Combining a molecular modelling approach with direct current and high power impulse magnetron sputtering to develop new TiO2 thin films for antifouling applications

2015 ◽  
Vol 333 ◽  
pp. 186-193 ◽  
Author(s):  
Jérôme Guillot ◽  
Elodie Lecoq ◽  
David Duday ◽  
Eini Puhakka ◽  
Markus Riihimäki ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Direct Current ◽  
High Power ◽  
Molecular Modelling ◽  
Tio2 Thin Films ◽  
Modelling Approach

scholarly journals Reactive sputtering of δ-ZrH2 thin films by high power impulse magnetron sputtering and direct current magnetron sputtering

2014 ◽  
Vol 32 (4) ◽  
pp. 041510 ◽  
Author(s):  
Hans Högberg ◽  
Lina Tengdelius ◽  
Mattias Samuelsson ◽  
Fredrik Eriksson ◽  
Esteban Broitman ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Direct Current ◽  
High Power ◽  
Reactive Sputtering ◽  
Direct Current Magnetron Sputtering

High power impulse magnetron sputtering (HiPIMS) for the fabrication of antimicrobial and transparent TiO2 thin films

2022 ◽  
Vol 36 ◽  
pp. 100782
Author(s):  
Bih-Show Lou ◽  
Wei-Ting Chen ◽  
Wahyu Diyatmika ◽  
Jong-Hong Lu ◽  
Chen-Te Chang ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
High Power ◽  
Tio2 Thin Films

Growth of TiO2 thin films on Si(001) and SiO2 by reactive high power impulse magnetron sputtering

2011 ◽  
Vol 1352 ◽  
Author(s):  
F. Magnus ◽  
B. Agnarsson ◽  
A. S. Ingason ◽  
K. Leosson ◽  
S. Olafsson ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Magnetron Sputtering ◽  
Film Thickness ◽  
High Power ◽  
Amorphous Matrix ◽  
Dc Magnetron Sputtering ◽  
Tio2 Thin Films ◽  
Temperature Range ◽  
Order Of Magnitude

ABSTRACTThin TiO2 films were grown on Si(001) and SiO2 substrates by reactive dc magnetron sputtering (dcMS) and high power impulse magnetron sputtering (HiPIMS) at temperatures ranging from 300 to 700 °C. Both dcMS and HiPIMS produce polycrystalline rutile TiO2 grains, embedded in an amorphous matrix, despite no postannealing taking place. HiPIMS results in significantly larger grains, approaching 50% of the film thickness at 700 °C. In addition, the surface roughness of HiPIMS-grown films is below 1 nm rms in the temperature range 300–500 °C which is an order of magnitude lower than that of dcMS-grown films. The results show that smooth, rutile TiO2 films can be obtained by HiPIMS at relatively low growth temperatures, without postannealing.

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