Semiconductor interface formation: The role of the induced density of interface states

1990 ◽  
Vol 41-42 ◽  
pp. 144-150 ◽  
Author(s):  
F. Flores ◽  
A. Muñoz ◽  
J.C. Durán
Keyword(s):  
Interface States ◽  
Interface Formation ◽  
Semiconductor Interface ◽  
Density Of Interface States

The role of the density of interface states in interfacial energy level alignment of PTCDA

2017 ◽  
Vol 49 ◽  
pp. 249-254 ◽  
Author(s):  
Mahdi Samadi Khoshkhoo ◽  
Heiko Peisert ◽  
Thomas Chassé ◽  
Marcus Scheele
Keyword(s):  
Energy Level ◽  
Interfacial Energy ◽  
Interface States ◽  
Energy Level Alignment ◽  
Density Of Interface States

Effects of surface reconstruction on III–V semiconductor interface formation: The role of III/V composition

1999 ◽  
Vol 74 (12) ◽  
pp. 1704-1706 ◽  
Author(s):  
B. Z. Nosho ◽  
W. H. Weinberg ◽  
W. Barvosa-Carter ◽  
B. R. Bennett ◽  
B. V. Shanabrook ◽  
...  
Keyword(s):  
Surface Reconstruction ◽  
Interface Formation ◽  
Semiconductor Interface

scholarly journals Charge transport mechanism in copper phthalocyanine thin films with and without traps

RSC Advances ◽  
2017 ◽  
Vol 7 (86) ◽  
pp. 54911-54919 ◽  
Author(s):  
Varsha Rani ◽  
Akanksha Sharma ◽  
Pramod Kumar ◽  
Budhi Singh ◽  
Subhasis Ghosh
Keyword(s):  
Thin Films ◽  
Charge Transport ◽  
Grain Boundaries ◽  
Transport Mechanism ◽  
Copper Phthalocyanine ◽  
Organic Thin Films ◽  
Interface States ◽  
Charge Transport Mechanism ◽  
Density Of Interface States

We investigate the charge transport mechanism in copper phthalocyanine thin films with and without traps. We find that the density of interface states at the grain boundaries can decide the mechanism of charge transport in organic thin films.

Reduction in the Density of Interface States at the SiO2/4H-SiC Interface after Dry Oxidation in the Presence of Potassium

2011 ◽  
Vol 679-680 ◽  
pp. 334-337 ◽  
Author(s):  
Pétur Gordon Hermannsson ◽  
Einar Ö. Sveinbjörnsson
Keyword(s):  
Energy Distribution ◽  
Oxidation Rate ◽  
Alkali Metals ◽  
Interface States ◽  
Significant Enhancement ◽  
Interface Traps ◽  
Strong Reduction ◽  
Dry Oxidation ◽  
Density Of Interface States

We report a strong reduction in the density of near-interface traps (NITs) at the SiO2/4H-SiC interface after dry oxidation in the presence of potassium. This is accompanied by a significant enhancement of the oxidation rate. The results are in line with recent investigations of the effect of sodium on oxidation of 4H-SiC. It is evident that both alkali metals enhance the oxidation rate of SiC and strongly influence the energy distribution of interface states.

Bias Annealing Effect on Hydrogen-Containing Au/N-Silicon Schottky Barrier

1993 ◽  
Vol 319 ◽  
Author(s):  
M.H. Yuan ◽  
Y.Q. Jia ◽  
G.G. Qin
Keyword(s):  
Schottky Barrier ◽  
Reverse Bias ◽  
Annealing Temperature ◽  
Interface States ◽  
Annealing Effect ◽  
Reversible Change ◽  
Semiconductor Interface ◽  
Zero Bias ◽  
Hydrogen Incorporation

AbstractAu/n-Si Schottky barrier (SB) incorporated by hydrogen has a 0.13 eV lower SB height (SBH) than that without hydrogen incorporation. For the hydrogen-containing SB, zero bias annealing (ZBA) decreases the SBH while reverse bias annealing (RBA) increases it. Besides, the ZBA and RBA cycling experiments reveal a reversible change of the SBH with in at least three cycles. The higher annealing temperature of RBA results in higher SBH. We interpret the above experimental facts as that hydrogen has an effect on metal-semiconductor interface states and then on the SBH, and both the bias on SB and temperature of annealing can influence the hydrogen effects on metal-semiconductor interface states.

Role of Ge surface segregation in Si/Ge interfacial ordering: Interface formation on a monohydride surface

1995 ◽  
Vol 51 (20) ◽  
pp. 14786-14789 ◽  
Author(s):  
Nobuyuki Ikarashi ◽  
Atsushi Oshiyama ◽  
Akira Sakai ◽  
Toru Tatsumi
Keyword(s):  
Surface Segregation ◽  
Interface Formation

scholarly journals Epitaxy in Lattice-Mismatched Systems. Role of Strain in Si/SiO2 Interface Formation.

Hyomen Kagaku ◽  
2000 ◽  
Vol 21 (6) ◽  
pp. 361-366 ◽  
Author(s):  
Hiroyuki KAGESHIMA ◽  
Kenji SHIRAISHI ◽  
Masashi UEMATSU
Keyword(s):  
Interface Formation
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