Environmental stability and cryogenic thermal cycling of low-temperature plasma-deposited silicon nitride thin films

Effects of the low-temperature plasma exposure, γ-irradiation, and joint g-irradiation and plasma exposure on the structure and surface properties of thin films based on polylactic acid (PLA) have been investigated. Films were obtained by the method a solvent-casting. It has been shown that films based on polylactic acid have topographically different sides: a smoother inner side and embossed outer one. PLA films have properties close to those hydrophobic, with a contact angle in the range of 70°-73° regardless of the surface side and belong to a weakly polar materials. The combined effect of plasma and gamma radiation slightly changes the surface topography. The effect of low-temperature plasma on the surface of the films leads to a decrease in the contact angle by 13°-55° (9-11%) and an increase in surface energy due to the polar component. The results of in vivo experiments on rabbits are presented. Biomicroscopy, optical coherence tomography, morphological and electron microscopic examination of the cornea after implantation of initial and radiation and plasma treated films showed that implantation of the films in the anterior chamber is not accompanied by a pronounced inflammatory reaction and increased intraocular pressure, while maintaining the morphological structure of the cornea almost unchanged.

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Kinetics of the formation of thin films of aluminium oxide in a low temperature plasma

Thin Solid Films ◽

10.1016/0040-6090(80)90174-1 ◽

1980 ◽

Vol 71 (1) ◽

pp. L17-L19 ◽

Cited By ~ 2

Author(s):

J. Szczeklik ◽

E. Schabowska

Keyword(s):

Thin Films ◽

Low Temperature ◽

Aluminium Oxide ◽

Low Temperature Plasma ◽

Temperature Plasma ◽

Kinetics Of

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Low temperature plasma deposition of silicon nitride to produce ultra-reliable, high performance, low cost sealed chip-on-board (SCOB) assemblies

IEEE Transactions on Components Packaging and Manufacturing Technology Part A ◽

10.1109/95.465139 ◽

1995 ◽

Vol 18 (3) ◽

pp. 471-477 ◽

Cited By ~ 7

Author(s):

R.M. Kubacki

Keyword(s):

Silicon Nitride ◽

Low Temperature ◽

High Performance ◽

Plasma Deposition ◽

Low Cost ◽

Low Temperature Plasma ◽

Temperature Plasma

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Low temperature plasma deposition of silicon nitride from silane and nitrogen plasmas

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.581424 ◽

1998 ◽

Vol 16 (5) ◽

pp. 2794-2803 ◽

Cited By ~ 56

Author(s):

Bengi F. Hanyaloglu ◽

Eray S. Aydil

Keyword(s):

Silicon Nitride ◽

Low Temperature ◽

Plasma Deposition ◽

Low Temperature Plasma ◽

Temperature Plasma ◽

Nitrogen Plasmas

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Low-Temperature Plasma Deposition of Diamond-Like Carbon and III Nitride Thin-Films for Photovoltaic Devices

Materials Science Forum ◽

10.4028/www.scientific.net/msf.610-613.353 ◽

2009 ◽

Vol 610-613 ◽

pp. 353-356

Author(s):

Jin She Yuan ◽

Ming Yue Wang ◽

Guo Hao Yu

Keyword(s):

Thin Films ◽

Low Temperature ◽

Plasma Deposition ◽

Diamond Like Carbon ◽

Low Temperature Plasma ◽

Photovoltaic Devices ◽

Temperature Plasma ◽

Force Microscopy ◽

Atomic Force ◽

Gan Film

Low-temperature plasma deposition of diamond-like carbon (DLC) and gallium nitride thin-films grown on Si substrate by PECVD was investigated using atomic force microscopy and reflectance spectra for photovoltaic devices application. It was found that the morphological features of the GaN film depend on the substrates under the optimum deposition conditions. The optical band gap of the films was approximately 5.5eV for PECVD DLC and approximately 3.3 eV for PECVD GaN.

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