Reduced YSZ deposition temperatures for YBa2Cu3Ox/YSZ thin films on sapphire

1995 ◽  
Vol 10 (5) ◽  
pp. 1086-1090 ◽  
Author(s):  
J.H. Kroese ◽  
A.J. Drehrman ◽  
J.A. Horrigan
Keyword(s):  
Thin Films ◽  
Partial Pressure ◽  
Film Surface ◽  
Buffer Layers ◽  
Negative Ion ◽  
Partial Pressure Of Oxygen ◽  
X Ray Diffraction ◽  
Axis Orientation ◽  
Ybco Films ◽  
X Ray

Thin films of Y-stabilized ZrO2 (YSZ) were deposited by RF diode sputtering on R-plane sapphire as a buffer layer for the deposition of YBa2Cu3O3 (YBCO). By increasing the partial pressure of oxygen in the sputter gas mixture from 20% to 50%, it was found that the substrate temperature required to obtain (100) oriented YSZ deposition could be lowered to 630 °C from 800 °C. This change is attributed to heating or mixing effects at the film surface, due to an increase in negative ion bombardment, which supplements the effects of external heating. Increases in the partial pressure of oxygen beyond 50% were found to be counterproductive. YBCO films, deposited on the YSZ buffer layers via magnetron sputtering, showed c-axis orientation and transition temperatures of 82 K. Orientation of both the YSZ and YBCO films was confirmed by x-ray diffraction and SEM characterization.

Structural and Electrical Properties of Colossal Magnetoresistive LSMO Thin Films Prepared by KrF Laser Ablation Method

2001 ◽  
Vol 666 ◽  
Author(s):  
Fumiaki Mitsugi ◽  
Tomoaki Ikegami ◽  
Kenji Ebihara ◽  
Jagdish Narayan ◽  
Alexander M. Grishin
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Electrical Properties ◽  
Lattice Mismatch ◽  
X Ray Diffraction ◽  
Axis Orientation ◽  
X Ray ◽  
Colossal Magnetoresistive ◽  
Laser Ablation Method ◽  
Structural And Electrical Properties

ABSTRACTWe prepared colossal magnetoresistive La0.8Sr0.2MnO3 thin films on the MgO, SrTiO3 and LaAlO3 single crystal substrates using KrF excimer pulsed laser ablation technique. The structural and electrical properties of the La0.8Sr0.2MnO3 thin films which were strained by the lattice mismatch are reported. The in-plane lattice mismatch between the La0.8Sr0.2MnO3 and MgO, SrTiO3 and LaAlO3 substrates are -7.8 %, -0.5 % and +2.3 %, respectively. The X-ray diffraction spectra of the films exhibited c-axis orientation. In the case of the La0.8Sr0.2MnO3 / LaAlO3 thin films with thickness over 100 nm, the divided (00l) peaks were observed. The surface morphology and transport property of the strongly stressed La0.8Sr0.2MnO3 / LaAlO3 were different from those of La0.8Sr0.2MnO3 / MgO and La0.8Sr0.2MnO3 / SrTiO3thin films.

The Use of BaF2 Buffer Layers for the Sputter-Deposition of Ticabacuo Thin-Film Superconductors

1989 ◽  
Vol 169 ◽  
Author(s):  
K.M. Hubbard ◽  
P.N. Arendt ◽  
D.R. Brown ◽  
D.W. Cooke ◽  
N.E. Elliott ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Sputter Deposition ◽  
Buffer Layers ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
X Ray ◽  
Film Substrate ◽  
Ion Backscattering ◽  
Scanning Electron

AbstractThin films of the Tl‐based superconductors often have relatively poor properties because of film/substrate interdiffusion which occurs during the anneal. We have therefore investigated the use of BaF2 as a diffusion barrier. TICaBaCuO thin films were deposited by dc magnetron sputtering onto MgO <100> substrates, both with and without an evaporation‐deposited BaF2 buffer layer, and post‐annealed in a Tl over‐pressure. Electrical properties of the films were determined by four‐point probe analysis, and compositions were measured by ion‐backscattering spectroscopy. Structural analysis was performed by X‐ray diffraction and scanning electron microscopy. The BaF2 buffer layers were found to significantly improve the properties of the TICaBaCuO thin films.

Reel-to-Reel Processing of Buffer Layers and YBCO on Textured Substrate

2012 ◽  
Vol 569 ◽  
pp. 62-69
Author(s):  
Hui Zhou Liu ◽  
Jian Yang ◽  
Hua Zhang
Keyword(s):  
Buffer Layers ◽  
Superconducting Tapes ◽  
X Ray Diffraction ◽  
High Tc ◽  
Ybco Films ◽  
X Ray ◽  
Ybco Tapes ◽  
Processing Techniques ◽  
Continuous Deposition ◽  
Niw Substrate

High Tc superconducting tapes based on YBCO Coated Conductor have been extensively studied to develop the processing techniques for application. In this paper, two self-designed reel-to-reel deposition systems (Sputtering and PLD) were installed. Continuous deposition of multi-layer CeO2/YSZ/Y2O3 buffer layers were carried out on biaxially textured NiW substrate using reactive sputtering. YBCO films were coated on the CeO2/YSZ/Y2O3 buffered NiW substrate by continuous PLD subsequently. To achieve high current carrying capacities, combinations of various deposition conditions were explored. X-ray diffraction measurements show good in-plane and out-plane texture in buffer layers and YBCO films. The transition temperature of the YBCO was 89 K and the critical current is over 50 A at 77 K in 1 meter long YBCO tapes.

MICROSTRUCTURES OF SPUTTERED ORIENTED Si/CeO2 BILAYERs YBa2Cu3O7-δ/Si INTEGRATED MICROELECTRONICS

2003 ◽  
Vol 17 (04n06) ◽  
pp. 848-854 ◽  
Author(s):  
A. CHIODONI ◽  
E. MEZZETTI ◽  
D. BOTTA ◽  
L. GOZZELINO ◽  
B. MINETTI ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Cerium Dioxide ◽  
Buffer Layers ◽  
X Ray Diffraction ◽  
Sputtering Deposition ◽  
X Ray ◽  
Integrated Electronics ◽  
Lattice Matching ◽  
Deposition Techniques

In the framework of a research aimed to superconductor/semiconductor integrated electronics, we have grown a-axis oriented YBa 2 Cu 3 O 7-δ (YBCO) thin films on silicon (100) substrates with (111) oriented insulating buffer layers of cerium dioxide ( CeO 2), using magnetron sputtering deposition techniques. The properties of the cerium dioxide layer have been preliminary optimized by means of several layout and by monitoring the growing procedures through X-ray diffraction, AFM and TEM techniques. The lattice matching between CeO 2 and YBCO resulted to be worsened by an amorphous thin SiO 2 layer at the Si/CeO 2 interface, that decouples the buffer orientation from the seed orientation. However, it was possible to grow a relatively thick, optimally textured layer of CeO 2 without spurious orientations. The YBCO films deposited on top of this layer result preferentially a-axis oriented. The transition widths are very large, jet well controllable and reproducible. Some technological applications can be already envisaged.

Highly C-Axis Oriented Barium Titanate Ferroelectric Films Deposited on SrTiO3 Substrate Using an Off-Axis Sputtered Conductive Oxide Layer as Bottom Electrode

2011 ◽  
Vol 399-401 ◽  
pp. 926-929
Author(s):  
Wei Zhang ◽  
Mei Ling Yuan ◽  
Xian Yang Wang ◽  
Jun Ouyang
Keyword(s):  
Thin Films ◽  
Bottom Electrode ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Ferroelectric Films ◽  
Axis Orientation ◽  
X Ray ◽  
Pure Argon ◽  
Single Target ◽  
Conductive Oxide

BaTiO3(BTO) thin films were grown on (100) SrTiO3(STO) single crystal substrates using the RF-magnetron sputtering technique (RFMS) in both pure argon and mixed Ar/O2(20% O2) atmosphere. A La0.5Sr0.5CoO3(LSCO) layer was deposited as the bottom electrode by a 90° off-axis single-target RFMS. θ-2θ X-ray diffraction measurements showed that BTO thin films grown in both cases had a highly preferred c-axis orientation (001). From hysteresis measurements, it was confirmed that both films are ferroelectric. The ferroelectric polarizations 2Pr were 6.6 μC/cm2and 27.1 μC/cm2, for the BTO films grown in pure argon and in mixed Ar/O2atmosphere, respectively.

Thermoelectric Properties of C-Axis-Oriented Ca3Co4O9+δ Films Grown on MgO-Buffered Si (100) by PLD Technique

2010 ◽  
Vol 29-32 ◽  
pp. 1913-1918
Author(s):  
Xia Zhang ◽  
Hong Chen ◽  
Qiu Hui Liao ◽  
Xia Li
Keyword(s):  
Thin Films ◽  
State Of The Art ◽  
Pulsed Laser ◽  
Buffer Layers ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
High Quality ◽  
X Ray ◽  
Current State ◽  
Good Crystallinity

High-quality c-axis-oriented Ca3Co4O9+δ thin films have been grown directly on Si (100) wafers with inserting MgO buffer layers by pulsed-laser deposition (PLD). X-ray diffraction and scan electron microscopy show good crystallinity of the Ca3Co4O9+δ films. The resistivity and Seebeck coefficient of the Ca3Co4O9+δ thin films on Si (100) substrates are 9.8 mΩcm and 189 μV/K at the temperature of 500K, respectively, comparable to the single-crystal samples. This advance demonstrates the possibility of integrating the cobaltate-based high thermoelectric materials with the current state-of-the-art silicon technology for thermoelectricity-on-a-chip applications.

Internal Stress of ZnO thin Films Caused by Thickness Distribution and Crystallinity

1998 ◽  
Vol 518 ◽  
Author(s):  
M. Takeuchi ◽  
K. Inoue ◽  
Y. Yoshino ◽  
K. Ohwada
Keyword(s):  
Thin Films ◽  
Stress Distribution ◽  
Thickness Distribution ◽  
Zno Thin Films ◽  
Optimum Thickness ◽  
X Ray Diffraction ◽  
Axis Orientation ◽  
X Ray ◽  
Argon Ions ◽  
Cosine Law

AbstractThe improvement of thickness distribution and crystallinity in ZnO thin films prepared by radio frequency (rf) planer magnetron sputtering has been studied. Optimum thickness distribution of less than ± 2.2% in a 3-inch wafer is obtained by changing the substrate angle to the ZnO target and is in accordance with cosine law. The c-axis orientation perpendicular to the silicon substrate is confirmed by x-ray diffraction. The stress of ZnO thin films is larger than 0.3GPa and its distribution is independent of the substrate angle that is set at a slant to the optimum angle for thickness distribution. These results indicate that thickness distribution of ZnO thin films heavily depends on the substrate angle, while the stress and its distribution are independent of the setting angle of the substrate. Stress distribution is attributed to the distribution of argon ions and sputtered molecules impinging a wafer.

scholarly journals Stress Gradients and Anisotropy in Thin Films

1988 ◽  
Vol 130 ◽  
Author(s):  
Robert M. Fisher ◽  
J. Z. Duan ◽  
Alan G. Fox
Keyword(s):  
Thin Films ◽  
Film Surface ◽  
Diffraction Peak ◽  
X Ray Diffraction ◽  
Thickness Strain ◽  
Strain Gradients ◽  
X Ray ◽  
Stress Gradients ◽  
Diffraction Peaks ◽  
Chromium Films

AbstractIndications that steep through-thickness strain gradients occur in vapour-deposited chromium films stemming from previous observations of film curling during spontaneous delamination from substrates, have been substantiated by analysis and simulation of Bragg X-Ray diffraction peaks. The presence of large through-thickness compressive strains, that increase quadratically with distance from the substrate from about zero at the interface to around 0.8% at the film surface, was deduced by empirical computer matching of diffraction peak shapes.

ZnO Films Deposited on Various Diamond Film Substrates with Different Surface Roughness

2011 ◽  
Vol 287-290 ◽  
pp. 2347-2350
Author(s):  
Rong Fan ◽  
Lin Jun Wang ◽  
Jian Huang ◽  
Ke Tang ◽  
Ji Jun Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Diamond Film ◽  
Zno Thin Films ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Free Standing ◽  
Axis Orientation ◽  
X Ray ◽  
Force Microscopy

ZnO thin films were deposited by radio frequency (R. F.) magnetron sputtering on various diamond film substrates with different surface roughness. The influence of surface roughness on structural properties and surface morphology of ZnO thin films was investigated by X-ray diffraction (XRD) and atom force microscopy (AFM), respectively. Only on the nanocrystalline and free-standing diamond substrates, ZnO films with preferential c-axis orientation and smooth surface were obtained.

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