Improved performance of nanoscale junctionless carbon nanotube tunneling FETs using dual-material source gate design: A quantum simulation study

AEU - International Journal of Electronics and Communications ◽

10.1016/j.aeue.2020.153491 ◽

2020 ◽

Vol 127 ◽

pp. 153491 ◽

Cited By ~ 1

Author(s):

Khalil Tamersit

Keyword(s):

Carbon Nanotube ◽

Simulation Study ◽

Quantum Simulation ◽

Material Source ◽

Improved Performance ◽

Dual Material ◽

Gate Design

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Dynamic Two-Port Parameters of Ballistic Carbon Nanotube FETs: A Quantum Simulation Study

2007 65th Annual Device Research Conference ◽

10.1109/drc.2007.4373671 ◽

2007 ◽

Author(s):

Yijian Ouyang ◽

Jing Guo

Keyword(s):

Carbon Nanotube ◽

Simulation Study ◽

Quantum Simulation ◽

Carbon Nanotube Fets

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Improved performance of sub-10-nm band-to-band tunneling n-i-n graphene nanoribbon field-effect transistors using underlap engineering: A quantum simulation study

Journal of Physics and Chemistry of Solids ◽

10.1016/j.jpcs.2021.110312 ◽

2021 ◽

pp. 110312

Author(s):

Khalil Tamersit ◽

Zeinab Ramezani ◽

I.S. Amiri

Keyword(s):

Simulation Study ◽

Field Effect ◽

Field Effect Transistors ◽

Quantum Simulation ◽

Graphene Nanoribbon ◽

Band To Band Tunneling ◽

Improved Performance

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Quantum simulation study of dual-material double gate (DMDG) MOSFET: NEGF approach

2008 IEEE Silicon Nanoelectronics Workshop ◽

10.1109/snw.2008.5418485 ◽

2008 ◽

Cited By ~ 1

Author(s):

Zahra Arefinia ◽

Ali A. Orouji

Keyword(s):

Simulation Study ◽

Quantum Simulation ◽

Double Gate ◽

Dual Material

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Analog/RF performance assessment of ferroelectric junctionless carbon nanotube FETs: A quantum simulation study

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/j.physe.2021.114915 ◽

2021 ◽

pp. 114915

Author(s):

Khalil Tamersit ◽

Mohammad Khaleqi Qaleh Jooq ◽

Mohammad Hossein Moaiyeri

Keyword(s):

Carbon Nanotube ◽

Performance Assessment ◽

Simulation Study ◽

Quantum Simulation ◽

Rf Performance ◽

Carbon Nanotube Fets

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Impact of Temperature Variation on Performance of Carbon Nanotube Field-Effect Transistor—Based on Chaotic Oscillator: A Quantum Simulation Study

Chinese Physics Letters ◽

10.1088/0256-307x/32/3/038201 ◽

2015 ◽

Vol 32 (3) ◽

pp. 038201 ◽

Cited By ~ 1

Author(s):

Ha Nguyen Van ◽

Song Hanjung

Keyword(s):

Carbon Nanotube ◽

Temperature Variation ◽

Simulation Study ◽

Field Effect ◽

Field Effect Transistor ◽

Quantum Simulation ◽

Chaotic Oscillator ◽

Effect Transistor

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Quantum Simulation Study of a New Carbon Nanotube Field-Effect Transistor With Electrically Induced Source/Drain Extension

IEEE Transactions on Device and Materials Reliability ◽

10.1109/tdmr.2009.2015458 ◽

2009 ◽

Vol 9 (2) ◽

pp. 237-243 ◽

Cited By ~ 26

Author(s):

Z. Arefinia ◽

A.A. Orouji

Keyword(s):

Carbon Nanotube ◽

Simulation Study ◽

Field Effect ◽

Field Effect Transistor ◽

Quantum Simulation ◽

Effect Transistor

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Impact of single halo implantation on the carbon nanotube field-effect transistor: A quantum simulation study

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/j.physe.2008.07.003 ◽

2008 ◽

Vol 41 (2) ◽

pp. 196-201 ◽

Cited By ~ 23

Author(s):

Zahra Arefinia ◽

Ali A. Orouji

Keyword(s):

Carbon Nanotube ◽

Simulation Study ◽

Field Effect ◽

Field Effect Transistor ◽

Quantum Simulation ◽

Effect Transistor

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Quantum simulation study of single halo dual-material gate CNTFETs

Solid-State Electronics ◽

10.1016/j.sse.2013.10.014 ◽

2014 ◽

Vol 91 ◽

pp. 147-151 ◽

Cited By ~ 11

Author(s):

Wei Wang ◽

Na Li ◽

Chunping Xia ◽

Guangran Xiao ◽

Yuzhou Ren ◽

...

Keyword(s):

Simulation Study ◽

Quantum Simulation ◽

Dual Material

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Attributes in the Performance and Design Considerations of Asymmetric Drain and Source Regions in Carbon Nanotube Field Effect Transistors: Quantum Simulation Study

ECS Journal of Solid State Science and Technology ◽

10.1149/2.0061607jss ◽

2016 ◽

Vol 5 (7) ◽

pp. M63-M68 ◽

Cited By ~ 13

Author(s):

Ali Naderi ◽

Seyed Abolfazl Ahmadmiri

Keyword(s):

Carbon Nanotube ◽

Simulation Study ◽

Field Effect ◽

Field Effect Transistors ◽

Quantum Simulation ◽

Design Considerations ◽

Source Regions

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Performance Assessment of a New Radiation Dosimeter Based on Carbon Nanotube Field-Effect Transistor: A Quantum Simulation Study

IEEE Sensors Journal ◽

10.1109/jsen.2019.2894440 ◽

2019 ◽

Vol 19 (9) ◽

pp. 3314-3321 ◽

Cited By ~ 9

Author(s):

Khalil Tamersit

Keyword(s):

Carbon Nanotube ◽

Performance Assessment ◽

Simulation Study ◽

Field Effect ◽

Field Effect Transistor ◽

Quantum Simulation ◽

Effect Transistor

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