Interface States in 4H- and 6H-SiC MOS Capacitors: A Comparative Study between Conductance Spectroscopy and Thermal Dielectric Relaxation Current Technique

2009 ◽  
Vol 615-617 ◽  
pp. 497-500 ◽  
Author(s):  
Lars S. Løvlie ◽  
Ioana Pintilie ◽  
S. Kumar C.P. ◽  
Ulrike Grossner ◽  
Bengt Gunnar Svensson ◽  
...  
Keyword(s):  
Comparative Study ◽  
Dielectric Relaxation ◽  
Cross Section ◽  
Capture Cross Section ◽  
Interface States ◽  
Conduction Band Edge ◽  
Capture Cross ◽  
Mos Capacitors ◽  
Dry Oxidation ◽  
Good Agreement

The purpose of this work is to compare the density of shallow interface states (Dit) at the interface of SiO2/SiC MOS capacitors as deducted by the conductance spectroscopy (CS) and thermally dielectric relaxation current (TDRC) techniques. Both capacitors of 4H- and 6H-SiC (n-type) are investigated, and both ordinary dry oxidation and an improved industrial procedure have been employed. The two techniques are found to give rather good agreement for interface states located ≥0.3 eV below the conduction band edge (Ec) while for more shallow states vastly different distributions of Dit are obtained. Different reasons for these contradictory results are discussed, such as strong temperature and energy dependence of the capture cross section of the shallow interface states.

Interface States at Au/Gaas Schottky Contacts

1985 ◽  
Vol 54 ◽  
Author(s):  
J. Werner ◽  
K. Ploog
Keyword(s):  
Cross Section ◽  
Capture Cross Section ◽  
Wide Frequency Range ◽  
Interface States ◽  
Schottky Contacts ◽  
Conduction Band Edge ◽  
Capture Cross ◽  
Trap States ◽  
Semiconductor Contacts ◽  
Transistor Model

ABSTRACTWe present a new method for the characterization of traps at the interfacial layer of metal/semiconductor contacts. The method is based on measurements of the ac-admittance of Schottky contacts over a wide frequency range. The frequency dependence is analyzed within a new Trap Transistor Model which explains the ac-behavior as well as the dc-characteristics. In particular we propose that the ac-current across the interface consists of capacitive as well as of conductive parts. We are able to deduce the density of trap states at the majority carrier Fermi level as well as the capture cross section of the traps. The model is applied to Au/GaAs-Schottky contacts. We find a weak energy dependence for the density of interface states as well as for their capture cross section within the energy range of 0.45eV to 0.57eV below the conduction band edge.

Behavior of Electron Traps Induced by Phosphidization and Nitridation of GaAs Surfaces

1998 ◽  
Vol 510 ◽  
Author(s):  
Satoshi Nozu ◽  
Koichiro Matsuda ◽  
Takashi Sugino
Keyword(s):  
Energy Level ◽  
Cross Section ◽  
Capture Cross Section ◽  
Conduction Band Edge ◽  
Capture Cross ◽  
Electron Traps ◽  
Plasma Treatments ◽  
Transient Spectroscopy ◽  
Capacitance Transient ◽  
Isothermal Capacitance Transient Spectroscopy

AbstractGaAs is treated with remote PH3 and N2 plasmas. Electron traps induced by plasma treatments are investigated by isothermal capacitance transient spectroscopy measurements. The EL2 trap is detected in the as-grown GaAs. The TP1 trap(Ec-0.26eV) is generated in GaAs phosphidized for 10min, while the TN1 trap(Ec-0.66eV) is induced in GaAs nitrided for 30min. It is found that the TP1 trap is changed to the another trap with an energy level as shallow as 0.16eV below the conduction band edge and a capture cross section as small as 1.8×10−21cm2 by treating with N2 plasma subsequently after PH3 plasma treatment.

The Photoconductivity Exponent For Recombination At Dangling Bonds In a-Si:H

1986 ◽  
Vol 70 ◽  
Author(s):  
F. Vaillant ◽  
D. Jousse
Keyword(s):  
Cross Section ◽  
Capture Cross Section ◽  
Correlation Energy ◽  
Detailed Balance ◽  
Parametric Representation ◽  
Capture Cross ◽  
Dangling Bond ◽  
Dangling Bonds ◽  
Bond Density ◽  
Good Agreement

ABSTRACTA theoretical model has been developed for recombination at dangling bonds which explains the γ variations between 0.5 and 1 depending on the Fermi level position. The occupation probabilities of the T3+, T3° and T3- states under illumination have been calculated using the statistics of correlated levels. The γ exponent is derived through a parametric representation of the equations of detailed balance and charge conservation. A good agreement with experiment is obtained with a dangling bond density of 5×1015 cm-3, a placing of the T3° level at 0.95 eV below Ec, an effective correlation energy of 0.4 eV and a charged to neutral capture cross section ratio of 50.

Current-Stress-Induced Interface States in p-Si Mos Diodes Detected by a.c. Conductance Measurement

1995 ◽  
Vol 391 ◽  
Author(s):  
Masao Inoue ◽  
Junji Shirafuji
Keyword(s):  
Metal Oxide ◽  
Cross Section ◽  
Capture Cross Section ◽  
Interface States ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Capture Cross ◽  
Conductance Measurement ◽  
Current Stress ◽  
Energy Profiles

AbstractEffect of Fowler-Nordheim current stress on (100) p-Si metal/oxide/semiconductor diodes have been studied by means of a.c. conductance measurement. Growth of two distinct peaks are observed in the depletion and the inversion resions corresponding to the generation of two kinds of defects in the upper and lower halves of the bandgap. These defects show different behaviors against the current stress in the energy profiles of the density and the capture cross section. The degradation of the Si/SiO2 interface is discussed in relation to the defect creation.

Measurements of the neutron capture cross section of 243Am around 23.5 keV

2021 ◽  
pp. 1-6
Author(s):  
Yu Kodama ◽  
Tatsuya Katabuchi ◽  
Gerard Rovira ◽  
Atsushi Kimura ◽  
Shoji Nakamura ◽  
...  
Keyword(s):  
Cross Section ◽  
Neutron Capture ◽  
Capture Cross Section ◽  
Capture Cross ◽  
Neutron Capture Cross Section
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