 12 barns, then I′ = 3100 ± 200 barns. On the assumption that only one resonance in Sm152, at 8 ev, contributes appreciably to both the resonance integral and the thermal cross section, it follows that g = 1 and that Γ, the width at half-maximum of the total cross section resonance, is 193 ± 5 milli-ev. Because of the appreciable disagreement between this value and one reported earlier, a new time-of-flight measurement of the resonance parameters has been made, and it is reported in the next paper (Chrien 1961).


2009 ◽  
Vol 615-617 ◽  
pp. 497-500 ◽  
Author(s):  
Lars S. Løvlie ◽  
Ioana Pintilie ◽  
S. Kumar C.P. ◽  
Ulrike Grossner ◽  
Bengt Gunnar Svensson ◽  
...  

The purpose of this work is to compare the density of shallow interface states (Dit) at the interface of SiO2/SiC MOS capacitors as deducted by the conductance spectroscopy (CS) and thermally dielectric relaxation current (TDRC) techniques. Both capacitors of 4H- and 6H-SiC (n-type) are investigated, and both ordinary dry oxidation and an improved industrial procedure have been employed. The two techniques are found to give rather good agreement for interface states located ≥0.3 eV below the conduction band edge (Ec) while for more shallow states vastly different distributions of Dit are obtained. Different reasons for these contradictory results are discussed, such as strong temperature and energy dependence of the capture cross section of the shallow interface states.


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