scholarly journals Structural Characterization of Doped Thick Gainnas Layers - Ambiguities and Challenges

2014 ◽  
Vol 65 (5) ◽  
pp. 299-303 ◽  
Author(s):  
Damian Pucicki ◽  
Katarzyna Bielak ◽  
Beata Ściana ◽  
Wojciech Dawidowski ◽  
Karolina Żelazna ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Structural Characterization ◽  
Atmospheric Pressure ◽  
Vapour Phase ◽  
Light Sources ◽  
Vapour Phase Epitaxy ◽  
Long Wavelength ◽  
Metalorganic Vapour Phase Epitaxy ◽  
Thick Layers

Abstract GaInNAs alloys are mostly used as an active part of light sources for long wavelength telecom applications. Beside this, these materials are used as thin quantum wells (QWs), and a need is to grow thick layers of such semiconductor alloys for photodetectors and photovoltaic cells applications. However, structural characterization of the GaInNAs layers is hindered by non-homogeneity of the In and N distributions along the layer. In this work the challenges of the structural characterization of doped thick GaInNAs layers grown by atmospheric pressure metalorganic vapour phase epitaxy (APMOVPE) will be presented

Characterization of GaAs/AlGaAs quantum wells and quantum wires by chemical lattice imaging

1994 ◽  
Vol 52 ◽  
pp. 736-737
Author(s):  
A. Carlsson ◽  
J.-O. Malm ◽  
A. Gustafsson
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Quantum Wires ◽  
Vapour Phase ◽  
Quantitative Information ◽  
Lattice Imaging ◽  
Vapour Phase Epitaxy ◽  
Metalorganic Vapour Phase Epitaxy ◽  
High Resolution Images

In this study a quantum well/quantum wire (QW/QWR) structure grown on a grating of V-grooves has been characterized by a technique related to chemical lattice imaging. This technique makes it possible to extract quantitative information from high resolution images.The QW/QWR structure was grown on a GaAs substrate patterned with a grating of V-grooves. The growth rate was approximately three monolayers per second without growth interruption at the interfaces. On this substrate a barrier of nominally Al0.35 Ga0.65 As was deposited to a thickness of approximately 300 nm using metalorganic vapour phase epitaxy . On top of the Al0.35Ga0.65As barrier a 3.5 nm GaAs quantum well was deposited and to conclude the structure an additional approximate 300 nm Al0.35Ga0.65 As was deposited. The GaAs QW deposited in this manner turns out to be significantly thicker at the bottom of the grooves giving a QWR running along the grooves. During the growth of the barriers an approximately 30 nm wide Ga-rich region is formed at the bottom of the grooves giving a Ga-rich stripe extending from the bottom of each groove to the surface.

Structural characterization of InN quantum dots grown by Metalorganic Vapour Phase Epitaxy

2006 ◽  
Vol 3 (6) ◽  
pp. 1687-1690 ◽  
Author(s):  
J. G. Lozano ◽  
D. González ◽  
A. M. Sánchez ◽  
D. Araújo ◽  
S. Ruffenach ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Structural Characterization ◽  
Vapour Phase ◽  
Vapour Phase Epitaxy ◽  
Metalorganic Vapour Phase Epitaxy

Structural Characterization of GaN Epitaxial Layers Grown on 4H-SiC Substrates with Different Off-Cut

2009 ◽  
Vol 615-617 ◽  
pp. 939-942
Author(s):  
Piotr Caban ◽  
Kinga Kościewicz ◽  
Wlodek Strupiński ◽  
Jan Szmidt ◽  
Karolina Pagowska ◽  
...  
Keyword(s):  
Structural Properties ◽  
Structural Characterization ◽  
Surface Preparation ◽  
Vapour Phase ◽  
Crystal Quality ◽  
Crystallographic Structure ◽  
Vapour Phase Epitaxy ◽  
Metalorganic Vapour Phase Epitaxy

The influence of surface preparation of 4H-SiC substrates on structural properties of GaN grown by low pressure metalorganic vapour phase epitaxy was studied. Substrate etching has an impact on the crystallographic structure of epilayers and improves its crystal quality. The GaN layers were characterized by RBS/channelling and HRXRD measurements. It was observed that on-axis 4H-SiC is most suitable for GaN epitaxy and that substrate etching improves the crystal quality of epilayer.

scholarly journals Толстые слои alpha-Ga-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=- на сапфировых подложках, полученные методом хлоридной эпитаксии

2019 ◽  
Vol 53 (6) ◽  
pp. 789
Author(s):  
А.И. Печников ◽  
С.И. Степанов ◽  
А.В. Чикиряка ◽  
М.П. Щеглов ◽  
М.А. Одноблюдов ◽  
...  
Keyword(s):  
Single Phase ◽  
Film Growth ◽  
Vapour Phase ◽  
Wide Bandgap ◽  
Structural And Optical Properties ◽  
Vapour Phase Epitaxy ◽  
Record Value ◽  
Epitaxial Film Growth ◽  
Thick Layers

This paper reports on epitaxial film growth and characterization of α-Ga2O3, a novel wide bandgap semiconducting material. The films were deposited by halide vapour phase epitaxy on basal plane sapphire substrates. The films were from 0.5 μm to over 10 μm in thickness, the latter being the record value by now. Structural and optical properties of the specimens were studied. All specimens were structurally uniform, single phase, and had a corundum-like r3c structure similar to that of sapphire substrate. It was found that the full width at half maximum for the (0006) α-Ga2O3 reflection varies with layer thickness and approaches 240 arcsec for the thickest layer. Both thin and thick layers were transparent in the visible and UV spectral range up to the absorption edge at 5.2 eV.

Strain Induced Compositional Modulations in AlGaAs Overlayers Induced by Lateral Surface Gratings

2000 ◽  
Vol 618 ◽  
Author(s):  
U. Pietsch ◽  
U. Zeimer ◽  
L. Hofmann ◽  
J. Grenzer ◽  
S. Gramlich
Keyword(s):  
Quantum Wells ◽  
Grazing Incidence ◽  
Vapour Phase ◽  
High Index ◽  
Lateral Strain ◽  
Vapour Phase Epitaxy ◽  
Al Content ◽  
Compositional Modulation ◽  
Surface Grating ◽  
Metalorganic Vapour Phase Epitaxy

ABSTRACTStrain and compositional modulation in AlxGa1−xAs layers grown by metalorganic vapour phase epitaxy (MOVPE) over a sinusoidally shaped GaAs (001) surface grating were studied by scanning electron microscopy (SEM), X-ray grazing-incidence diffraction (GID) and photoluminescence (PL). Two growth temperatures and two compositions were chosen to realize planar overlayers. By SEM a periodic reduction in Al-content was found at the valley positions of the GaAs grating. The appearance of such vertical quantum wells (VQWs) has been explained by the growth rate anisotropy between high-index and (001) planes and a curvature-induced capillarity flow of Ga. Estimated from PL energies a larger reduction of the Al-concentration in the VQW and also at the high-index sidewall facets was found than compared to predictions from the capillarity flow theory. Using depth-resolved GID we show that the formation of VQWs is accompanied by a periodic lateral strain field. Therefore we assume, that the formation of the VQWs is influenced by strain induced diffusion due to the interaction of opposite sidewall facets.

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