Enhanced pH sensitivity of AlGaN/GaN ion-sensitive field effect transistor with Al2O3 synthesized by atomic layer deposition

The pH sensing electrochemical characteristics of a thin-layer hafnium oxide field-effect transistor formed by atomic layer deposition

Instrumentation et Interdisciplinarité ◽

10.1051/978-2-7598-1206-6-044 ◽

2020 ◽

pp. 351-358

Author(s):

Michael Lee ◽

Abdoullatif Baraket ◽

Nadia Zine ◽

Miguel Zabala ◽

Francesca Campabadal ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Thin Layer ◽

Hafnium Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Atomic Layer ◽

Electrochemical Characteristics ◽

Ph Sensing ◽

Layer Deposition ◽

Fabrication Characteristics of Al2O3 pH-Ion Sensitive Field Effect Transistor Fabricated Using Atomic Layer Deposition and Sputter

Sensor Letters ◽

10.1166/sl.2011.1407 ◽

2011 ◽

Vol 9 (1) ◽

pp. 3-6 ◽

Cited By ~ 6

Author(s):

Sang-Kwon Lee ◽

Young-Soo Sohn ◽

Sie-Young Choi

Keyword(s):

Atomic Layer Deposition ◽

Field Effect ◽

Field Effect Transistor ◽

Atomic Layer ◽

Layer Deposition ◽

GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition

Applied Physics Letters ◽

10.1063/1.1590743 ◽

2003 ◽

Vol 83 (1) ◽

pp. 180-182 ◽

Cited By ~ 250

Author(s):

P. D. Ye ◽

G. D. Wilk ◽

B. Yang ◽

J. Kwo ◽

S. N. G. Chu ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Atomic Layer ◽

Oxide Semiconductor ◽

Layer Deposition ◽

Characterization of Hf1-xZrxO2Gate Dielectrics with 0≤x≤1 Prepared by Atomic Layer Deposition for Metal Oxide Semiconductor Field Effect Transistor Applications

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.011101 ◽

2012 ◽

Vol 51 (1R) ◽

pp. 011101

Author(s):

Chen-Kuo Chiang ◽

Chien-Hung Wu ◽

Chin-Chien Liu ◽

Jin-Fu Lin ◽

Chien-Lun Yang ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Atomic Layer ◽

Oxide Semiconductor ◽

Layer Deposition ◽

Atomic-Layer-Deposition HfO2-Based InP n-Channel Metal-Oxide-Semiconductor Field Effect Transistor Using Different Thicknesses of Al2O3 as Interfacial Passivation Layer

ECS Transactions ◽

10.1149/1.3481638 ◽

2019 ◽

Vol 33 (3) ◽

pp. 487-493 ◽

Cited By ~ 5

Author(s):

Yanzhen Wang ◽

Han Zhao ◽

Yen-Ting Chen ◽

Fei Xue ◽

Fei Zhou ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Atomic Layer ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Layer Deposition ◽

Characterization of Hf$_{1-x}$Zr$_{x}$O$_{2}$ Gate Dielectrics with $0\leq x\leq 1$ Prepared by Atomic Layer Deposition for Metal Oxide Semiconductor Field Effect Transistor Applications

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.011101 ◽

2011 ◽

Vol 51 (1) ◽

pp. 011101 ◽

Cited By ~ 2

Author(s):

Chen-Kuo Chiang ◽

Chien-Hung Wu ◽

Chin-Chien Liu ◽

Jin-Fu Lin ◽

Chien-Lun Yang ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectrics ◽

Atomic Layer ◽

Oxide Semiconductor ◽

Layer Deposition ◽

Improvement of GaAs metal–semiconductor field-effect transistor drain–source breakdown voltage by oxide surface passivation grown by atomic layer deposition

Solid-State Electronics ◽

10.1016/j.sse.2005.01.010 ◽

2005 ◽

Vol 49 (5) ◽

pp. 790-794 ◽

Cited By ~ 22

Author(s):

P.D. Ye ◽

G.D. Wilk ◽

B. Yang ◽

S.N.G. Chu ◽

K.K. Ng ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Breakdown Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Surface Passivation ◽

Atomic Layer ◽

Oxide Surface ◽

Layer Deposition ◽

The pH sensing electrochemical characteristics of a thin-layer hafnium oxide field-effect transistor formed by atomic layer deposition

Instrumentation et Interdisciplinarité ◽

10.1051/978-2-7598-1206-6.c044 ◽

2020 ◽

pp. 351-358

Author(s):

Michael Lee ◽

Abdoullatif Baraket ◽

Nadia Zine ◽

Miguel Zabala ◽

Francesca Campabadal ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Thin Layer ◽

Hafnium Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Atomic Layer ◽

Electrochemical Characteristics ◽

Ph Sensing ◽

Layer Deposition ◽

Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition

Applied Physics Letters ◽

10.1063/1.1641527 ◽

2004 ◽

Vol 84 (3) ◽

pp. 434-436 ◽

Cited By ~ 125

Author(s):

P. D. Ye ◽

G. D. Wilk ◽

B. Yang ◽

J. Kwo ◽

H.-J. L. Gossmann ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Atomic Layer ◽

Oxide Semiconductor ◽

Layer Deposition ◽

Investigation of Thermal Stability of TiN Film Formed by Atomic Layer Deposition Using Tetrakis(dimethylamino)titanium Precursor for Metal-Gate Metal–Oxide–Semiconductor Field-Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.04da16 ◽

2010 ◽

Vol 49 (4) ◽

pp. 04DA16 ◽

Cited By ~ 7

Author(s):

Tetsuro Hayashida ◽

Kazuhiko Endo ◽

Yongxun Liu ◽

Takahiro Kamei ◽

Takashi Matsukawa ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Atomic Layer ◽

Oxide Semiconductor ◽

Metal Gate ◽

Tin Film ◽

Layer Deposition ◽

Effect Transistor ◽

Thermal Stability Of