Indium tin oxide with titanium doping for transparent conductive film application on CIGS solar cells

2015 ◽  
Vol 354 ◽  
pp. 31-35 ◽  
Author(s):  
Wei-Sheng Liu ◽  
Huai-Ming Cheng ◽  
Hung-Chun Hu ◽  
Ying-Tse Li ◽  
Shi-Da Huang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Transparent Conductive Film ◽  
Titanium Doping ◽  
Conductive Film ◽  
Cigs Solar Cells

Effects of Mg Content on Zn1-xMgxO:Al Transparent Conducting Films

2008 ◽  
Vol 1101 ◽  
Author(s):  
Xiaonan Li ◽  
Hannah Ray ◽  
Craig L. Perkins ◽  
Rommel Noufi
Keyword(s):  
Solar Cells ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Optical Bandgap ◽  
Zno Films ◽  
Copper Indium Gallium Diselenide ◽  
Conduction Band Offset ◽  
Cigs Solar Cells ◽  
Photovoltaic Solar Cells ◽  
Mg Content

AbstractConductive zinc oxide (ZnO) films are used extensively as transparent electrodes in thin-film photovoltaic solar cells. Compared with the widely used indium tin oxide (ITO) and tin oxide (SnO2), ZnO has a smaller optical bandgap. ZnO is commonly used as a front contact for copper indium gallium diselenide (CIGS) solar cells, but it forms a small, unfavorable conduction-band offset with the CdS layer. The optical bandgap of ZnO could easily be engineering by alloying with MgO or CdO. In this work, we try to optimize the ZnO for CIGS solar cells. The optical and electrical properties of Zn1-xMgxO:Al films fabricated by co-sputtering were studied. Two targets: ZnO:Al and MgO, were used. The ratio of ZnO/MgO was varied continuously on the 6”x6” glass substrate, and the effects of composition on the properties of the Zn1-xMgxO:Al films were investigated. The carrier concentration and mobility of the Zn1-xMgxO:Al films decreased quickly with increasing Mg content. However, the optical properties of the Zn1-xMgxO:Al films do not vary linearly with Mg content, as reported by most papers. The observed optical bandgap of Zn1-xMgxO:Al films is actually first narrowed, then increased with the Mg content. The shift in optical bandgap from narrow to wide occurs at around a composition of x = 0.07. After the point of x = 0.07, the bandgap width star increase but film sheet resistance already too low. Our result therefore suggests that the alloyed Zn1-xMgxO:Al does not benefit the CIGS solar cell.

Flexibility of the Indium Tin Oxide Transparent Conductive Film Deposited Onto the Plastic Substrate

Smart Science ◽  
2014 ◽  
Vol 2 (1) ◽  
pp. 7-12 ◽  
Author(s):  
Shao-Kai Lu ◽  
Ji-Ting Huang ◽  
Tsung-Hsin Lee ◽  
Jyun-Jie Wang ◽  
Day-Shan Liu
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Plastic Substrate ◽  
Transparent Conductive Film ◽  
Conductive Film

Carbon nanotube/indium tin oxide hybrid transparent conductive film: Effect of nanotube diameter

2015 ◽  
Vol 132 ◽  
pp. 418-424 ◽  
Author(s):  
Mohammad Reza Golobostanfard ◽  
Hossein Abdizadeh ◽  
Saeed Mohammadi ◽  
Mohammad Amin Baghchesara
Keyword(s):  
Carbon Nanotube ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Transparent Conductive Film ◽  
Conductive Film

scholarly journals Improving Performance of CIGS Solar Cells by Annealing ITO Thin Films Electrodes

2015 ◽  
Vol 2015 ◽  
pp. 1-8 ◽  
Author(s):  
Chuan Lung Chuang ◽  
Ming Wei Chang ◽  
Nien Po Chen ◽  
Chung Chiang Pan ◽  
Chung Ping Liu
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Solar Cells ◽  
Indium Tin Oxide ◽  
Copper Indium Gallium Diselenide ◽  
Glass Substrates ◽  
Ito Film ◽  
Ito Thin Films ◽  
Cigs Solar Cells ◽  
Ito Films

Indium tin oxide (ITO) thin films were grown on glass substrates by direct current (DC) reactive magnetron sputtering at room temperature. Annealing at the optimal temperature can considerably improve the composition, structure, optical properties, and electrical properties of the ITO film. An ITO sample with a favorable crystalline structure was obtained by annealing in fixed oxygen/argon ratio of 0.03 at 400°C for 30 min. The carrier concentration, mobility, resistivity, band gap, transmission in the visible-light region, and transmission in the near-IR regions of the ITO sample were-1.6E+20 cm−3,2.7E+01 cm2/Vs,1.4E-03 Ohm-cm, 3.2 eV, 89.1%, and 94.7%, respectively. Thus, annealing improved the average transmissions (400–1200 nm) of the ITO film by 16.36%. Moreover, annealing a copper-indium-gallium-diselenide (CIGS) solar cell at 400°C for 30 min in air improved its efficiency by 18.75%. The characteristics of annealing ITO films importantly affect the structural, morphological, electrical, and optical properties of ITO films that are used in solar cells.

scholarly journals Moisture-Assisted Formation of High-Quality Silver Nanowire Transparent Conductive Films with Low Junction Resistance

Coatings ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 671
Author(s):  
Lipeng Zhou ◽  
Yuehui Hu ◽  
Hao Gao ◽  
Youliang Gao ◽  
Wenjun Zhu ◽  
...  
Keyword(s):  
Indium Tin Oxide ◽  
Capillary Condensation ◽  
Silver Nanowire ◽  
Environmental Stability ◽  
Bending Test ◽  
Commercial Application ◽  
Junction Resistance ◽  
Transparent Conductive Film ◽  
Conductive Film ◽  
Mechanical Bending

Silver nanowire (AgNWs) transparent conductive film (TCF) is considered to be the most favorable material to replace indium tin oxide (ITO) as the next-generation transparent conductive film. However, the disadvantages of AgNWs, such as easy oxidation and high wire-wire junction resistance, dramatically limit its commercial application. In this paper, moisture treatment was adopted, and water was dripped on the surface of AgNWs film or breathed on the surface so that the surface was covered with a layer of water vapor. The morphology of silver nanowire mesh nodes is complex, and the curvature is large. According to the capillary condensation theory, water molecules preferentially condense near the geometric surface with significant curvature. The capillary force is generated, making the wire-wire junction of AgNWs mesh bond tightly, resulting in good ohmic contact. The experimental results show that AgNWs-TCF treated by moisture has better conductivity, with an average sheet resistance of 20 Ω/sq and more uniform electrical properties. The bending test and adhesion test showed that AgNWs-TCF treated by moisture still exhibited good mechanical bending resistance and environmental stability.

Ag Doped Zinc Tin Oxide as Cathode for Organic Photovoltaic Cells

2012 ◽  
Vol 209-211 ◽  
pp. 1719-1722
Author(s):  
Ming Guo Zhang ◽  
Nan Hai Sun
Keyword(s):  
Solar Cells ◽  
Tin Oxide ◽  
Organic Solar Cells ◽  
Indium Tin Oxide ◽  
Bulk Heterojunction ◽  
Indium Tin Oxide Electrode ◽  
Heterojunction Solar Cells ◽  
Visible Part ◽  
Cell Architecture ◽  
Zinc Tin Oxide

A thin Ag layer embedded between layers of zinc tin oxide (ZTO) are compared to cells using an indium tin oxide electrode was investigated for inverted organic bulk heterojunction solar cells employing a multilayer electrode. ZTO/Ag/ ZTO (ZAZ) electrode is the preparation at room temperature, a high transparency in the visible part of the spectrum, and a very low sheet resistance comparable to treated ITO without the need for any thermal post deposition treatment as it is necessary for ITO. The In-free ZAZ electrodes exhibit a favorable work function of 4.3 eV and are shown to allow for excellent electron extraction even without a further interlayer. This renders ZAZ a perfectly suited bottom electrode for inverted organic solar cells with simplified cell architecture.

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