Characterization of interface trap density of In-rich InGaAs nMOSFETs with ALD Al2O3 as gate dielectric

2010 ◽  
Author(s):  
Saima Sharmin ◽  
Urmita Sikder ◽  
Rifat-Ul-Ferdous ◽  
Quazi D. M. Khosru
Keyword(s):  
Gate Dielectric ◽  
Trap Density ◽  
Interface Trap Density ◽  
Interface Trap

scholarly journals ALD Al2O3 gate dielectric on the reduction of interface trap density and the enhanced photo-electric performance of IGO TFT

RSC Advances ◽  
2020 ◽  
Vol 10 (17) ◽  
pp. 9902-9906 ◽  
Author(s):  
Kuan-Yu Chen ◽  
Chih-Chiang Yang ◽  
Chun-Yuan Huang ◽  
Yan-Kuin Su
Keyword(s):  
Thin Film ◽  
Gallium Oxide ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Trap Density ◽  
Oxide Thin Film ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Indium Gallium ◽  
Al2o3 Gate Dielectric

The amorphous indium gallium oxide thin film transistor was fabricated using a cosputtering method.

Fabrication and characterization of Pt/Al2O3/Y2O3/In0.53Ga0.47As MOSFETs with low interface trap density

2017 ◽  
Vol 110 (4) ◽  
pp. 043501 ◽  
Author(s):  
Seong Kwang Kim ◽  
Dae-Myeong Geum ◽  
Jae-Phil Shim ◽  
Chang Zoo Kim ◽  
Hyung-jun Kim ◽  
...  
Keyword(s):  
Trap Density ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Fabrication And Characterization

Borosilicate Glass (BSG) as Gate Dielectric for 4H-SiC MOSFETs

2018 ◽  
Vol 924 ◽  
pp. 502-505 ◽  
Author(s):  
Yong Ju Zheng ◽  
Tamara Isaacs-Smith ◽  
Ayayi Claude Ahyi ◽  
S. Dhar
Keyword(s):  
Borosilicate Glass ◽  
Field Effect ◽  
Gate Dielectric ◽  
Trap Density ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Interface Traps ◽  
Field Effect Mobility ◽  
Channel Mobility

In this work, we investigate the effect of borosilicate glass (BSG) as gate dielectric on dielectric/4H-SiC interface traps and channel mobility in 4H-SiC MOSFETs. The interface trap characterization by C−ψs analysis and I-V characterization show lower fast interface trap density (Dit) as well as significant improvement of channel field-effect mobility on devices with BSG than that on devices with standard NO anneal. In addition, the results indicate interface trap density decreases with increasing B concentration at the interface of BSG/4H-SiC, which in turn, results in higher channel mobility.

Characterization of interface trap density of In-rich InGaAs Gate-all-around nanowire MOSFETs

2012 ◽  
Author(s):  
Fahim Ur Rahman ◽  
Md. Shafayat Hossain ◽  
Saeed Uz Zaman Khan ◽  
Rifat Zaman ◽  
Md. Obaidul Hossen ◽  
...  
Keyword(s):  
Trap Density ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Nanowire Mosfets

Analyzing the interface trap density in SiGe capacitors using an abnormal flat band voltage shift at low temperature

2020 ◽  
Vol 13 (11) ◽  
pp. 111006
Author(s):  
Li-Chuan Sun ◽  
Chih-Yang Lin ◽  
Po-Hsun Chen ◽  
Tsung-Ming Tsai ◽  
Kuan-Ju Zhou ◽  
...  
Keyword(s):  
Low Temperature ◽  
Trap Density ◽  
Flat Band ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Flat Band Voltage ◽  
Voltage Shift

Direct Measurement of Top and Sidewall Interface Trap Density in SOI FinFETs

2007 ◽  
Vol 28 (3) ◽  
pp. 232-234 ◽  
Author(s):  
G. Kapila ◽  
B. Kaczer ◽  
A. Nackaerts ◽  
N. Collaert ◽  
G. V. Groeseneken
Keyword(s):  
Direct Measurement ◽  
Trap Density ◽  
Interface Trap Density ◽  
Interface Trap

On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates

2008 ◽  
Vol 55 (2) ◽  
pp. 547-556 ◽  
Author(s):  
Koen Martens ◽  
Chi On Chui ◽  
Guy Brammertz ◽  
Brice De Jaeger ◽  
Duygu Kuzum ◽  
...  
Keyword(s):  
High Mobility ◽  
Trap Density ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Mos Devices ◽  
Semiconductor Substrates
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