Chemical modification, field effect transistors and voltage-driven spin logic gates of tailored monolayer MoS2 nanoflakes

This paper presents simulation of spatial wavefunction switched (SWS) field-effect transistors (FETs) comprising of two vertically stacked quantum dot channels. An analog behavior model (ABM) was used to compare the experimental I-V characteristics of a fabricated QD-SWS-FET. Each channel consists of two quantum dot layers and are connected to the dedicated drains D2 and D1, respectively. The fabricated SWS-FET has one source and one gate. The ABM simulation models SWS-FET comprising of two independent conventional BSIM FETs with their (W/L) ratios, capacitances and other device parameters. The agreement in simulation and experimental data will advance modeling of SWS based adders, logic gates and SRAMs.

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Field-effect Transistors, Amplifiers and Logic Gates

Semiconductor Devices ◽

10.1007/978-1-349-15671-9_5 ◽

1976 ◽

pp. 91-118

Author(s):

Noel M. Morris

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Logic Gates

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Direct observation of the hysteretic Fermi level modulation in monolayer MoS2 field effect transistors

Current Applied Physics ◽

10.1016/j.cap.2019.11.021 ◽

2020 ◽

Vol 20 (2) ◽

pp. 298-303

Author(s):

Yuhang Wang ◽

Dongyong Li ◽

Xubo Lai ◽

Boyang Liu ◽

Yibao Chen ◽

...

Keyword(s):

Fermi Level ◽

Direct Observation ◽

Field Effect ◽

Field Effect Transistors ◽

Monolayer Mos2

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Organic Field-Effect Transistors and Unipolar Logic Gates on Charged Electrets from Spin-On Organosilsesquioxane Resins

Advanced Functional Materials ◽

10.1002/adfm.200600690 ◽

2007 ◽

Vol 17 (1) ◽

pp. 142-153 ◽

Cited By ~ 59

Author(s):

C. Huang ◽

J. E. West ◽

H. E. Katz

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Logic Gates ◽

Organic Field Effect Transistors

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Flexible Complementary Logic Gates Using Inkjet-Printed Polymer Field-Effect Transistors

IEEE Electron Device Letters ◽

10.1109/led.2012.2226556 ◽

2013 ◽

Vol 34 (1) ◽

pp. 126-128 ◽

Cited By ~ 32

Author(s):

Kang-Jun Baeg ◽

Dongyoon Khim ◽

Juhwan Kim ◽

Dong-Yu Kim ◽

Si-Woo Sung ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Logic Gates

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Monolayer MoS2 field-effect transistors patterned by photolithography for active matrix pixels in organic light-emitting diodes

npj 2D Materials and Applications ◽

10.1038/s41699-019-0091-9 ◽

2019 ◽

Vol 3 (1) ◽

Cited By ~ 6

Author(s):

Hyeokjae Kwon ◽

Sourav Garg ◽

Ji Hoon Park ◽

Yeonsu Jeong ◽

Sanghyuck Yu ◽

...

Keyword(s):

Field Effect ◽

Light Emitting Diodes ◽

Field Effect Transistors ◽

Organic Light Emitting Diodes ◽

Monolayer Mos2 ◽

Active Matrix ◽

Light Emitting ◽

Organic Light

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Synergistic additive-mediated CVD growth and chemical modification of 2D materials

Chemical Society Reviews ◽

10.1039/c9cs00348g ◽

2019 ◽

Vol 48 (17) ◽

pp. 4639-4654 ◽

Cited By ~ 22

Author(s):

Jizhou Jiang ◽

Neng Li ◽

Jing Zou ◽

Xing Zhou ◽

Goki Eda ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Chemical Modification ◽

Performance Improvement ◽

Vapor Deposition ◽

Field Effect ◽

Field Effect Transistors ◽

2D Materials ◽

Chemical Vapor ◽

Cvd Growth

This review summarizes significant advances in the use of typical synergistic additives in growth of 2D materials with chemical vapor deposition, and the corresponding performance improvement of field effect transistors and photodetectors.

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