A luminescence study of the interface quality of GaInAs/InP single quantum wells grown by metalorganic vapour phase epitaxy
1991 ◽
Vol 9
(1)
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pp. 99-102
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1994 ◽
Vol 52
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pp. 736-737
2003 ◽
Vol 20
(8)
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pp. 1350-1352
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1997 ◽
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pp. 550-554
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1995 ◽
Vol 34
(Part 2, No. 10B)
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pp. L1336-L1339
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2001 ◽
Vol 19
(1)
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pp. 131-133
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1993 ◽
Vol 130
(3-4)
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pp. 490-494
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Keyword(s):
2009 ◽
Vol 615-617
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pp. 939-942
2014 ◽
Vol 65
(5)
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pp. 299-303
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