Realization of preferential (100) oriented AlN thin films on Mo coated Si substrate using reactive RF magnetron sputtering

2021 ◽  
pp. 149308
Author(s):  
Amal Das ◽  
Martando Rath ◽  
Deleep R. Nair ◽  
M.S. Ramachandra Rao ◽  
Amitava DasGupta
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Si Substrate ◽  
Reactive Rf Magnetron Sputtering

Cu/TiO2 thin films prepared by reactive RF magnetron sputtering

2015 ◽  
Vol 120 (2) ◽  
pp. 765-773 ◽  
Author(s):  
M. Sreedhar ◽  
I. Neelakanta Reddy ◽  
Parthasarathi Bera ◽  
D. Ramachandran ◽  
K. Gobi Saravanan ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Tio2 Thin Films ◽  
Reactive Rf Magnetron Sputtering

Characterization of Mis Capacitor of Bst Thin Films Deposited on Si by Rf Magnetron Sputtering

1996 ◽  
Vol 433 ◽  
Author(s):  
S.H. Paek ◽  
C.S. Park ◽  
J.H. Won ◽  
K.S. Lee
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Leakage Current ◽  
Oxygen Concentration ◽  
Rf Magnetron Sputtering ◽  
Si Substrate ◽  
Bst Thin Films ◽  
Mis Capacitor ◽  
High Dielectric ◽  
Mis Capacitors

AbstractThe application of high dielectric (Ba, Sr)TiO3 [BST] thin films for Metal-Insulator- Semiconductor(MIS) capacitors was investigated. BST thin films were deposited on p-Si(100) substrates by the RF magnetron sputtering with temperature range of 500–600 °C. We examined the characteristics of MIS capacitor with various oxygen pressure, substrate temperature and (Ba+Sr)/Ti ratio. The dielectric properties of MIS capacitors consisting of AI/BST/SiO2/Si sandwich structure were measured for various conditions. The charge state densities of the MIS capacitors were determined by high frequency (1 MHz) C-V measurement. Also, current-voltage characteristics of the MIS capacitor were investigated. In order to reduce the leakage current in MIS capacitor, high quality SiO2 layer was grown on bare p-Si substrate by thermal oxidation. By applying SiO2 layer between BST thin films and Si substrate, low leakage current of 10−10 order was observed. Futhermore, the leakage current showed the dependence on the oxygen concentration in plasma gas and the (Ba+Sr)/Ti ratio. Also, the BST MIS structure showed relatively high capacitance even though it is the combination of high-dielectric BST thin films and SiO2 layer. By C-V measurement, the polarity of effective oxide charge changed with the oxygen concentration in plasma gas and (Ba+Sr)/Ti ratio of sputtering target.

Nanostructure of ZnO thin films prepared by reactive rf magnetron sputtering

1998 ◽  
Vol 318 (1-2) ◽  
pp. 117-119 ◽  
Author(s):  
O. Takai ◽  
M. Futsuhara ◽  
G. Shimizu ◽  
C.P. Lungu ◽  
J. Nozue
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Reactive Rf Magnetron Sputtering
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