Kinetics of the formation of thin films of aluminium oxide in a low temperature plasma

1980 ◽  
Vol 71 (1) ◽  
pp. L17-L19 ◽  
Author(s):  
J. Szczeklik ◽  
E. Schabowska
2020 ◽  
Vol 6 ◽  
pp. 40-55
Author(s):  
N.M. Ivanova ◽  
◽  
E.O. Filippova ◽  
A.N. Aleinik ◽  
V.F. Pichugin ◽  
...  

Effects of the low-temperature plasma exposure, γ-irradiation, and joint g-irradiation and plasma exposure on the structure and surface properties of thin films based on polylactic acid (PLA) have been investigated. Films were obtained by the method a solvent-casting. It has been shown that films based on polylactic acid have topographically different sides: a smoother inner side and embossed outer one. PLA films have properties close to those hydrophobic, with a contact angle in the range of 70°-73° regardless of the surface side and belong to a weakly polar materials. The combined effect of plasma and gamma radiation slightly changes the surface topography. The effect of low-temperature plasma on the surface of the films leads to a decrease in the contact angle by 13°-55° (9-11%) and an increase in surface energy due to the polar component. The results of in vivo experiments on rabbits are presented. Biomicroscopy, optical coherence tomography, morphological and electron microscopic examination of the cornea after implantation of initial and radiation and plasma treated films showed that implantation of the films in the anterior chamber is not accompanied by a pronounced inflammatory reaction and increased intraocular pressure, while maintaining the morphological structure of the cornea almost unchanged.


1971 ◽  
Vol 59 (4) ◽  
pp. 555-572 ◽  
Author(s):  
L.M. Biberman ◽  
I.T. Yakubov ◽  
V.S. Vorob'ev

2009 ◽  
Vol 610-613 ◽  
pp. 353-356
Author(s):  
Jin She Yuan ◽  
Ming Yue Wang ◽  
Guo Hao Yu

Low-temperature plasma deposition of diamond-like carbon (DLC) and gallium nitride thin-films grown on Si substrate by PECVD was investigated using atomic force microscopy and reflectance spectra for photovoltaic devices application. It was found that the morphological features of the GaN film depend on the substrates under the optimum deposition conditions. The optical band gap of the films was approximately 5.5eV for PECVD DLC and approximately 3.3 eV for PECVD GaN.


2006 ◽  
Vol 914 ◽  
Author(s):  
Nagraj S Kulkarni ◽  
Prabhakar Tamirisa ◽  
Galit Levitin ◽  
Richard J Kasica ◽  
Dennis W Hess

AbstractA low temperature plasma etching process for patterning copper interconnects is proposed as a solution to the size effect issue in the resistivity of copper. Key features of this etching process based on a previous thermochemical analysis of the Cu-Cl-H system are discussed. Potential benefits of a subtractive etching scheme based on this process in comparison with the damascene scheme for copper-based interconnect processing in sub-100 nm features are presented in the context of the ITRS roadmap. Preliminary experimental work on plasma etching of Cu thin films using the proposed process is discussed.


2009 ◽  
Vol 43 (6) ◽  
pp. 828-831 ◽  
Author(s):  
A. A. Serdobintsev ◽  
A. G. Veselov ◽  
O. A. Kiryasova ◽  
S. A. Portnov ◽  
D. N. Bratashov

2015 ◽  
Vol 17 (26) ◽  
pp. 17063-17068 ◽  
Author(s):  
Debajyoti Das ◽  
Debjit Kar

Studies on the vertical electrical transport of size-controlled silicon nano-crystallites (Si-ncs) obtained simply by controlling the thickness of the nc-Si:H sub-layer (tnc) in the a-Si:H/nc-Si:H superlattice thin films grown by low temperature plasma processing in PE-CVD.


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