Experimental verification of the impact of mosfet series resistance on device miniaturization down to source-drain areas as small as 0.2 μm by 0.3 μm

1990 ◽  
Vol 11 (1-4) ◽  
pp. 61-64
Author(s):  
Asanga H. Perera ◽  
J. Peter Krusius
Keyword(s):  
Experimental Verification ◽  
Series Resistance ◽  
The Impact ◽  
Device Miniaturization

Automated system for creating training programs for mass professional users

2020 ◽  
pp. 21-27
Author(s):  
V.K. Grigoriev ◽  
A.A. Biryukova ◽  
A. Yu. Volk ◽  
A.S. Ilyushechkin
Keyword(s):  
Experimental Verification ◽  
Training Programs ◽  
Automated System ◽  
Software Product ◽  
Learning Programs ◽  
E Learning ◽  
The Creation ◽  
The Impact

The article discusses the automation of the creation and use of e-learning programs. The impact of automating the learning of a large number of users on the effectiveness of the introduction of a new software product is analyzed. The methods and algorithms that increase the efficiency of creating electronic training programs on example of the author’s automated system “Tutor Builder” are described. The results of experimental verification of the automated system are provided.

scholarly journals In-Situ Measurement of Power Loss for Crystalline Silicon Modules Undergoing Thermal Cycling and Mechanical Loading Stress Testing

Energies ◽  
2020 ◽  
Vol 14 (1) ◽  
pp. 72
Author(s):  
Sergiu Spataru ◽  
Peter Hacke ◽  
Dezso Sera
Keyword(s):  
Thermal Cycling ◽  
Power Loss ◽  
Stress Testing ◽  
Series Resistance ◽  
Short Circuit ◽  
In Situ Measurement ◽  
Mechanical Degradation ◽  
Model Parameters ◽  
The Impact

An in-situ method is proposed for monitoring and estimating the power degradation of mc-Si photovoltaic (PV) modules undergoing thermo-mechanical degradation tests that primarily manifest through cell cracking, such as mechanical load tests, thermal cycling and humidity freeze tests. The method is based on in-situ measurement of the module’s dark current-voltage (I-V) characteristic curve during the stress test, as well as initial and final module flash testing on a Sun simulator. The method uses superposition of the dark I-V curve with final flash test module short-circuit current to account for shunt and junction recombination losses, as well as series resistance estimation from the in-situ measured dark I-Vs and final flash test measurements. The method is developed based on mc-Si standard modules undergoing several stages of thermo-mechanical stress testing and degradation, for which we investigate the impact of the degradation on the modules light I-V curve parameters, and equivalent solar cell model parameters. Experimental validation of the method on the modules tested shows good agreement between the in-situ estimated power degradation and the flash test measured power loss of the modules, of up to 4.31 % error (RMSE), as the modules experience primarily junction defect recombination and increased series resistance losses. However, the application of the method will be limited for modules experiencing extensive photo-current degradation or delamination, which are not well reflected in the dark I-V characteristic of the PV module.

scholarly journals The Role of Silicon Heterojunction and TCO Barriers on the Operation of Silicon Heterojunction Solar Cells: Comparison between Theory and Experiment

2021 ◽  
Vol 2021 ◽  
pp. 1-12
Author(s):  
Yaser Abdulraheem ◽  
Moustafa Ghannam ◽  
Hariharsudan Sivaramakrishnan Radhakrishnan ◽  
Ivan Gordon
Keyword(s):  
Solar Cells ◽  
Large Scale ◽  
Surface Passivation ◽  
Series Resistance ◽  
Crystalline Silicon ◽  
Thermionic Emission ◽  
Analytical Description ◽  
Theoretical Explanation ◽  
The Impact

Photovoltaic devices based on amorphous silicon/crystalline silicon (a-Si:H/c-Si) heterojunction interfaces hold the highest efficiency as of date in the class of silicon-based devices with efficiencies exceeding 26% and are regarded as a promising technology for large-scale terrestrial PV applications. The detailed understanding behind the operation of this type of device is crucial to improving and optimizing its performance. SHJ solar cells have primarily two main interfaces that play a major role in their operation: the transparent conductive oxide (TCO)/a-Si:H interface and the a-Si:H/c-Si heterojunction interface. In the work presented here, a detailed analytical description is provided for the impact of both interfaces on the performance of such devices and especially on the device fill factor ( FF ). It has been found that the TCO work function can dramatically impact the FF by introducing a series resistance element in addition to limiting the forward biased current under illumination causing the well-known S-shape characteristic in the I-V curve of such devices. On the other hand, it is shown that the thermionic emission barrier at the heterojunction interface can play a major role in introducing an added series resistance factor due to the intrinsic a-Si:H buffer layer that is usually introduced to improve surface passivation. Theoretical explanation on the role of both interfaces on device operation based on 1D device simulation is experimentally verified. The I-V characteristics of fabricated devices were compared to the curves produced by simulation, and the observed degradation in the FF of fabricated devices was explained in light of analytical findings from simulation.

scholarly journals Experimental Verification of the Impact of Analog CMS on CIS Readout Noise

2020 ◽  
Vol 67 (3) ◽  
pp. 774-784 ◽  
Author(s):  
Raffaele Capoccia ◽  
Assim Boukhayma ◽  
Christian Enz
Keyword(s):  
Experimental Verification ◽  
Readout Noise ◽  
The Impact

scholarly journals The impact of silicon solar cell architecture and cell interconnection on energy yield in hot & sunny climates

2017 ◽  
Vol 10 (5) ◽  
pp. 1196-1206 ◽  
Author(s):  
Jan Haschke ◽  
Johannes P. Seif ◽  
Yannick Riesen ◽  
Andrea Tomasi ◽  
Jean Cattin ◽  
...  
Keyword(s):  
Solar Cell ◽  
Silicon Solar Cell ◽  
Series Resistance ◽  
Energy Yield ◽  
Cell Architecture ◽  
The Impact

A series resistance induced by cell interconnections will lead to a worse TCPMPP of solar modules compared with cells.

scholarly journals Experimental verification of a numerical surface roughness model for metallic bodies under large plastic strain

2019 ◽  
Vol 252 ◽  
pp. 05005
Author(s):  
Paweł Sidun
Keyword(s):  
Surface Roughness ◽  
Plastic Strain ◽  
Experimental Verification ◽  
Surface Profile ◽  
Surface Force ◽  
Numerical Calculations ◽  
Real Surface ◽  
Friction Process ◽  
Arithmetic Average ◽  
The Impact

The present work describes selected aspects of numerical modelling of the process of bonding metal alloys with consideration for micro-roughness, as well as experimental verification. The plastic-elastic contact between two deformable bodies was investigated in a DEFROM FEM environment, and verified at the test stand. The present paper demonstrates selected results of contact modelling investigated using aluminium-copper samples, in relation to their elastic-plastic range. The real surface profile helped to create a mathematical model of surface roughness measured using a laser microscope. Dependency between a blade of a tool and a feed was used to build a numerical model of roughness based on the arithmetic average value of the roughness profile. The work presents also a process of simplification of real surface roughness for the needs of numerical calculations. The paper investigates an impact of wave roughness at obtained values on effective plastic strain and stress. Additionally, numerical analysis shows a need to enter a new roughness wave correction factor assuming a zero value of the coefficient of friction. This is due to the interaction of metallic surfaces within the plastic contact zone. The obtained results allow the estimation of the impact of surface force interaction expressed by the wave coefficient factor. The experimental verification of numerical calculations allowed the estimation of the actual impact of the micro-cutting process in the entire friction process. Further analysis of obtained results permits the author to explain the surface phenomena occurring during the friction process, such as adhesion or diffusion, and outline the development direction of numerical methods.

Abstract 16097: Impact of Device Miniaturization on Implantable Loop Recorder Utilization in the Pediatric Population: An Analysis of the Marketscan Database

Circulation ◽  
2020 ◽  
Vol 142 (Suppl_3) ◽  
Author(s):  
Dustin Nash ◽  
Hannah Katcoff ◽  
Jennifer Faerber ◽  
Ramesh Iyer ◽  
Michael L O’Byrne ◽  
...  
Keyword(s):  
Pediatric Population ◽  
Study Cohort ◽  
Administrative Claims ◽  
Group 14 ◽  
Loop Recorder ◽  
Device Infection ◽  
History Of ◽  
Secondary Analyses ◽  
The Impact ◽  
Device Miniaturization

Introduction: Implantable loop recorders (ILRs) are an effective technology in the detection of paroxysmal arrhythmias, but utility in the pediatric population has been limited by device size. In 2014, a miniaturized ILR was introduced with a less invasive implant technique. The impact of this technology on ILR utilization in pediatric patients has not been evaluated. Hypothesis: We hypothesize an increase in annual pediatric ILR implants since 2014 due to device miniaturization. Methods: A retrospective observational study was conducted using administrative claims from Marketscan Medicaid and Commercial insurance claims databases. Utilization of ILR between 1/2013 and 12/2018 was measured (normalized to the total enrolled population ≤18 years) and compared to two balancing measures (Holter ambulatory monitors and encounters with syncope as a diagnosis). Secondary analyses included evaluations of subsequent interventions and complications. Results: The study cohort included 33,532,185 individual subjects, of which 769 underwent ILR implantation. ILR subjects were 52% male, with a median age of 16 years (IQR 10-17 yrs). 71% had a history of syncope, 43% had a history of palpitations, and 28% had a history of congenital heart disease. Utilization of ILR increased in 2014, from 5 procedures per million enrollees in 2013 to 11 per million between 2015-2018, while balancing measures remained static (see Figure).Of 393 subjects with ≥1 year of follow-up post-implant, interventions included catheter ablation in 24 (6%), pacemaker implant in 15 (4%) and ICD implant in 7 (1.8%). Among this group, 14 (3.6%) had a device infection and 5 (1.3%) had an erosion. Conclusions: Following introduction of the miniaturized ILR, pediatric utilization has rapidly increased. The effect of this change on outcomes and value deserves further attention.

The impact of area on BAW resonator performance and an approach to device miniaturization

Ultrasonics ◽  
2019 ◽  
Vol 94 ◽  
pp. 92-101 ◽  
Author(s):  
Ngoc Nguyen ◽  
Agne Johannessen ◽  
Stig Rooth ◽  
Ulrik Hanke
Keyword(s):  
The Impact ◽  
Device Miniaturization
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