Investigation of the electronic structure of two-dimensional GaN/Zr2CO2 hetero-junction: Type-II band alignment with tunable bandgap

2021 ◽  
Vol 542 ◽  
pp. 148505
Author(s):  
Xue Ting Zhu ◽  
Ying Xu ◽  
Yong Cao ◽  
Yu Qing Zhao ◽  
Wei Sheng ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Band Alignment ◽  
Type Ii ◽  
Two Dimensional ◽  
Tunable Bandgap ◽  
Junction Type

Toward lateral heterostructures with two-dimensional MoX2H2 (X = As, Sb)

2020 ◽  
Vol 22 (39) ◽  
pp. 22584-22590
Author(s):  
Ruishan Tan ◽  
Yanzi Lei ◽  
Luyan Li ◽  
Shuhua Shi
Keyword(s):  
Band Alignment ◽  
Type Ii ◽  
Two Dimensional ◽  
Bandgap Engineering ◽  
Tunable Bandgap

Lateral heterostructures with 2D MoX2H2 enable tunable bandgap engineering and type-II band alignment.

SPACE-CHARGE SPECTROSCOPY OF ELECTRONIC STATES IN Ge/Si QUANTUM DOTS WITH TYPE-II BAND ALIGNMENT

2007 ◽  
Vol 06 (05) ◽  
pp. 353-356
Author(s):  
A. I. YAKIMOV ◽  
A. V. DVURECHENSKII ◽  
A. I. NIKIFOROV ◽  
A. A. BLOSHKIN
Keyword(s):  
Quantum Dots ◽  
Electronic Structure ◽  
Binding Energy ◽  
Space Charge ◽  
Tensile Strain ◽  
Electronic States ◽  
Band Alignment ◽  
Type Ii ◽  
Electron Confinement ◽  
Si Quantum Dots

Space-charge spectroscopy was employed to study electronic structure in a stack of four layers of Ge quantum dots coherently embedded in an n-type Si (001) matrix. Evidence for an electron confinement in the vicinity of Ge dots was found. From the frequency-dependent measurements the electron binding energy was determined to be ~50 meV, which is consistent with the results of numerical analysis. The data are explained by a modification of the conduction band alignment induced by inhomogeneous tensile strain in Si around the buried Ge dots.

Tunable type-II band alignment and electronic structure of C3N4/MoSi2N4 heterostructure: Interlayer coupling and electric field

2022 ◽  
Vol 105 (4) ◽  
Author(s):  
Cuong Q. Nguyen ◽  
Yee Sin Ang ◽  
Son-Tung Nguyen ◽  
Nguyen V. Hoang ◽  
Nguyen Manh Hung ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Electric Field ◽  
Interlayer Coupling ◽  
Band Alignment ◽  
Type Ii

Highly-efficient heterojunction solar cells based on two-dimensional tellurene and transition metal dichalcogenides

2019 ◽  
Vol 7 (13) ◽  
pp. 7430-7436 ◽  
Author(s):  
Kai Wu ◽  
Huanhuan Ma ◽  
Yunzhi Gao ◽  
Wei Hu ◽  
Jinlong Yang
Keyword(s):  
Solar Cells ◽  
Transition Metal ◽  
Charge Separation ◽  
Transition Metal Dichalcogenides ◽  
Band Alignment ◽  
Type Ii ◽  
Two Dimensional ◽  
Heterojunction Solar Cells ◽  
Highly Efficient ◽  
Metal Dichalcogenides

Tellurene and TMDs show desirable type II band alignment for constructing highly-efficient heterojunction solar cells with strong charge separation and enhanced sunlight absorption.

Two-dimensional type-II g-C3N4/SiP–GaS heterojunctions as water splitting photocatalysts: first-principles predictions

2020 ◽  
Vol 22 (27) ◽  
pp. 15649-15657 ◽  
Author(s):  
Lei Hu ◽  
Wencai Yi ◽  
Tongde Rao ◽  
Jianting Tang ◽  
Chuanbo Hu ◽  
...  
Keyword(s):  
Visible Light ◽  
Water Splitting ◽  
First Principles ◽  
Band Alignment ◽  
Type Ii ◽  
Two Dimensional ◽  
Visible Light Driven

The g-C3N4/SiP-α, -β and -γ heterojunctions are all visible-light-driven water splitting photocatalysts with a type-II band alignment.

In-plane interfacing effects of two-dimensional transition-metal dichalcogenide heterostructures

2016 ◽  
Vol 18 (23) ◽  
pp. 15632-15638 ◽  
Author(s):  
Wei Wei ◽  
Ying Dai ◽  
Baibiao Huang
Keyword(s):  
Transition Metal ◽  
Electric Field ◽  
Band Alignment ◽  
Transition Metal Dichalcogenide ◽  
Type Ii ◽  
Two Dimensional ◽  
Defect States ◽  
True Type

Two-dimensional TMD in-plane heterostructures demonstrate true type-II band alignment and the built-in electric field makes the defect states consecutive.

A theoretical study on the electronic properties of in-plane CdS/ZnSe heterostructures: type-II band alignment for water splitting

2018 ◽  
Vol 6 (9) ◽  
pp. 4161-4166 ◽  
Author(s):  
Hongchao Yang ◽  
Jinjin Li ◽  
Lin Yu ◽  
Baibiao Huang ◽  
Yandong Ma ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Water Splitting ◽  
Materials Science ◽  
Theoretical Study ◽  
Building Blocks ◽  
Band Alignment ◽  
Device Physics ◽  
Type Ii ◽  
Two Dimensional

Lateral heterostructures fabricated by using two-dimensional (2D) building blocks have attracted a great deal of attention in materials science and device physics.

Strain and electric field modulated electronic structure of two-dimensional SiP(SiAs)/GeS van der Waals heterostructures

2019 ◽  
Vol 7 (34) ◽  
pp. 10491-10497 ◽  
Author(s):  
Yingmei Zhu ◽  
Xiaocha Wang ◽  
Wenbo Mi
Keyword(s):  
Electronic Structure ◽  
Electric Field ◽  
Van Der Waals ◽  
Type Ii ◽  
Two Dimensional ◽  
Van Der Waals Heterostructures ◽  
P Type

Type-II alignment appears in the SiP(SiAs)/GeS heterostructures, which can be tuned by strain and an electric field.

scholarly journals Electronic and photocatalytic properties of two-dimensional boron phosphide/SiC van der Waals heterostructure with direct type-II band alignment: a first principles study

RSC Advances ◽  
2020 ◽  
Vol 10 (53) ◽  
pp. 32027-32033
Author(s):  
Thi-Nga Do ◽  
M. Idrees ◽  
Bin Amin ◽  
Nguyen N. Hieu ◽  
Huynh V. Phuc ◽  
...  
Keyword(s):  
First Principles ◽  
Density Functional ◽  
Van Der Waals ◽  
Band Alignment ◽  
Photocatalytic Properties ◽  
Type Ii ◽  
Two Dimensional ◽  
Functional Theory ◽  
Boron Phosphide ◽  
Van Der Waals Heterostructure

We investigate the structural, electronic, optical and photocatalytic properties of boron phosphide and SiC monolayers and their corresponding van der Waals heterostructure by density functional theory.

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