The use of X-ray diffraction rocking curve methodology for assessment of the c-axis orientation in BiSrCaCuO superconducting thin films

ABSTRACTWe prepared colossal magnetoresistive La0.8Sr0.2MnO3 thin films on the MgO, SrTiO3 and LaAlO3 single crystal substrates using KrF excimer pulsed laser ablation technique. The structural and electrical properties of the La0.8Sr0.2MnO3 thin films which were strained by the lattice mismatch are reported. The in-plane lattice mismatch between the La0.8Sr0.2MnO3 and MgO, SrTiO3 and LaAlO3 substrates are -7.8 %, -0.5 % and +2.3 %, respectively. The X-ray diffraction spectra of the films exhibited c-axis orientation. In the case of the La0.8Sr0.2MnO3 / LaAlO3 thin films with thickness over 100 nm, the divided (00l) peaks were observed. The surface morphology and transport property of the strongly stressed La0.8Sr0.2MnO3 / LaAlO3 were different from those of La0.8Sr0.2MnO3 / MgO and La0.8Sr0.2MnO3 / SrTiO3thin films.

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X-ray Line Broadening Analysis of Tl-Superconducting Films

Advances in X-ray Analysis ◽

10.1154/s0376030800019534 ◽

1989 ◽

Vol 33 ◽

pp. 145-151

Author(s):

M. O. Eatough ◽

D. S. Ginley ◽

B. Morosin

Keyword(s):

Thin Films ◽

Superconducting Films ◽

Electron Beam Evaporation ◽

Superconducting Thin Films ◽

Line Broadening ◽

X Ray Diffraction ◽

X Ray ◽

Current Densities ◽

Diffraction Peaks ◽

Sequential Electron

AbstractSuperconducting thin films (0.3-0.7μm) in the TI-Ca-Ba-Cu-0 system have been prepared on various single crystal substrates by sequential electron beam evaporation followed by appropriate sintering and annealing. Oxygen-annealed films show Tc as high as 110K and critical current densities to 600,000 A/cm2. X-ray diffraction analyses of these films show predominantly the Tl2Ca2Ba2Cu2O10 phase (c-parameter near 36Å), but some also contain up to 50 at% of the Tl2CaBa2Cu2O8 phase (c-parameter near 30Å). The complete absence of hkl reflections other than 00I demonstrates the highly oriented nature of the films as well as the absence of other Tl phases. The diffraction peaks are noticeably broader for the 36Å phase than for the 30Å phase. For a 0.7μm film such broadening is consistent with coherent sizes along the c-axis of 1200 - 1400Å and 500Å, respectively, for the 30Å and 36Å phases, and of strain values near 1.4-1.8 x 10-3 for both phases.

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CRYSTALLINE SrTiO3 THIN FILMS ON SILICON BY PULSED LASER DEPOSITION

International Journal of Modern Physics B ◽

10.1142/s0217979205028980 ◽

2005 ◽

Vol 19 (01n03) ◽

pp. 533-535

Author(s):

J. H. HAO ◽

J. GAO

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

Perovskite Oxide ◽

Deposition Technique ◽

X Ray Diffraction ◽

Rocking Curve ◽

X Ray ◽

Silicon Materials

We have developed a process to grow SrTiO 3 ( STO ) thin films showing single (110) orientation directly on Si by means of pulsed laser deposition technique. The growth of STO films directly on Si has been described. The crystallinity of the grown STO films was characterized by X-ray diffraction analysis of θ-2θ scan and rocking curve. Our results may be of interest for better understanding of the growth based on the perovskite oxide thin films on silicon materials.

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Highly C-Axis Oriented Barium Titanate Ferroelectric Films Deposited on SrTiO3 Substrate Using an Off-Axis Sputtered Conductive Oxide Layer as Bottom Electrode

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.399-401.926 ◽

2011 ◽

Vol 399-401 ◽

pp. 926-929

Author(s):

Wei Zhang ◽

Mei Ling Yuan ◽

Xian Yang Wang ◽

Jun Ouyang

Keyword(s):

Thin Films ◽

Bottom Electrode ◽

Rf Magnetron Sputtering ◽

X Ray Diffraction ◽

Ferroelectric Films ◽

Axis Orientation ◽

X Ray ◽

Pure Argon ◽

Single Target ◽

Conductive Oxide

BaTiO3(BTO) thin films were grown on (100) SrTiO3(STO) single crystal substrates using the RF-magnetron sputtering technique (RFMS) in both pure argon and mixed Ar/O2(20% O2) atmosphere. A La0.5Sr0.5CoO3(LSCO) layer was deposited as the bottom electrode by a 90° off-axis single-target RFMS. θ-2θ X-ray diffraction measurements showed that BTO thin films grown in both cases had a highly preferred c-axis orientation (001). From hysteresis measurements, it was confirmed that both films are ferroelectric. The ferroelectric polarizations 2Pr were 6.6 μC/cm2and 27.1 μC/cm2, for the BTO films grown in pure argon and in mixed Ar/O2atmosphere, respectively.

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HIGH-QUALITY Tl2Ba2Ca2Cu3O10 THIN FILMS FABRICATED VIA LASER ABLATION

Modern Physics Letters B ◽

10.1142/s0217984993000047 ◽

1993 ◽

Vol 07 (01) ◽

pp. 19-23 ◽

Cited By ~ 1

Author(s):

W. A. LUO ◽

Y. Q. TANG ◽

Y. Z. CHEN ◽

I. N. CHAN ◽

K. Y. CHEN ◽

...

Keyword(s):

Thin Films ◽

Laser Ablation ◽

Critical Current Density ◽

Current Density ◽

Superconducting Thin Films ◽

X Ray Diffraction ◽

High Quality ◽

Step Process ◽

X Ray ◽

Zero Resistance

In this letter, we describe results obtained via laser ablation to fabricate Tl 2 Ba 2 Ca 2 Cu 3- O 10 superconducting thin films using a two-step process. We found that the zero-resistance temperatures are up to 121 K, while the onset temperatures are up to 125 K. The T c and J c are mainly determined by a non-contact new technique for high-T c films. The typical critical current density, J c , is about 106 A/cm 2 at 77 K. X-ray diffraction showed that the superconducting thin films are nearly single 2223 phase and are highly oriented.

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Internal Stress of ZnO thin Films Caused by Thickness Distribution and Crystallinity

MRS Proceedings ◽

10.1557/proc-518-215 ◽

1998 ◽

Vol 518 ◽

Cited By ~ 2

Author(s):

M. Takeuchi ◽

K. Inoue ◽

Y. Yoshino ◽

K. Ohwada

Keyword(s):

Thin Films ◽

Stress Distribution ◽

Thickness Distribution ◽

Zno Thin Films ◽

Optimum Thickness ◽

X Ray Diffraction ◽

Axis Orientation ◽

X Ray ◽

Argon Ions ◽

Cosine Law

AbstractThe improvement of thickness distribution and crystallinity in ZnO thin films prepared by radio frequency (rf) planer magnetron sputtering has been studied. Optimum thickness distribution of less than ± 2.2% in a 3-inch wafer is obtained by changing the substrate angle to the ZnO target and is in accordance with cosine law. The c-axis orientation perpendicular to the silicon substrate is confirmed by x-ray diffraction. The stress of ZnO thin films is larger than 0.3GPa and its distribution is independent of the substrate angle that is set at a slant to the optimum angle for thickness distribution. These results indicate that thickness distribution of ZnO thin films heavily depends on the substrate angle, while the stress and its distribution are independent of the setting angle of the substrate. Stress distribution is attributed to the distribution of argon ions and sputtered molecules impinging a wafer.

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ZnO Films Deposited on Various Diamond Film Substrates with Different Surface Roughness

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.287-290.2347 ◽

2011 ◽

Vol 287-290 ◽

pp. 2347-2350

Author(s):

Rong Fan ◽

Lin Jun Wang ◽

Jian Huang ◽

Ke Tang ◽

Ji Jun Zhang ◽

...

Keyword(s):

Thin Films ◽

Surface Roughness ◽

Diamond Film ◽

Zno Thin Films ◽

Zno Films ◽

X Ray Diffraction ◽

Free Standing ◽

Axis Orientation ◽

X Ray ◽

Force Microscopy

ZnO thin films were deposited by radio frequency (R. F.) magnetron sputtering on various diamond film substrates with different surface roughness. The influence of surface roughness on structural properties and surface morphology of ZnO thin films was investigated by X-ray diffraction (XRD) and atom force microscopy (AFM), respectively. Only on the nanocrystalline and free-standing diamond substrates, ZnO films with preferential c-axis orientation and smooth surface were obtained.

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Reduced YSZ deposition temperatures for YBa2Cu3Ox/YSZ thin films on sapphire

Journal of Materials Research ◽

10.1557/jmr.1995.1086 ◽

1995 ◽

Vol 10 (5) ◽

pp. 1086-1090 ◽

Cited By ~ 4

Author(s):

J.H. Kroese ◽

A.J. Drehrman ◽

J.A. Horrigan

Keyword(s):

Thin Films ◽

Partial Pressure ◽

Film Surface ◽

Buffer Layers ◽

Negative Ion ◽

Partial Pressure Of Oxygen ◽

X Ray Diffraction ◽

Axis Orientation ◽

Ybco Films ◽

X Ray

Thin films of Y-stabilized ZrO2 (YSZ) were deposited by RF diode sputtering on R-plane sapphire as a buffer layer for the deposition of YBa2Cu3O3 (YBCO). By increasing the partial pressure of oxygen in the sputter gas mixture from 20% to 50%, it was found that the substrate temperature required to obtain (100) oriented YSZ deposition could be lowered to 630 °C from 800 °C. This change is attributed to heating or mixing effects at the film surface, due to an increase in negative ion bombardment, which supplements the effects of external heating. Increases in the partial pressure of oxygen beyond 50% were found to be counterproductive. YBCO films, deposited on the YSZ buffer layers via magnetron sputtering, showed c-axis orientation and transition temperatures of 82 K. Orientation of both the YSZ and YBCO films was confirmed by x-ray diffraction and SEM characterization.

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SYNTHESIS AND CHARACTERIZATION OF HG-BASED SUPERCONDUCTING THIN FILMS PRODUCED STARTING FROM LASER-DEPOSITED PRECURSORS

International Journal of Modern Physics B ◽

10.1142/s021797920000248x ◽

2000 ◽

Vol 14 (25n27) ◽

pp. 2731-2736 ◽

Cited By ~ 1

Author(s):

M. BINDI ◽

F. FUSO ◽

N. PUCCINI ◽

E. ARIMONDO ◽

A. TAMPIERI ◽

...

Keyword(s):

Thin Films ◽

Laser Deposition ◽

Precursor Film ◽

Superconducting Thin Films ◽

X Ray Diffraction ◽

X Ray ◽

Electron Microscopy Analysis ◽

Zero Resistance ◽

Microscopy Analysis

Correctly c-axis oriented HgBa 2 CaCu 2 O 6+δ thin films have been produced on (100) MgO single crystal substrates and characterized. Pulsed laser deposition has been exploited to deposit Hg-free Re-doped precursor which then underwent synthesis in evacuated and sealed quartz tubes. X-ray diffraction pattern of the precursor target shows the expected composition of oxides. Scanning electron microscopy analysis have been performed on the surface of the precursor film. Hg-1212 films have been analyzed by θ-2θ Bragg-Brentano X-ray diffractometry. The patterns show little contributions in composition of Hg-1223 phase. The films exhibit a transition temperature >120 K with zero-resistance at around 115 K.

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