Electrical Characteristics of Lightly-Doped Si Films Crystallized by Thermal Plasma Jet Irradiation

Abstract Crystalline-germanium (c-Ge) is an attractive material for a thin-film transistor (TFT) channel because of its high carrier mobility and applicability to a low-temperature process. We present the electrical characteristics of c-Ge crystallized by atmospheric pressure micro-thermal-plasma-jet (µ-TPJ). The µ-TPJ crystalized c-Ge showed the maximum Hall mobility of 1070 cm2·V−1·s−1 with its hole concentration of ~ 1016 cm−3, enabling us to fabricate the TFT with field-effect mobility (μ FE) of 196 cm2·V−1·s−1 and ON/OFF ratio (R ON/OFF) of 1.4 × 104. On the other hand, RON/OFFs and μFEs were dependent on the scanning speed of the TPJ, inferring different types of defects were induced in the channel regions. These findings show not only a possibility of the TPJ irradiation as a promising method to make a c-Ge TFT on insulating substrates.

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Investigation of silicon grain structure and electrical characteristics of TFTs fabricated using different crystallized silicon films by atmospheric pressure micro-thermal-plasma-jet irradiation

Japanese Journal of Applied Physics ◽

10.7567/jjap.53.03dg02 ◽

2014 ◽

Vol 53 (3S2) ◽

pp. 03DG02 ◽

Cited By ~ 2

Author(s):

Shohei Hayashi ◽

Seiji Morisaki ◽

Takahiro Kamikura ◽

Shogo Yamamoto ◽

Kohei Sakaike ◽

...

Keyword(s):

Thermal Plasma ◽

Atmospheric Pressure ◽

Plasma Jet ◽

Silicon Films ◽

Grain Structure ◽

Electrical Characteristics ◽

Thermal Plasma Jet

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Crystallization of Si films on glass substrate using thermal plasma jet

Thin Solid Films ◽

10.1016/j.tsf.2005.01.048 ◽

2005 ◽

Vol 487 (1-2) ◽

pp. 122-125 ◽

Cited By ~ 15

Author(s):

S. Higashi ◽

H. Kaku ◽

H. Taniguchi ◽

H. Murakami ◽

S. Miyazaki

Keyword(s):

Thermal Plasma ◽

Glass Substrate ◽

Plasma Jet ◽

Thermal Plasma Jet ◽

Si Films

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Correlation Between Annealing Temperature and Crystallinity of Si Films Prepared by Thermal Plasma Jet Crystallization Technique

MRS Proceedings ◽

10.1557/proc-0910-a21-18 ◽

2006 ◽

Vol 910 ◽

Author(s):

Hirotaka Kaku ◽

Seiichiro Higashi ◽

Tatsuya Okada ◽

Hideki Murakami ◽

Seiichi Miyazaki

Keyword(s):

Phase Transformation ◽

Thermal Plasma ◽

Crystalline State ◽

Annealing Temperature ◽

Solid Phase ◽

Plasma Jet ◽

Solid Phase Crystallization ◽

Thermal Plasma Jet ◽

Amorphous Si ◽

Si Films

AbstractTransient reflectivity of amorphous Si (a-Si) films during thermal plasma jet (TPJ) irradiation has been measured to characterize the phase transformation in millisecond time domain. The a-Si films first transform to crystalline by solid phase crystallization (SPC) followed by melting of the film, and then solidifies to the final crystalline state. By increasing the SPC temperature from about 1100 K to 1300 K, the duration of phase transformation decreases from about 1 ms to 100 μs. The crystallinity of the SPC films is improved not only by annealing the films at a high temperature but also annealing them with longer duration.

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