Ionized impurity scattering in heavily doped p-type InSb thin films

1979 ◽  
Vol 60 (2) ◽  
pp. 249-255 ◽  
Author(s):  
K.V. Krishna ◽  
P.C. Mathur ◽  
A.L. Dawar ◽  
O.P. Taneja
Keyword(s):  
Thin Films ◽  
Impurity Scattering ◽  
Ionized Impurity Scattering ◽  
Insb Thin Films ◽  
Heavily Doped ◽  
P Type

Fabrication of a Peltier Device Based on InSb and SbTe Thin Films

2011 ◽  
Vol 254 ◽  
pp. 50-53 ◽  
Author(s):  
Tatsuya Ishii ◽  
Hideyuki Homma ◽  
Shigeo Yamaguchi
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Beam ◽  
Vapor Phase ◽  
Electron Beam Evaporation ◽  
Peltier Effect ◽  
Insb Thin Films ◽  
Peltier Device ◽  
P Type ◽  
Direct Current Sputtering

We fabricated a thin film Peltier device based on an InSb film and a SbTe film. N-type InSb thin films were grown on sapphire (0001) substrate with InAsSb buffer layer by metalorganic vapor phase epitaxy, and P-type SbTe thin films were deposited on the substrate by electron beam evaporation. N-type and P-type films were separated on the substrate, and between them, a Au thin film was deposited by direct-current sputtering. We observed partial Peltier effect in the device.

A Model for the High Temperature Transport Properties of Heavily Doped P-Type Silicon-Germanium Alloys

1991 ◽  
Vol 234 ◽  
Author(s):  
Cronin B. Vining
Keyword(s):  
High Temperature ◽  
Transport Properties ◽  
Silicon Germanium ◽  
Phonon Scattering ◽  
Impurity Scattering ◽  
Long Wavelength ◽  
Type Silicon ◽  
Heavily Doped ◽  
P Type ◽  
Silicon Germanium Alloys

ABSTRACTA model is presented for the high temperature transport properties of large grain size, heavily doped p-type silicon-germanium alloys. Good agreement with experiment (±10%) is found by considering acoustic phonon and ionized impurity scattering for holes and phonon-phonon, point defect and hole-phonon scattering for phonons. Phonon scattering by holes is found to be substantially weaker than phonon scattering by electrons, which accounts for the larger thermal conductivity values of ptype silicon-germanium alloys compared to similarly doped n-type silicongermanium alloys. The relatively weak scattering of long-wavelength phonons by holes raises the possibility that p-type silicon-germanium alloys may be improved for thermoelectric applications by the addition of an additional phonon scattering mechanism which is effective on intermediate and long-wavelength phonons. Calculations indicate improvements in the thermoelectric figure of merit up to 40% may be possible by incorporating several volume percent of 20 Å radius inclusions into p-type silicon-germanium alloys.

The Effects of the Carrier Concentrations on the Hall Mobilities of ZnO:Al Thin Films Deposited by Magnetron Sputtering

2017 ◽  
Vol 727 ◽  
pp. 938-941
Author(s):  
Xiao Jing Wang ◽  
Yun Zhang
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Magnetron Sputtering ◽  
Carrier Concentration ◽  
Carrier Mobility ◽  
Impurity Scattering ◽  
Flexible Substrates ◽  
Boundary Scattering ◽  
Scattering Mechanism ◽  
Ionized Impurity Scattering

ZnO:Al thin films were deposited on flexible substrates by magnetron sputtering. The effects of the carrier concentrations on the hall mobilities of AZO films were investigated. When the carrier concentration was high (~1020/cm3), the hall mobility decreased with increase of the carrier concentration, showing obvious characteristics of ionized impurity scattering; moreover, the carrier mobility could be expressed to be-2.14/3 proportional of the carrier concentration by combining the results of simulation and experiments.simulation and experiment. When the carrier concentration was about a magnitude of 1019 cm-3, the carrier mobility is influenced by the carrier concentration and grain size, which means the carrier mobility was affected by both the grain boundary scattering and ionized purity scattering mechanism.

Elimination of ionized impurity scattering in heavily doped GaxIn1−xAsyP1−y

1985 ◽  
Vol 47 (8) ◽  
pp. 843-845 ◽  
Author(s):  
L. G. Shantharama ◽  
A. R. Adams ◽  
E. M. Allen ◽  
P. D. Greene
Keyword(s):  
Impurity Scattering ◽  
Ionized Impurity Scattering ◽  
Heavily Doped

Mobility characterization of p-type and n-type strained sil-x-yGexcy/Si Epilayer hall devices

1998 ◽  
Vol 535 ◽  
Author(s):  
Jeff J. Petersoa ◽  
Charles E. Hunt ◽  
Stefan F. Zappe ◽  
Ernst Obeneier ◽  
Richard Westhoff ◽  
...  
Keyword(s):  
Doping Level ◽  
Doping Concentration ◽  
Impurity Scattering ◽  
Temperature Range ◽  
Boron Doped ◽  
Ionized Impurity Scattering ◽  
Van Der Pauw ◽  
P Type

AbstractMobilities in Si1-x-yGex Cy layers were measured using mesa etched Van der Pauw structures for alloy layers with 0 < x < 0.30 and 0 < y < 0.02 and doping levels of 1015 < N < 1018 cm-3. Mobilities in Si1-x-yGex Cy layers with x = 0.27 were found to approach Si mobilities for both μn and μp.While electron mobilities in phosphorous-doped SiGeC decrease with doping concentration, hole mobilities in boron-doped SiGeC increase with doping level, indicating ionized impurity scattering is not dominant for μp over the temperature range studied.

scholarly journals Weak localization in InSb thin films heavily doped with lead

2002 ◽  
Vol 65 (23) ◽  
Author(s):  
M. Oszwałdowski ◽  
T. Berus ◽  
V. K. Dugaev
Keyword(s):  
Thin Films ◽  
Weak Localization ◽  
Insb Thin Films ◽  
Heavily Doped

Ionized impurity scattering in n-doped C60 thin films

2007 ◽  
Vol 91 (9) ◽  
pp. 092118 ◽  
Author(s):  
Kentaro Harada ◽  
Fenghong Li ◽  
Bert Maennig ◽  
Martin Pfeiffer ◽  
Karl Leo
Keyword(s):  
Thin Films ◽  
Impurity Scattering ◽  
Ionized Impurity Scattering
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