Growth of Magnesium Oxide Thin Films Using Molecular Beam Epitaxy

Functional properties of thin film metal oxides depend upon their stoichiometric and structural uniformity. Controlling the film deposition process can help tune the functionality of these films by ensuring the control over chemistry and structure of the films. The high volume manufacturing of functional devices will benefit from the development of reliable control models developed from research efforts in designing robust manufacturing processes. The use of neural networks as computer models to simulate the molecular beam epitaxy (MBE) of iron oxide thin films is presented in this work. Monte Carlo experiments are used to study the sensitivities and significances of process control variables to the stoichiometric performance indicators. Moreover, we also explore the relationship between growth dynamics of iron oxide (Fe2O3, Fe3O4, and mixed FexOy) and magnesium oxide (MgO) thin films. The common metal adsorption controlled growth mechanism of two films with different structural and stoichiometric complexities were observed and the similarities among the trends of analogous stoichiometric indicators at comparable metal arrival rates of the two films are presented. The dependence of undesirable bonding states of iron and magnesium metals with the film thicknesses was also observed in both processes. The commonalities suggest the potential to use of neural network assisted Monte Carlo analysis to link common atomic-level mechanisms to processing variables in one nano-scale system and use them to predict some level of behavior in other nanoscale processes with similar atomic-level mechanisms.

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Growth and characterization of epitaxial tin oxide thin films by laser molecular beam epitaxy

10.32657/10356/50484 ◽

2011 ◽

Author(s):

Chang Ke

Keyword(s):

Thin Films ◽

Molecular Beam Epitaxy ◽

Tin Oxide ◽

Molecular Beam ◽

Oxide Thin Films ◽

Laser Molecular Beam Epitaxy

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Molecular beam epitaxy of oxide thin films using mass-separated low-energy O+ beams

Laser and Ion Beam Modification of Materials ◽

10.1016/b978-0-444-81994-9.50126-3 ◽

1994 ◽

pp. 601-604

Author(s):

Ryusuke Kita ◽

Kenichi Kawaguchi ◽

Takashi Hase ◽

Takeshi Koga ◽

Rittaporn Itti ◽

...

Keyword(s):

Thin Films ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Low Energy ◽

Oxide Thin Films

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Enhancement of room-temperature ferromagnetism in manganese oxide thin films grown on Nb:SrTiO3 substrates

Modern Physics Letters B ◽

10.1142/s0217984914501620 ◽

2014 ◽

Vol 28 (20) ◽

pp. 1450162

Author(s):

P. Hu ◽

S. X. Wu ◽

S. W. Li

Keyword(s):

Thin Films ◽

Molecular Beam Epitaxy ◽

Manganese Oxide ◽

Growth Process ◽

Room Temperature ◽

Oxygen Vacancies ◽

Molecular Beam ◽

Room Temperature Ferromagnetism ◽

Experimental Results ◽

Oxide Thin Films

In this paper, α- Mn 2 O 3 thin films were fabricated by plasma-assisted molecular beam epitaxy on SrTiO 3 and Nb : SrTiO 3, respectively. The grown samples showed room temperature ferromagnetism (RFM) properties. All the experimental results manifested that the RFM properties in undoped thin films were induced by oxygen vacancies formed during the growth process. Even more, the ferromagnetism of thin films grown on Nb : SrTiO 3 were enhanced, and these results confirmed the fact that oxygen vacancies induced ferromagnetism. That is to say, more oxygen vacancies result the more unpaired electrons induced prominent abnormal spin causing ferromagnetism.

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Electrical and Optical Properties of Zinc Oxide Thin Films and Heavily Aluminum-doped Zinc Oxide Thin Films Prepared by Molecular Beam Epitaxy

MRS Proceedings ◽

10.1557/proc-744-m5.1 ◽

2002 ◽

Vol 744 ◽

Cited By ~ 3

Author(s):

Takeshi Ohgaki ◽

Yuji Kawamura ◽

Naoki Ohashi ◽

Hirofumi Kakemoto ◽

Satoshi Wada ◽

...

Keyword(s):

Thin Films ◽

Zinc Oxide ◽

Optical Properties ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Band Edge Emission ◽

Oxide Thin Films ◽

Good Crystallinity ◽

Aluminum Doped Zinc Oxide ◽

High Carrier

ABSTRACTZnO (ZO) and Aluminum (Al) doped ZnO (AZO) films were grown on sapphire substrate via oxygen radical assisted molecular beam epitaxy (MBE) technique. The results of XRD measurement and temperature dependent Hall measurement confirmed that the AZO films were typically highly degenerate semiconductor with good crystallinity. The resistivity of these films were closed to the theoretical lower limit. The optical properties of these films were investigated by photoluminescence (PL) spectra and absorption spectra. Strong band-edge emission was observed in the AZO films with good crystallinity in spite of high carrier concentration more than 1020 cm-3. A sift of absorption edge to higher energy side and a gradual increase of the absorption was observed for the AZO film.

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