Electrical measurement of implantation damage profiles in InP

Author(s):  
W. Häussler ◽  
J.P. Biersack
Author(s):  
Stuart Friedman ◽  
Oskar Amster ◽  
Yongliang Yang ◽  
Fred Stanke

Abstract The use of Atomic Force Microscopy (AFM) electrical measurement modes is a critical tool for the study of semiconductor devices and process development. A relatively new electrical mode, scanning microwave impedance microscopy (sMIM), measures a material’s change in permittivity and conductivity at the scale of an AFM probe tip [1]. sMIM provides the real and imaginary impedance (Re(Z) and Im(Z)) of the probe-sample interface. By measuring the reflected microwave signal as a sample of interest is imaged with an AFM, we can in parallel capture the variations in permittivity and conductivity and, for doped semiconductors, variations in the depletion-layer geometry. An existing technique for characterizing doped semiconductors, scanning capacitance microscopy, modulates the tip-sample bias and detects the tip-sample capacitance with a lock-in amplifier. A previous study compares sMIM to SCM and highlights the additional capabilities of sMIM [2], including examples of nano-scale capacitance-voltage curves. In this paper we focus on the detailed mechanisms and capabilities of the nano-scale C-V curves and the ability to extract semiconductor properties from them. This study includes analytical and finite element modeling of tip bias dependent depletion-layer geometry and impedance. These are compared to experimental results on reference samples for both doped Si and GaN doped staircases to validate the systematic response of the sMIM-C (capacitive) channel to the doping concentration.


Author(s):  
C.H. Wang ◽  
S.P. Chang ◽  
C.F. Chang ◽  
J.Y. Chiou

Abstract Focused ion beam (FIB) is a popular tool for physical failure analysis (FA), especially for circuit repair. FIB is especially useful on advanced technology where the FIB is used to modify the circuit for new layout verification or electrical measurement. The samples are prepared till inter-metal dielectric (IMD), then a hole is dug or a metal is deposited or oxide is deposited by FIB. A common assumption is made that metal under oxide can not be seen by FIB. But a metal ion image is desired for further action. Dual beam, FIB and Scanning Electron Microscope (SEM), tools have a special advantage. When switching back and forth from SEM to FIB the observation has been made that the metal lines can be imaged. The details of this technique will be discussed below.


2008 ◽  
Vol 1091 ◽  
Author(s):  
Hung-Keng Chen ◽  
Po-Tsun Liu ◽  
Ting-Chang Chang ◽  
S.-L. Shy

AbstractVariable temperature electrical measurement is well-established and used for determining the conduction mechanism in semiconductors. There is a Meyer¡VNeldel relationship between the activation energy and the prefactor with a Meyer¡VNeldel energy of 30.03 meV, which corresponds well with the isokinetic temperature of about 350 K. Therefore, the multiple trapping and release model is properly used to explain the thermally activated phenomenon. By the method, an exponential distribution of traps is assumed to be a better representation of trap states in band tail. Samples with higher temperature during measurement are observed to show better mobility, higher on-current and lower resistance, which agree well with the multiple trapping and release model proposed to explain the conduction mechanism in pentacene-based OTFTs.


1992 ◽  
Vol 262 ◽  
Author(s):  
J.W. Honeycutt ◽  
J. Ravi ◽  
G. A. Rozgonyi

ABSTRACTThe effects of Ti and Co silicidation on P+ ion implantation damage in Si have been investigated. After silicidation of unannealed 40 keV, 2×1015 cm-2 P+ implanted junctions by rapid thermal annealing at 900°C for 10–300 seconds, secondary ion mass spectrometry depth profiles of phosphorus in suicided and non-silicided junctions were compared. While non-silicided and TiSi2 suicided junctions exhibited equal amounts of transient enhanced diffusion behavior, the junction depths under COSi2 were significantly shallower. End-of-range interstitial dislocation loops in the same suicided and non-silicided junctions were studied by planview transmission electron microscopy. The loops were found to be stable after 900°C, 5 minute annealing in non-silicided material, and their formation was only slightly effected by TiSi2 or COSi2 silicidation. However, enhanced dissolution of the loops was observed under both TiSi2 and COSi2, with essentially complete removal of the defects under COSi2 after 5 minutes at 900°C. The observed diffusion and defect behavior strongly suggest that implantation damage induced excess interstitial concentrations are significantly reduced by the formation and presence of COSi2, and to a lesser extent by TiSi2. The observed time-dependent defect removal under the suicide films suggests that vacancy injection and/or interstitial absorption by the suicide film continues long after the suicide chemical reaction is complete.


Crystals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 780
Author(s):  
Elke Beyreuther ◽  
Julius Ratzenberger ◽  
Matthias Roeper ◽  
Benjamin Kirbus ◽  
Michael Rüsing ◽  
...  

In the last two decades, variably doped strontium barium niobate (SBN) has attracted a lot of scientific interest mainly due to its specific non-linear optical response. Comparably, the parental compound, i.e., undoped SBN, appears to be less studied so far. Here, two different cuts of single-crystalline nominally pure strontium barium niobate in the composition Sr0.61Ba0.39Nb2O6 (SBN61) are comprehensively studied and analyzed with regard to their photoconductive responses. We present conductance measurements under systematically varied illumination conditions along either the polar z-axis or perpendicular to it (x-cut). Apart from a pronounced photoconductance (PC) already under daylight and a large effect upon super-bandgap illumination in general, we observe (i) distinct spectral features when sweeping the excitation wavelength over the sub-bandgap region as then discussed in the context of deep and shallow trap states, (ii) extremely slow long-term relaxation for both light-on and light-off transients in the range of hours and days, (iii) a critical dependence of the photoresponse on the pre-illumination history of the sample, and (iv) a current–voltage hysteresis depending on both the illumination and the electrical-measurement conditions in a complex manner.


2014 ◽  
Vol 191 ◽  
pp. 113-119 ◽  
Author(s):  
K. Jothi Ramalingam ◽  
N.R. Dhineshbabu ◽  
S.R. Srither ◽  
B. Saravanakumar ◽  
R. Yuvakkumar ◽  
...  

2006 ◽  
Vol 504 (1-2) ◽  
pp. 269-273
Author(s):  
H.Y. Chan ◽  
M.P. Srinivasan ◽  
F. Benistant ◽  
K.R. Mok ◽  
Lap Chan ◽  
...  

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