Low temperature pulsed plasma deposition. Part I—a new technique for thin film deposition with complete gas dissociation

Vacuum ◽  
1988 ◽  
Vol 38 (8-10) ◽  
pp. 627-631 ◽  
Author(s):  
G. Scarsbrook ◽  
I.P. Llewellyn ◽  
S.M. Ojha ◽  
R.A. Heinecke
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Plasma Deposition ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
New Technique ◽  
Pulsed Plasma ◽  
A New Technique ◽  
Pulsed Plasma Deposition

A novel industrial thin film deposition technology for sustainable CdTe photovoltaics

2012 ◽  
Vol 1447 ◽  
Author(s):  
P. Nozar ◽  
G. Mittica ◽  
S. Milita ◽  
C. Albonetti ◽  
F. Corticelli ◽  
...  
Keyword(s):  
Thin Film ◽  
Plasma Deposition ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Cubic Phase ◽  
Pulsed Plasma ◽  
Grid Parity ◽  
Type Semiconductor ◽  
Pulsed Plasma Deposition ◽  
Quartz Substrates

ABSTRACTCdTe and CdS are emerging as the most promising materials for thin film photovoltaics in the quest of the achievement of grid parity. The major challenge for the advancement of grid parity is the achievement of high quality at the same time as low fabrication cost. The present paper reports the results of the new deposition technique, Pulsed Plasma Deposition (PPD), for the growth of the CdTe layers on CdS/ZnO/quartz and quartz substrates. The PPD method allows to deposit at low temperature. The optical band gap of deposited layers is 1.50 eV, in perfect accord with the value reported in the literature for the crystalline cubic phase of the CdTe.The films are highly crystalline with a predominant cubic phase, a random orientation of the grains of the film and have an extremely low surface roughness of 4.6±0.7 nm r.m.s.. The low roughness, compared to traditional thermal deposition methods (close space sublimation and vapour transport) permits the reduction of the active absorber and n-type semiconductor layers resulting in a dramatic reduction of material usage and the relative deposition issues like safety, deposition rate and ultimately cost

Atmospheric Pressure Low Temperature Direct Plasma Technology: Status and Challenges for Thin Film Deposition

2012 ◽  
Vol 9 (11-12) ◽  
pp. 1041-1073 ◽  
Author(s):  
Francoise Massines ◽  
Christian Sarra-Bournet ◽  
Fiorenza Fanelli ◽  
Nicolas Naudé ◽  
Nicolas Gherardi
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Atmospheric Pressure ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Plasma Technology

Optimization of a Dual-Mode RF / Microwave Plasma for Amorphous thin film Deposition

1994 ◽  
Vol 336 ◽  
Author(s):  
R. Etemadi ◽  
O. Leroy ◽  
B. Drevillon ◽  
C. Godet
Keyword(s):  
Thin Film ◽  
Microwave Plasma ◽  
Plasma Deposition ◽  
Plasma Chemistry ◽  
High Growth ◽  
Optical Emission ◽  
Thin Film Deposition ◽  
High Growth Rate ◽  
Film Deposition ◽  
Dual Mode

ABSTRACTA new dual-plasma (surface wave-coupled microwave and capacitively-coupled radiofrequency) PECVD reactor for high growth rate of Amorphous insulating alloys is being developped. A high flexibility for thin film materials synthesis is expected, because the energy of the ion bombardment can be monitored independently from the microwave plasma chemistry. In situ diagnostics (Optical EMission Spectroscopy and Spectroscopie Ellipsometry) are used for the optimization of the dual-Mode plasma deposition of hydrogenated Amorphous silicon a-Si:H and silicon oxides a-SiOx:H (with 0 ≤ × ≤ 2). The growth of stoichiometric oxide at 3.3 nm / s has been achieved.

The Plasma Deposition of Semiconductor Multilater Structures

1989 ◽  
Vol 165 ◽  
Author(s):  
Masataka Hirose ◽  
Seiichi Miyazaki
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Plasma Deposition ◽  
Substrate Surface ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Atomic Scale ◽  
Layer By Layer ◽  
X Ray

AbstractThe early stages of thin film deposition from the rf glow discharge of SiH4 or SiH4 + NH3 have been studied by analysing the structure of silicon based multiiayers consisting of hydrogenated amorphous silicon (a-Si:H, 10 – 200 A thick) and stoichiometric silicon nitride (a-Si3N4:H, 25 – 250 A) alternating layers. The x-ray diffraction, its rocking curve and x-ray interference of the multilayers have shown that the amorphous silicon/silicon nitride interface is atomically abrupt and the surfaces of the respective layers are atomically flat regardless of substrate materials. This indicates that the precursors impinging onto a substrate from the gas phase homogeneously cover the growing surface and the layer by layer growth proceeds on atomic scale. In the plasma deposition of the covalently bonded semiconductors and insulators, the island formation on a substrate surface at the beginning of the thin film growth is very unlikely.

scholarly journals Characteristics of a Pulsed Plasma Process and YBaCuO Thin Film Deposition

1991 ◽  
Vol 111 (8) ◽  
pp. 702-710
Author(s):  
Kenji Ebihara ◽  
Toshiyuki Matsumoto ◽  
Tomoaki Ikegami ◽  
Yasunori Shiraishi ◽  
Sadao Maeda
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Pulsed Plasma ◽  
Plasma Process
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