High-rate superplasticity in an equiatomic medium-entropy VCoNi alloy enabled through dynamic recrystallization of a duplex microstructure of ordered phases

Due to the high rate of dynamic recovery associated with the large stacking fault energy of the bcc structure, classical "discontinuous" dynamic recrystallization, occurring by nucleation and growth of new grains is not observed in the β phase of titanium alloys. Instead, the following mechanisms take place: at low and moderate strains (ε < 1), the original flattened (compression) or sheared (torsion) grains are still recognizable, although their boundaries are strongly serrated. In this strain range, grain size (thickness) results from both the convection and the migration of grain boundaries. At intermediate strains, "geometric" dynamic recrystallization leading to "pinching off" events of the original grains is observed, whereas at larger strains (ε > 5), grain fragmentation occurs by the generation of new grain boundaries ("continuous" dynamic recrystallization). The associated flow stress often exhibits pronounced softening and the resulting (equiaxed) grain size can be much smaller than the initial one. It is worth to note that a very similar sequence of mechanisms takes place in ferritic steels, as well as in aluminium alloys, in spite of their different crystallographic structure. In this paper, the above mechanisms will be illustrated by a set of data pertaining to titanium alloys.

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Structure of Palladium Single-Crystal Films Prepared by Flash Evaporation onto (001) NaCl Substrates

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100069272 ◽

1970 ◽

Vol 28 ◽

pp. 456-457

Author(s):

L. E. Murr ◽

G. Wong

Keyword(s):

Single Crystal ◽

High Vacuum ◽

Ultra High Vacuum ◽

High Rate ◽

Flash Evaporation ◽

Optimum Load ◽

Single Crystal Films ◽

Crystal Films ◽

A Current

Palladium single-crystal films have been prepared by Matthews in ultra-high vacuum by evaporation onto (001) NaCl substrates cleaved in-situ, and maintained at ∼ 350° C. Murr has also produced large-grained and single-crystal Pd films by high-rate evaporation onto (001) NaCl air-cleaved substrates at 350°C. In the present work, very large (∼ 3cm2), continuous single-crystal films of Pd have been prepared by flash evaporation onto air-cleaved (001) NaCl substrates at temperatures at or below 250°C. Evaporation rates estimated to be ≧ 2000 Å/sec, were obtained by effectively short-circuiting 1 mil tungsten evaporation boats in a self-regulating system which maintained an optimum load current of approximately 90 amperes; corresponding to a current density through the boat of ∼ 4 × 104 amperes/cm2.

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Diffraction from arrays of antiphase boundaries in ordered III-V alloys

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100126378 ◽

1987 ◽

Vol 45 ◽

pp. 312-313

Author(s):

T. S. Kuan

Keyword(s):

High Surface ◽

Growth Conditions ◽

Ternary Alloys ◽

Local Growth ◽

Antiphase Boundaries ◽

Surface Mobility ◽

Ordered Phases ◽

Diffraction Patterns ◽

Atomically Flat ◽

Degree Of Order

Recent electron diffraction studies have found ordered phases in AlxGa1-xAs, GaAsxSb1-x, and InxGa1-xAs alloy systems, and these ordered phases are likely to be found in many other III-V ternary alloys as well. The presence of ordered phases in these alloys was detected in the diffraction patterns through the appearance of superstructure reflections between the Bragg peaks (Fig. 1). The ordered phase observed in the AlxGa1-xAs and InxGa1-xAs systems is of the CuAu-I type, whereas in GaAsxSb1-x this phase and a chalcopyrite type ordered phase can be present simultaneously. The degree of order in these alloys is strongly dependent on the growth conditions, and during the growth of these alloys, high surface mobility of the depositing species is essential for the onset of ordering. Thus, the growth on atomically flat (110) surfaces usually produces much stronger ordering than the growth on (100) surfaces. The degree of order is also affected by the presence of antiphase boundaries (APBs) in the ordered phase. As shown in Fig. 2(a), a perfectly ordered In0.5Ga0.5As structure grown along the <110> direction consists of alternating InAs and GaAs monolayers, but due to local growth fluctuations, two types of APBs can occur: one involves two consecutive InAs monolayers and the other involves two consecutive GaAs monolayers.

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Rapid Freezing of Freeze-Etch Specimens

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s1431927600003275 ◽

1980 ◽

Vol 38 ◽

pp. 752-755

Author(s):

A. Elgsaeter ◽

T. Espevik ◽

G. Kopstad

Keyword(s):

Low Temperature ◽

Metal Surface ◽

Relative Velocity ◽

Thermal Contact ◽

High Rate ◽

Rapid Freezing ◽

Temperature Decrease ◽

Freeze Etching

The importance of a high rate of temperature decrease (“rapid freezing”) when freezing specimens for freeze-etching has long been recognized1. The two basic methods for achieving rapid freezing are: 1) dropping the specimen onto a metal surface at low temperature, 2) bringing the specimen instantaneously into thermal contact with a liquid at low temperature and subsequently maintaining a high relative velocity between the liquid and the specimen. Over the last couple of years the first method has received strong renewed interest, particularily as the result of a series of important studies by Heuser and coworkers 2,3. In this paper we will compare these two freezing methods theoretically and experimentally.

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