Fabrication of rough Al doped ZnO films deposited by low pressure chemical vapor deposition for high efficiency thin film solar cells

2010 ◽  
Vol 10 (3) ◽  
pp. S459-S462 ◽  
Author(s):  
Doyoung Kim ◽  
Ilgu Yun ◽  
Hyungjun Kim
2013 ◽  
Vol 113 (2) ◽  
pp. 024908 ◽  
Author(s):  
Daniel Messerschmidt ◽  
Sylvain Nicolay ◽  
Laura Ding ◽  
Gregory Bugnon ◽  
Fanny Meillaud ◽  
...  

2006 ◽  
Vol 45 (4B) ◽  
pp. 3516-3518 ◽  
Author(s):  
Shui-Yang Lien ◽  
Dong-Sing Wuu ◽  
Hsin-Yuan Mao ◽  
Bing-Rui Wu ◽  
Yen-Chia Lin ◽  
...  

Solar Cells ◽  
1985 ◽  
Vol 14 (3) ◽  
pp. 289-291 ◽  
Author(s):  
B.J. Stanbery ◽  
W.S. Chen ◽  
R.A. Mickelsen ◽  
G.J. Collins ◽  
K.A. Emery ◽  
...  

2006 ◽  
Vol 928 ◽  
Author(s):  
Jerome Steinhauser ◽  
Sylvie Faÿ ◽  
Romain Schlüchter ◽  
Seung Yeop Myong ◽  
Evelyne Vallat ◽  
...  

ABSTRACTBoron-doped zinc oxide (ZnO) films deposited by Low-Pressure Chemical Vapor Deposition (LPCVD) technique are used as Transparent Conductive Oxide (TCO) to contact thin-film silicon solar cells. In this paper, the effect of boron introduced as dopant during ZnO formation is studied. These films are highly transparent in the visible range, whereas in the near infrared region their transmittance decreases with the increase of boron content due to free carrier absorption (FCA). A shifting of the fondamental band gap is also observed. The resistivity decreases of about one order of magnitude with the increase of the doping ratio ([B2H6]/[DEZ]) from 0 to 2. This resistivity drop is mainly due to an increase of the free carrier concentration. In low doped samples, Hall mobility increases with grain size, whereas it shows no grain size dependence in highly doped layers. This suggest that the scattering by grain-boundary is the main limiting factor for transport in low doped ZnO samples, whereas in highly doped ZnO films transport is controlled by the ionized impurity scattering within the grains.


2014 ◽  
Vol 2014 ◽  
pp. 1-5
Author(s):  
Hsin-Ying Lee ◽  
Ting-Chun Wang ◽  
Chun-Yen Tseng

The microcrystalline p-SiC/i-Si/n-Si thin film solar cells treated with hydrogen plasma were fabricated at low temperature using a CO2laser-assisted plasma enhanced chemical vapor deposition (LAPECVD) system. According to the micro-Raman results, the i-Si films shifted from 482 cm−1to 512 cm−1as the assisting laser power increased from 0 W to 80 W, which indicated a gradual transformation from amorphous to crystalline Si. From X-ray diffraction (XRD) results, the microcrystalline i-Si films with (111), (220), and (311) diffraction were obtained. Compared with the Si-based thin film solar cells deposited without laser assistance, the short-circuit current density and the power conversion efficiency of the solar cells with assisting laser power of 80 W were improved from 14.38 mA/cm2to 18.16 mA/cm2and from 6.89% to 8.58%, respectively.


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