Inverse problem: the concentration depth profile of elements from ARXPS data

ABSTRACTThis paper reports the variation of carrier concentration depth profile in Si-implanted channel conductive layers of liquid- encapsulated-Czochralski- technique (LEC) grown GaAs crystals, the Vth scattering amplitude variation and the averaged Vth variation before and after phospho-silicate-glass (PSG) cap annealing of high-dose-Si-ion implanted crystal layers. Furthermore, the PSG-cap-annealing Vth variation difference between the As-rich LEC crystal and the near-stoichiometric LEC crystal is presented. These results, and carrier depth profile of Si-implanted active layers in LEC GaAs crystals through model of implanted Si atom move (like diffusion) and Si atom capture of a crystal lattice and siteing on lattice are discussed.

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Depth Profile Analysis of Deep Level Defects in 4H-SiC Introduced by Radiation

Crystals ◽

10.3390/cryst10090845 ◽

2020 ◽

Vol 10 (9) ◽

pp. 845

Author(s):

Tomislav Brodar ◽

Luka Bakrač ◽

Ivana Capan ◽

Takeshi Ohshima ◽

Luka Snoj ◽

...

Keyword(s):

Neutron Irradiation ◽

Depth Profile ◽

Deep Level ◽

Profile Analysis ◽

Heavy Ion ◽

Deep Levels ◽

Carbon Ions ◽

Concentration Depth Profile ◽

Heavy Carbon ◽

Light Medium

Deep level defects created by implantation of light-helium and medium heavy carbon ions in the single ion regime and neutron irradiation in n-type 4H-SiC are characterized by the DLTS technique. Two deep levels with energies 0.4 eV (EH1) and 0.7 eV (EH3) below the conduction band minimum are created in either ion implanted and neutron irradiated material beside carbon vacancies (Z1/2). In our study, we analyze components of EH1 and EH3 deep levels based on their concentration depth profiles, in addition to (−3/=) and (=/−) transition levels of silicon vacancy. A higher EH3 deep level concentration compared to the EH1 deep level concentration and a slight shift of the EH3 concentration depth profile to larger depths indicate that an additional deep level contributes to the DLTS signal of the EH3 deep level, most probably the defect complex involving interstitials. We report on the introduction of metastable M-center by light/medium heavy ion implantation and neutron irradiation, previously reported in cases of proton and electron irradiation. Contribution of M-center to the EH1 concentration profile is presented.

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Applied-Information Technology in Concentration Depth Profile of Multi-Charged Mo Ion Implantation

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.662.115 ◽

2014 ◽

Vol 662 ◽

pp. 115-118

Author(s):

Jian Hua Yang ◽

Xing Jian Ma

Keyword(s):

Monte Carlo ◽

Ion Implantation ◽

Depth Profile ◽

High Dose ◽

H13 Steel ◽

Depth Profiles ◽

Concentration Depth Profile ◽

Charged Ions ◽

Concentration Depth Profiles ◽

Better Than

Monte Carlo computer simulations based on the binary collision approximation, TRIDYN program, have been applied to calculate the concentration depth profiles of implanted multi-charged molybdenum ions in H13 steel. The sputtering effect of a high dose ion implantation and influence of multi-charged ions on the concentration depth profile of implanted molybdenum ions can both be considered in the TRIDYN simulation. For the Monte Carlo computer simulation, the chosen pseudo-projectiles are 500000. The chosen extraction voltages are 48kV and 25kV, respectively, and an implantation doses of 5×1017cm-2 to compare the results which have been published related to molybdenum ion implantation. TRIDYN program is better than SRIM program in the calculation of the concentration depth profiles of implanted multi-charged ions. And the calculation result of the TRIDYN program is different from the experiment result. The other factors of affecting the concentration depth profile have also been discussed finally.

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CHARACTERIZATION OF SURFACE COMPOSITION AND MICROSTRUCTURE OF H13 STEEL IMPLANTED BY Ti IONS USING MASKING IMPLANTATION PROCEDURE

Surface Review and Letters ◽

10.1142/s0218625x08011627 ◽

2008 ◽

Vol 15 (04) ◽

pp. 481-485

Author(s):

J. H. YANG ◽

S. LI ◽

M. F. CHENG ◽

X. D. LUO

Keyword(s):

Depth Profile ◽

Surface Composition ◽

Grazing Angle ◽

Metal Vapor ◽

Ion Source ◽

Vacuum Arc ◽

H13 Steel ◽

Transmission Electron ◽

Concentration Depth Profile ◽

Pin On Disc

Ti and C ions extracted from a metal vapor vacuum arc ion source (MEVVA) were implanted into H13 steel using a masking procedure to ensure reproducible conditions for testing and subsequent analysis. An optical interference microscope and pin-on-disc apparatus investigated the wear and friction characteristics of the steel. The Ti concentration depth profile from Rutherford backscattering spectroscopy was compared with that calculated by a TRIDYN code. It was observed by grazing-angle X-ray diffraction and transmission electron microscopy that carbide of Ti appeared in the doped region. The concentration depth profile and microstructure analysis can serve to illuminate the wear resistance improvement mechanisms of the Ti -implanted steel.

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