Test Method Study on Correlation of Electromagnetic Radiation and Injection for Microelectronic Devices

The present study proposed the equivalent test method for the strong electromagnetic field radiation of electric explosive devices (EEDs) of the weapon equipment to satisfy the military requirements of the electromagnetic radiation safety test, as well as the evaluation of the electric ignition, the electric initiation ammunition, or missiles. Under stable conditions, the ignition excitation test and the bridge wire temperature increase test were performed to determine the ignition temperature of the EED. As radiated by the strong electromagnetic field, the relationship between the temperature increase of the bridge wire and the electric field intensity of the EED was developed based on the theoretical analysis and the experimental test. Given the ignition temperature of the EED, the radiation field intensity of the EED at 50% ignition was determined. As compared with the 50% ignition field intensity of the EED directly radiated by the strong electromagnetic field, an error less than 1 dB was caused. On that basis, the correctness of the equivalent test method was verified. Accordingly, this method was suggested to act as an effective method and technical means to test and evaluate the electromagnetic radiation safety of ammunition and missiles in unfavorable electromagnetic environments.

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Research on the test method of substituting bulk current injection for electromagnetic radiation in the coupling channel of parallel double lines

AIP Advances ◽

10.1063/5.0042876 ◽

2021 ◽

Vol 11 (5) ◽

pp. 055205

Author(s):

Jiangning Sun ◽

Xiaodong Pan ◽

Xinfu Lu ◽

Haojiang Wan ◽

Guanghui Wei

Keyword(s):

Electromagnetic Radiation ◽

Current Injection ◽

Test Method ◽

Coupling Channel

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Single Sample Cylinder for RGA Correlation

Journal of Microelectronics and Electronic Packaging ◽

10.4071/1551-4897-4.2.64 ◽

2007 ◽

Vol 4 (2) ◽

pp. 64-71 ◽

Cited By ~ 1

Author(s):

Philipp wh Schuessler ◽

Daniel J. Rossiter ◽

Robert K. Lowry ◽

Sheryl M. Sierzant

Keyword(s):

Hydrogen Diffusion ◽

High Reliability ◽

Gas Analysis ◽

Test Method ◽

Single Sample ◽

Microelectronic Devices ◽

Primary Means ◽

Residual Gas ◽

Adsorption Desorption ◽

The Military

A large portion the manufacturers of high reliability microelectronic devices must have those devices tested to be proven “dry”. A mass spectrographic technique, referred to as Residual Gas Analysis (RGA) has been the primary means of demonstrating that the devices contain less than the 5000 parts per million(ppm) of moisture. However, there are no standards for determining moisture levels of this nature when tested in this manner. Too often, the pass/fail criteria for a given production lot is exceeded and recourse becomes time consuming and expensive. A small group of technologists has successfully fabricated and tested a Single Sample Cylinder (SSC) wherein moisture-laden air can be taken from one analytical facility to another for comparison analyses. The need for such a device is explained by a brief review of why “identical” microelectronic devices from the same production line have been found to contain different chemistries when analyzed via Residual Gas Analysis, per Test Method 1018 of the military standards. The SSC is over two liters in volume; hence it can deliver hundreds of “air samples” that have the same chemical composition. It is maintained at 100° C during test but is kept at room ambient during non-analytical periods. Several major problems had to be overcome in order to be able to continuously generate samples of the same chemistry. The primary two were moisture adsorption to all of the various exposed surfaces, and second was hydrogen diffusion from the materials of construction, with subsequent oxide reduction to form more water. Some anomalies were experienced during initial preparation of the SSC and the early hours of equilibration. These again are believed to be adsorption/desorption related. Thereafter it was shown that the SSC could deliver samples that were within 2% of each other, or better, within a sample set. The level of precision between sample sets was +/− 2.5%. This study was developed on a statistical basis, involving over 100 data points and was carried out over 1450 hours. The gas analyses were performed in a Defense Supply Center Columbus (DSCC) certified testing facility. This study was conducted with the support of an additional analytical chemist and a statistician to assure that data generated met the goals of the stated objective.

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Characterization of Sputtered Films using the Scanning Electron Microscope

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100070667 ◽

1973 ◽

Vol 31 ◽

pp. 44-45

Author(s):

R. F. Schneidmiller ◽

W. F. Thrower ◽

C. Ang

Keyword(s):

Electron Microscope ◽

Scanning Electron Microscope ◽

Thin Film Deposition ◽

Film Deposition ◽

Sputtered Films ◽

Plasma Sputtering ◽

Microelectronic Devices ◽

Control Film ◽

Scanning Electron

Solid state materials in the form of thin films have found increasing structural and electronic applications. Among the multitude of thin film deposition techniques, the radio frequency induced plasma sputtering has gained considerable utilization in recent years through advances in equipment design and process improvement, as well as the discovery of the versatility of the process to control film properties. In our laboratory we have used the scanning electron microscope extensively in the direct and indirect characterization of sputtered films for correlation with their physical and electrical properties.Scanning electron microscopy is a powerful tool for the examination of surfaces of solids and for the failure analysis of structural components and microelectronic devices.

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Ion Beam Induced Interfacial Reactions in Molybdenum Thin Films on Silicon

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100097466 ◽

1981 ◽

Vol 39 ◽

pp. 162-163

Author(s):

L. J. Chen ◽

L. S. Hung ◽

J. W. Mayer

Keyword(s):

Ion Beam ◽

Chemical Vapor ◽

Interfacial Reactions ◽

Practical Applications ◽

Microelectronic Devices ◽

Recent Emergence ◽

Chemical Vapor Deposited ◽

Atomic Mixing ◽

Silicon Interface ◽

Kinetics Of

When an energetic ion penetrates through an interface between a thin film (of species A) and a substrate (of species B), ion induced atomic mixing may result in an intermixed region (which contains A and B) near the interface. Most ion beam mixing experiments have been directed toward metal-silicon systems, silicide phases are generally obtained, and they are the same as those formed by thermal treatment.Recent emergence of silicide compound as contact material in silicon microelectronic devices is mainly due to the superiority of the silicide-silicon interface in terms of uniformity and thermal stability. It is of great interest to understand the kinetics of the interfacial reactions to provide insights into the nature of ion beam-solid interactions as well as to explore its practical applications in device technology.About 500 Å thick molybdenum was chemical vapor deposited in hydrogen ambient on (001) n-type silicon wafer with substrate temperature maintained at 650-700°C. Samples were supplied by D. M. Brown of General Electric Research & Development Laboratory, Schenectady, NY.

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