Role of oxygen vacancies on the low-temperature dielectric relaxor behavior in epitaxial Ba0.85Ca0.15Ti0.9Zr0.1O3 thin films

2021 ◽  
Vol 5 (6) ◽  
Author(s):  
Subhashree Chatterjee ◽  
Abhisikta Barman ◽  
Shubhankar Barman ◽  
Tanmay Chabri ◽  
Sohini Kar-Narayan ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Oxygen Vacancies ◽  
Relaxor Behavior ◽  
Dielectric Relaxor

Role of oxygen vacancies on ferromagnetism in Fe-doped TiO2 thin films

2007 ◽  
Vol 102 (7) ◽  
pp. 073905 ◽  
Author(s):  
H. J. Meng ◽  
D. L. Hou ◽  
L. Y. Jia ◽  
X. J. Ye ◽  
H. J. Zhou ◽  
...  
Keyword(s):  
Thin Films ◽  
Oxygen Vacancies ◽  
Tio2 Thin Films ◽  
Doped Tio2

Critical role of {002} preferred orientation on electronic band structure of electrodeposited monoclinic WO3 thin films

2018 ◽  
Vol 2 (10) ◽  
pp. 2224-2236 ◽  
Author(s):  
Wai Ling Kwong ◽  
Pramod Koshy ◽  
Judy N. Hart ◽  
Wanqiang Xu ◽  
Charles C. Sorrell
Keyword(s):  
Thin Films ◽  
Band Structure ◽  
Oxygen Vacancies ◽  
Electronic Band Structure ◽  
Critical Role ◽  
Preferred Orientation ◽  
Electronic Band ◽  
Wo3 Thin Films

Decoupled effects of crystallographic {002} orientation and oxygen vacancies on the electronic band structure of monoclinic WO3 films.

Role of Hydrogen Dilution in the Low-Temperature Growth of Nanocrystalline Si:H Thin Films from SiH4/H2Mixture

2009 ◽  
Vol 11 (3) ◽  
pp. 297-301 ◽  
Author(s):  
Chen Chengzhao ◽  
Qiu Shenghua ◽  
Liu Cuiqin ◽  
Wu Yandan ◽  
Li Ping ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Hydrogen Dilution

Relaxor Behavior in Ba0.8Sr0.2TiO3/ZrO2 Heterostructured Thin Films

2012 ◽  
Vol 1454 ◽  
pp. 89-96 ◽  
Author(s):  
Santosh K. Sahoo ◽  
H. Bakhru ◽  
Sumit Kumar ◽  
D. Misra ◽  
Y. N. Mohapatra ◽  
...  
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Oxygen Vacancies ◽  
Sol Gel ◽  
Single Layer ◽  
Relaxor Behavior ◽  
Bst Thin Films ◽  
Si Substrates ◽  
Sol Gel Process ◽  
Loss Maximum

ABSTRACTBa0.8Sr0.2TiO3 (BST) thin films and Ba0.8Sr0.2TiO3/ZrO2 heterostructured thin films have been successfully fabricated on Pt/Ti/SiO2/Si substrates by a sol-gel process. The dielectric properties of these films were measured as a function of temperature in the frequency range of 1 kHz to 1 MHz. It is clearly observed that the dielectric peaks exist and shift to high temperature with the increase of frequency indicating the presence of relaxor-type behavior in the films. Also it is seen that one dielectric peak is observed in single layer BST thin films whereas two dielectric peaks are observed in BST/ZrO2 heterostructured thin films due to the presence of two dielectric layers having different band gap energies. The variation of peak temperature Tm, corresponding to dielectric loss maximum, with frequency and fitting to Arrhenius law gives activation energy of 1.24 eV which is very close to the activation energy of oxygen vacancies in BaTiO3. Hence, oxygen vacancies are the active defects which are contributing to the relaxation process in these films.

scholarly journals Role of oxygen vacancies in anodic TiO2 thin films

1993 ◽  
Vol 65-66 ◽  
pp. 246-251 ◽  
Author(s):  
Nacir Tit ◽  
J.W. Halley ◽  
Marek T. Michalewicz ◽  
H. Shore
Keyword(s):  
Thin Films ◽  
Oxygen Vacancies ◽  
Tio2 Thin Films

Role of multivalent Cu, oxygen vacancies and CuO nanophase in the ferromagnetic properties of ZnO:Cu thin films

RSC Advances ◽  
2015 ◽  
Vol 5 (69) ◽  
pp. 55648-55657 ◽  
Author(s):  
M. Younas ◽  
Junying Shen ◽  
Mingquan He ◽  
R. Lortz ◽  
Fahad Azad ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Room Temperature ◽  
Oxygen Vacancies ◽  
Room Temperature Ferromagnetism ◽  
Simultaneous Presence ◽  
Ferromagnetic Properties

Room temperature ferromagnetism (FM) of these thin film samples are highly tuneable by the simultaneous presence of CuO nanophases and multivalent Cu and Vö concentrations.

Sign in / Sign up

Export Citation Format

Share Document