Defect centres in oxygen-deficient RF-sputtered SiO2 films. thermoluminescence

Vacuum ◽  
1974 ◽  
Vol 24 (9) ◽  
pp. 419
Keyword(s):  
Sio2 Films ◽  
Defect Centres

X-ray photoelectron spectroscopy insights on interfaces between SiO2 films and GaN substrates: differences due to depositional technique

2020 ◽  
Vol 59 (9) ◽  
pp. 090902
Author(s):  
Noritake Isomura ◽  
Narumasa Soejima ◽  
Tomohiko Mori ◽  
Satoshi Ikeda ◽  
Atsushi Watanabe ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Sio2 Films ◽  
X Ray

EPR spectra and defect states in glasses of the GexS100-x system

1982 ◽  
Vol 47 (7) ◽  
pp. 1787-1793 ◽  
Author(s):  
Miloslav Frumar ◽  
Gustáv Plesch ◽  
Eva Černošková ◽  
Václav Černý ◽  
Ladislav Tichý ◽  
...  
Keyword(s):  
Experimental Data ◽  
Epr Spectra ◽  
Defect States ◽  
Composition Region ◽  
Active Defect ◽  
Temperature Conditions ◽  
Defect Centres

Glasses of the GexS100-x system were studied in the region of 30 ⪬ x ⪬ 45. The concept of magnetically active defect centres was employed to account for the EPR spectra of pure samples as well as those doped with silver or iodine, prepared in different temperature conditions. In terms of this concept a consistent interpretation of the experimental data could be given for the composition region applied.

Development of the structure of thin SiO2 films during thermal growth on Si substrate

1993 ◽  
Vol 22 (1-4) ◽  
pp. 39-42 ◽  
Author(s):  
I.P. Lisovskii ◽  
V.G. Litovchenko ◽  
V.V. Khatko
Keyword(s):  
Si Substrate ◽  
Sio2 Films ◽  
Thermal Growth

Dielectric breakdown caused by hole-induced-defect in thin SiO2 films

1997 ◽  
Vol 117-118 ◽  
pp. 245-248 ◽  
Author(s):  
Akinobu Teramoto ◽  
Kiyoteru Kobayashi ◽  
Yasuji Matsui ◽  
Makoto Hirayama
Keyword(s):  
Dielectric Breakdown ◽  
Sio2 Films
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