Correlation Between Annealing Temperature and Crystallinity of Si Films Prepared by Thermal Plasma Jet Crystallization Technique

2006 ◽  
Vol 910 ◽  
Author(s):  
Hirotaka Kaku ◽  
Seiichiro Higashi ◽  
Tatsuya Okada ◽  
Hideki Murakami ◽  
Seiichi Miyazaki
Keyword(s):  
Phase Transformation ◽  
Thermal Plasma ◽  
Crystalline State ◽  
Annealing Temperature ◽  
Solid Phase ◽  
Plasma Jet ◽  
Solid Phase Crystallization ◽  
Thermal Plasma Jet ◽  
Amorphous Si ◽  
Si Films

AbstractTransient reflectivity of amorphous Si (a-Si) films during thermal plasma jet (TPJ) irradiation has been measured to characterize the phase transformation in millisecond time domain. The a-Si films first transform to crystalline by solid phase crystallization (SPC) followed by melting of the film, and then solidifies to the final crystalline state. By increasing the SPC temperature from about 1100 K to 1300 K, the duration of phase transformation decreases from about 1 ms to 100 μs. The crystallinity of the SPC films is improved not only by annealing the films at a high temperature but also annealing them with longer duration.

A new crystallization technique of Si films on glass substrate using thermal plasma jet

2005 ◽  
Vol 244 (1-4) ◽  
pp. 8-11 ◽  
Author(s):  
H. Kaku ◽  
S. Higashi ◽  
H. Taniguchi ◽  
H. Murakami ◽  
S. Miyazaki
Keyword(s):  
Thermal Plasma ◽  
Glass Substrate ◽  
Plasma Jet ◽  
Thermal Plasma Jet ◽  
Si Films

Copper-Enhanced Solid Phase Crystallization of Amorphous Silicon Films

1996 ◽  
Vol 424 ◽  
Author(s):  
Dong Kyun Sohn ◽  
Dae Gyu Moon ◽  
Byung Tae Ahn
Keyword(s):  
Solid Phase ◽  
Copper Ions ◽  
Crystallization Time ◽  
Solid Phase Crystallization ◽  
New Process ◽  
Low Temperature Crystallization ◽  
Amorphous Si ◽  
Si Films ◽  
Fractal Size ◽  
Temperature Crystallization

AbstractLow-temperature crystallization of amorphous Si (a-Si) films was investigated by adsorbing copper ions on the surface of the films. The copper ions were adsorbed by spincoating of Cu solution. This new process lowered the crystallization temperature and reduced crystallization time of a-Si films. For 1000 ppm solution, the a-Si film was partly crystallized down to 500°C in 20 h and almost completely crystallized at 530°C in 20 h. The adsorbed Cu on the surface acted as a seed of crystalline and caused fractal growth. The fractal size was varied from 10 to 200 prm, depending on the Cu concentration in solution. But the grain size of the films was about 400 nm, which was similar to that of intrinsic films crystallized at 600°C.

scholarly journals Electrical Characteristics of Lightly-Doped Si Films Crystallized by Thermal Plasma Jet Irradiation

2007 ◽  
Vol 32 (2) ◽  
pp. 465-468
Author(s):  
T. Yorimoto ◽  
S. Higashi ◽  
H. Kaku ◽  
T. Okada ◽  
H. Murakami ◽  
...  
Keyword(s):  
Thermal Plasma ◽  
Plasma Jet ◽  
Electrical Characteristics ◽  
Thermal Plasma Jet ◽  
Si Films

Grain Growth Control during Micro-Thermal-Plasma-Jet Irradiation Using Amorphous Si Strips and Slit Masks

2013 ◽  
Vol 50 (8) ◽  
pp. 29-34
Author(s):  
Y. Fujita ◽  
S. Hayashi ◽  
K. Sakaike ◽  
S. Higashi
Keyword(s):  
Grain Growth ◽  
Thermal Plasma ◽  
Growth Control ◽  
Plasma Jet ◽  
Thermal Plasma Jet ◽  
Amorphous Si

Solid Phase Crystallization of LPCVD Amorphous Si Films by Nucleation Interface Control

1996 ◽  
Vol 448 ◽  
Author(s):  
Eui-Hoon Hwang ◽  
Jae-Sang Ro
Keyword(s):  
Grain Size ◽  
Incubation Time ◽  
Solid Phase ◽  
Composite Films ◽  
Deposition Condition ◽  
Solid Phase Crystallization ◽  
Interface Control ◽  
Amorphous Si ◽  
Si Films ◽  
Deposition Conditions

AbstractA novel method for the fabrication of poly-Si films with a large grain size is reported using solid phase crystallization (SPC) of LPCVD amorphous Si films by nucleation interface control. The reference films used in this study were 1000 Ǻ -thick a-Si films deposited at 500°C at a total pressure of 0.35 Torr using Si2H6/He. Since the deposition condition changes the incubation time, i.e. nucleation rate, and since nucleation occurs dominantly at a-Si/SiO2 interface, we devised the following deposition techniques for the first time in order to obtain the larger gain size. A very thin a-Si layer (~ 50 Ǻ) with the deposition conditions having long incubation time is grown first and then the reference films (~ 950 Ǻ) are grown successively. Various composite films with different combinations were tested. The crystallization kinetics of composite films was observed to be determined by the deposition conditions of a thin a-Si layer at the a-Si/SiO2 interface. Nucleation interface was also observed to be modified by interrupted gas supply resulting in the enhancement of the grain size.

Crystallization of Si films on glass substrate using thermal plasma jet

2005 ◽  
Vol 487 (1-2) ◽  
pp. 122-125 ◽  
Author(s):  
S. Higashi ◽  
H. Kaku ◽  
H. Taniguchi ◽  
H. Murakami ◽  
S. Miyazaki
Keyword(s):  
Thermal Plasma ◽  
Glass Substrate ◽  
Plasma Jet ◽  
Thermal Plasma Jet ◽  
Si Films
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