On the improvement of PEC activity of hematite thin films deposited by high-power pulsed magnetron sputtering method

2015 ◽  
Vol 165 ◽  
pp. 344-350 ◽  
Author(s):  
S. Kment ◽  
Z. Hubicka ◽  
J. Krysa ◽  
D. Sekora ◽  
M. Zlamal ◽  
...  
Coatings ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 579
Author(s):  
Donglin Ma ◽  
Qiaoyuan Deng ◽  
Huaiyuan Liu ◽  
Yongxiang Leng

Titanium nitride (Ti-N) thin films are electrically and thermally conductive and have high hardness and corrosion resistance. Dense and defect-free Ti-N thin films have been widely used in the surface modification of cutting tools, wear resistance components, medical implantation devices, and microelectronics. In this study, Ti-N thin films were deposited by high power pulsed magnetron sputtering (HPPMS) and their plasma characteristics were analyzed. The ion energy of Ti species was varied by adjusting the substrate bias voltage, and its effect on the microstructure, residual stress, and adhesion of the thin films were studied. The results show that after the introduction of nitrogen gas, a Ti-N compound layer was formed on the surface of the Ti target, which resulted in an increase in the Ti target discharge peak power. In addition, the total flux of the Ti species decreased, and the ratio of the Ti ions increased. The Ti-N thin film deposited by HPPMS was dense and defect-free. When the energy of the Ti ions was increased, the grain size and surface roughness of the Ti-N film decreased, the residual stress increased, and the adhesion strength of the Ti-N thin film decreased.


2013 ◽  
Vol 31 (1) ◽  
pp. 011503 ◽  
Author(s):  
Susann Schmidt ◽  
Zsolt Czigány ◽  
Grzegorz Greczynski ◽  
Jens Jensen ◽  
Lars Hultman

2019 ◽  
Vol 33 (01n03) ◽  
pp. 1940017 ◽  
Author(s):  
D. L. Ma ◽  
Y. T. Li ◽  
Q. Y. Deng ◽  
B. Huang ◽  
Y. X. Leng ◽  
...  

Titanium (Ti) thin films with (002) or (100) texture are favored for many applications. In this paper, Ti thin films were prepared by high-power pulsed magnetron sputtering, and the texture of Ti thin films was successfully tailored by adjusting the pulse width, substrate bias and magnetic field strength. It is found that the peak power and average power of the Ti target are increased by increasing sputtering pulse width and decreasing magnetic field strength, which raise the Ti plasma flux and ion/atom ratio of Ti ions in front of the substrate simultaneously. Ti thin films with a highly (002) out-of-plane texture can be obtained with higher pulse width and lower magnetic field strength. The Ti thin films with highly (100) out-of-plane texture can be achieved with shorter pulse width, lower magnetic field strength and substrate bias.


2008 ◽  
Vol 516 (14) ◽  
pp. 4472-4477 ◽  
Author(s):  
F. Ruske ◽  
A. Pflug ◽  
V. Sittinger ◽  
W. Werner ◽  
B. Szyszka ◽  
...  

2021 ◽  
pp. 138792
Author(s):  
K. Bobzin ◽  
T. Brögelmann ◽  
N.C. Kruppe ◽  
M. Engels ◽  
C. Schulze

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