Effects of carbon content and plasma power on room temperature photoluminescence characteristics of hydrogenated amorphous silicon carbide thin films deposited by PECVD

2017 ◽  
Vol 636 ◽  
pp. 85-92 ◽  
Author(s):  
İbrahim Güneş ◽  
Kıvanç Sel
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Carbon Content ◽  
Amorphous Silicon ◽  
Room Temperature ◽  
Hydrogenated Amorphous Silicon ◽  
Plasma Power ◽  
Amorphous Silicon Carbide ◽  
Room Temperature Photoluminescence ◽  
Hydrogenated Amorphous

RF-PECVD deposition and optical properties of hydrogenated amorphous silicon carbide thin films

2014 ◽  
Vol 40 (7) ◽  
pp. 9791-9797 ◽  
Author(s):  
Enlong Chen ◽  
Guoping Du ◽  
Yu Zhang ◽  
Xiaomei Qin ◽  
Hongmei Lai ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Optical Properties ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Amorphous Silicon Carbide ◽  
Hydrogenated Amorphous

scholarly journals Investigations on phosphorous doped hydrogenated amorphous silicon carbide thin films deposited by a filtered cathodic vacuum arc technique for photo detecting applications

RSC Advances ◽  
2014 ◽  
Vol 4 (97) ◽  
pp. 54388-54397 ◽  
Author(s):  
R. K. Tripathi ◽  
O. S. Panwar ◽  
A. K. Kesarwani ◽  
Ishpal Rawal ◽  
B. P. Singh ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Vacuum Arc ◽  
Amorphous Silicon Carbide ◽  
Silicon Target ◽  
Filtered Cathodic Vacuum Arc ◽  
Hydrogenated Amorphous

This paper reports the growth and properties of phosphorous doped hydrogenated amorphous silicon carbide thin films deposited by a filtered cathodic vacuum arc technique using P doped solid silicon target as a cathode in the presence of acetylene gas.

FULL-COLOR PHOTO- AND ELECTRO-LUMINESCENCE FROM HYDROGENATED AMORPHOUS SILICON CARBIDE FILMS PREPARED BY USING ORGANIC SOURCE

2002 ◽  
Vol 16 (06n07) ◽  
pp. 1057-1061 ◽  
Author(s):  
JUN XU ◽  
TIANFU MA ◽  
XIAOHUI HUANG ◽  
LI WANG ◽  
WEI LI ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Band Gap ◽  
Room Temperature ◽  
Optical Band Gap ◽  
Hydrogenated Amorphous Silicon ◽  
Amorphous Silicon Carbide ◽  
Hydrogenated Amorphous ◽  
Electro Luminescence ◽  
Organic Source

A series of hydrogenated amorphous silicon carbide (a-Si1-xCx:H) films (0 < x ≤ 1) were grown by using an organic source, xylene (C8H10), instead of methane (CH4) in a conventional plasma enhanced chemical vapor deposition system. The optical band gap of these samples was altered over a wide range by changing the gas ratio of C8H10 to SiH4, the maximum value can be reached as high as 3.6eV. Photoluminescence (PL) measurements were carried out at room temperature by using a Xe lamp as an excitation light. It was found that the PL peak is blue shifted with increasing optical band gap. The xylene-based a-SiC:H electro-luminescence (EL) device structure was also fabricated and room temperature EL behavior was investigated. It was found that the EL peak depended on the band gap of a-C:H films and a stable emission can be obtained by using the suitable structure parameters.

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