scholarly journals Role of oxygen vacancies in anodic TiO2 thin films

1993 ◽  
Vol 65-66 ◽  
pp. 246-251 ◽  
Author(s):  
Nacir Tit ◽  
J.W. Halley ◽  
Marek T. Michalewicz ◽  
H. Shore
Keyword(s):  
Thin Films ◽  
Oxygen Vacancies ◽  
Tio2 Thin Films

Role of oxygen vacancies on ferromagnetism in Fe-doped TiO2 thin films

2007 ◽  
Vol 102 (7) ◽  
pp. 073905 ◽  
Author(s):  
H. J. Meng ◽  
D. L. Hou ◽  
L. Y. Jia ◽  
X. J. Ye ◽  
H. J. Zhou ◽  
...  
Keyword(s):  
Thin Films ◽  
Oxygen Vacancies ◽  
Tio2 Thin Films ◽  
Doped Tio2

scholarly journals Biomaterial-Induced Stable Resistive Switching Mechanism in TiO2 Thin Films: The Role of Active Interstitial Sites/Ions in Minimum Current Leakage and Superior Bioactivity

ACS Omega ◽  
2020 ◽  
Vol 5 (30) ◽  
pp. 19050-19060
Author(s):  
Misbah Sehar Abbasi ◽  
Muhammad Sultan Irshad ◽  
Naila Arshad ◽  
Iftikhar Ahmed ◽  
Muhammad Idrees ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Tio2 Thin Films ◽  
Current Leakage ◽  
Switching Mechanism ◽  
Resistive Switching Mechanism

Critical role of {002} preferred orientation on electronic band structure of electrodeposited monoclinic WO3 thin films

2018 ◽  
Vol 2 (10) ◽  
pp. 2224-2236 ◽  
Author(s):  
Wai Ling Kwong ◽  
Pramod Koshy ◽  
Judy N. Hart ◽  
Wanqiang Xu ◽  
Charles C. Sorrell
Keyword(s):  
Thin Films ◽  
Band Structure ◽  
Oxygen Vacancies ◽  
Electronic Band Structure ◽  
Critical Role ◽  
Preferred Orientation ◽  
Electronic Band ◽  
Wo3 Thin Films

Decoupled effects of crystallographic {002} orientation and oxygen vacancies on the electronic band structure of monoclinic WO3 films.

Influence of oxygen vacancies on optical properties of anatase TiO2 thin films

2008 ◽  
Vol 128 (5-6) ◽  
pp. 911-913 ◽  
Author(s):  
Koji Iijima ◽  
Masako Goto ◽  
Shogo Enomoto ◽  
Hideyuki Kunugita ◽  
Kazuhiro Ema ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Oxygen Vacancies ◽  
Anatase Tio2 ◽  
Tio2 Thin Films

Role of Ru nano-dots embedded in TiO2 thin films for improving the resistive switching behavior

2010 ◽  
Vol 97 (23) ◽  
pp. 232904 ◽  
Author(s):  
Jung Ho Yoon ◽  
Kyung Min Kim ◽  
Min Hwan Lee ◽  
Seong Keun Kim ◽  
Gun Hwan Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Tio2 Thin Films

Multifractal study of TiO2 thin films deposited by MO-CVD method: The role of precursor amount and substrate temperature

Optik ◽  
2020 ◽  
Vol 222 ◽  
pp. 165384
Author(s):  
Bandar Astinchap ◽  
Hamta Ghanbaripour ◽  
Raziye Amuzgar
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Tio2 Thin Films ◽  
Cvd Method

Role of oxygen vacancies on the low-temperature dielectric relaxor behavior in epitaxial Ba0.85Ca0.15Ti0.9Zr0.1O3 thin films

2021 ◽  
Vol 5 (6) ◽  
Author(s):  
Subhashree Chatterjee ◽  
Abhisikta Barman ◽  
Shubhankar Barman ◽  
Tanmay Chabri ◽  
Sohini Kar-Narayan ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Oxygen Vacancies ◽  
Relaxor Behavior ◽  
Dielectric Relaxor

Role of multivalent Cu, oxygen vacancies and CuO nanophase in the ferromagnetic properties of ZnO:Cu thin films

RSC Advances ◽  
2015 ◽  
Vol 5 (69) ◽  
pp. 55648-55657 ◽  
Author(s):  
M. Younas ◽  
Junying Shen ◽  
Mingquan He ◽  
R. Lortz ◽  
Fahad Azad ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Room Temperature ◽  
Oxygen Vacancies ◽  
Room Temperature Ferromagnetism ◽  
Simultaneous Presence ◽  
Ferromagnetic Properties

Room temperature ferromagnetism (FM) of these thin film samples are highly tuneable by the simultaneous presence of CuO nanophases and multivalent Cu and Vö concentrations.

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