Characterization of HfO N thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas

2015 ◽  
Vol 349 ◽  
pp. 757-762 ◽  
Author(s):  
Young Bok Lee ◽  
Il-Kwon Oh ◽  
Edward Namkyu Cho ◽  
Pyung Moon ◽  
Hyungjun Kim ◽  
...  
2012 ◽  
Vol 112 (11) ◽  
pp. 113517 ◽  
Author(s):  
K. Roodenko ◽  
S. K. Park ◽  
J. Kwon ◽  
L. Wielunski ◽  
Y. J. Chabal

2011 ◽  
Vol 11 (2) ◽  
pp. 1577-1580 ◽  
Author(s):  
Yong Jun Park ◽  
Dong Ryeol Lee ◽  
Hyun Hwi Lee ◽  
Han-Bo-Ram Lee ◽  
Hyungjun Kim ◽  
...  

2015 ◽  
Vol 815 ◽  
pp. 8-13
Author(s):  
Chun Min Zhang ◽  
Xiao Yong Liu ◽  
Lin Qing Zhang ◽  
Hong Liang Lu ◽  
Peng Fei Wang ◽  
...  

A novel Ru thin film formation method was proposed to deposit metallic Ru thin films on TiN substrate for future backend of line process in semiconductor technologies. RuO2 thin films were first grown on TiN substrate by oxygen plasma-enhanced atomic layer deposition technique. The deposited RuO2 thin films were then reduced into metallic Ru thin films by H2/N2-assisted annealing.


2014 ◽  
Vol 116 (2) ◽  
pp. 663-669 ◽  
Author(s):  
Jian Zhang ◽  
Hui Yang ◽  
Qilong Zhang ◽  
Hao Jiang ◽  
Jikui Luo ◽  
...  

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