Using AMPS-1D program package, graded band-gap PIN nc-Si Thin-film Solar Cells is simulated. The results show that the graded band gap of intrinsic layer not only enhances the absorption of sunlight but also promote the collection of the photo-generated carriers. The increasing graded band gap PIN nc-Si thin-film solar cells with high efficiency of 14.743% and fill factor of 0.775 is superior to general solar cells designed in our previous work.
Fabrication and characterization of Al2O3 /Si composite nanodome structures for high efficiency crystalline Si thin film solar cells