Synthesis and optical characterization of c-axis oriented GaN thin films on amorphous quartz glass via sol–gel process

2008 ◽  
Vol 254 (16) ◽  
pp. 5257-5260 ◽  
Author(s):  
Godhuli Sinha ◽  
Kalyan Adhikary ◽  
Subhadra Chaudhuri
2000 ◽  
Vol 70 (3) ◽  
pp. 293-296 ◽  
Author(s):  
Q.F. Zhou ◽  
H.L.W. Chan ◽  
C.L. Choy

2012 ◽  
Vol 41 (1) ◽  
pp. 60-64 ◽  
Author(s):  
M. Vishwas ◽  
K. Narasimha Rao ◽  
A. R. Phani ◽  
K. V. Arjuna Gowda

2014 ◽  
Vol 58 ◽  
pp. 114-118 ◽  
Author(s):  
K. Lazarova ◽  
M. Vasileva ◽  
G. Marinov ◽  
T. Babeva

2013 ◽  
Vol 61 (1) ◽  
pp. 10302 ◽  
Author(s):  
Feroz Ahmad Mir ◽  
Javid A. Banday ◽  
Christian Chong ◽  
Pierre Dahoo ◽  
Fayaz A. Najar

1997 ◽  
Vol 12 (3) ◽  
pp. 596-599 ◽  
Author(s):  
Ji Zhou ◽  
Qing-Xin Su ◽  
K. M. Moulding ◽  
D. J. Barber

Ba(Mg1/3Ta2/3)O3 thin films were prepared by a sol-gel process involving the reaction of barium isopropoxide, tantalum ethoxide, and magnesium acetate in 2-methoxyethanol and subsequently hydrolysis, spin-coating, and heat treatment. Transmission electron microscopy, x-ray diffraction, and Raman spectroscopy were used for the characterization of the thin films. It was shown that the thin films tend to crystallize with small grains sized below 100 nm. Crystalline phase with cubic (disordered) perovskite structure was formed in the samples annealed at a very low temperature (below 500 °C), and well-crystallized thin films were obtained at 700 °C. Although disordered perovskite is dominant in the thin films annealed below 1000 °C, a low volume fraction of 1 : 2 ordering domains was found in the samples and grows with an increase of annealing temperature.


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