scholarly journals Effect of oxide resistance on the characterization of interface trap density in MOS structures

1991 ◽  
Vol 34 (12) ◽  
pp. 1449-1454
Author(s):  
Jing-Jenn Lin ◽  
Jenn-Gwo Hwu
Keyword(s):  
Trap Density ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Mos Structures

Fabrication and characterization of Pt/Al2O3/Y2O3/In0.53Ga0.47As MOSFETs with low interface trap density

2017 ◽  
Vol 110 (4) ◽  
pp. 043501 ◽  
Author(s):  
Seong Kwang Kim ◽  
Dae-Myeong Geum ◽  
Jae-Phil Shim ◽  
Chang Zoo Kim ◽  
Hyung-jun Kim ◽  
...  
Keyword(s):  
Trap Density ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Fabrication And Characterization

Study of interface trap density of AlOxNy/GaN MOS structures

2021 ◽  
Vol 119 (12) ◽  
pp. 122105
Author(s):  
Jianan Song ◽  
Sang-Woo Han ◽  
Haoting Luo ◽  
Jaime Rumsey ◽  
Jacob H. Leach ◽  
...  
Keyword(s):  
Trap Density ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Mos Structures

GaN MOS Structures with Low Interface Trap Density

2021 ◽  
Vol 314 ◽  
pp. 79-83
Author(s):  
Rong Ming Chu
Keyword(s):  
High Frequency ◽  
Electronic Devices ◽  
Surface Preparation ◽  
Trap Density ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Device Performance ◽  
Great Success ◽  
New Device ◽  
Mos Structures

GaN based electronic devices have gained great success in the arena of high-frequency and high-power applications. A high-quality GaN MOS structure has the potential to enable new device designs and higher device performance, thereby bringing the success of GaN electronics to a new level. This paper discusses results of the work on GaN MOS structures show that with adequate surface preparation samples featuring interface trap density down to the ~ 1010 eV-1cm-2 range can be formed.

Characterization of interface trap density of In-rich InGaAs Gate-all-around nanowire MOSFETs

2012 ◽  
Author(s):  
Fahim Ur Rahman ◽  
Md. Shafayat Hossain ◽  
Saeed Uz Zaman Khan ◽  
Rifat Zaman ◽  
Md. Obaidul Hossen ◽  
...  
Keyword(s):  
Trap Density ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Nanowire Mosfets

Analyzing the interface trap density in SiGe capacitors using an abnormal flat band voltage shift at low temperature

2020 ◽  
Vol 13 (11) ◽  
pp. 111006
Author(s):  
Li-Chuan Sun ◽  
Chih-Yang Lin ◽  
Po-Hsun Chen ◽  
Tsung-Ming Tsai ◽  
Kuan-Ju Zhou ◽  
...  
Keyword(s):  
Low Temperature ◽  
Trap Density ◽  
Flat Band ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Flat Band Voltage ◽  
Voltage Shift

Direct Measurement of Top and Sidewall Interface Trap Density in SOI FinFETs

2007 ◽  
Vol 28 (3) ◽  
pp. 232-234 ◽  
Author(s):  
G. Kapila ◽  
B. Kaczer ◽  
A. Nackaerts ◽  
N. Collaert ◽  
G. V. Groeseneken
Keyword(s):  
Direct Measurement ◽  
Trap Density ◽  
Interface Trap Density ◽  
Interface Trap

On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates

2008 ◽  
Vol 55 (2) ◽  
pp. 547-556 ◽  
Author(s):  
Koen Martens ◽  
Chi On Chui ◽  
Guy Brammertz ◽  
Brice De Jaeger ◽  
Duygu Kuzum ◽  
...  
Keyword(s):  
High Mobility ◽  
Trap Density ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Mos Devices ◽  
Semiconductor Substrates

scholarly journals Interface trap density and mobility extraction in InGaAs buried quantum well metal-oxide-semiconductor field-effect-transistors by gated Hall method

2014 ◽  
Vol 104 (13) ◽  
pp. 131605 ◽  
Author(s):  
Thenappan Chidambaram ◽  
Dmitry Veksler ◽  
Shailesh Madisetti ◽  
Andrew Greene ◽  
Michael Yakimov ◽  
...  
Keyword(s):  
Quantum Well ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Trap Density ◽  
Oxide Semiconductor ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Hall Method
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