Temperature dependence of ferroelectric property and leakage mechanism in Mn-doped Pb(Zr0.3Ti0.7)O3 films

2021 ◽  
Author(s):  
Wenping Geng ◽  
Xiaojun Qiao ◽  
Caiqin Zhao ◽  
Dongwan Zheng ◽  
Yaqing Li ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Ferroelectric Property ◽  
Leakage Mechanism ◽  
Mn Doped

Deposition-temperature dependence of structure, ferroelectric property and conduction mechanism of BCZT epitaxial films

2021 ◽  
Vol 47 (3) ◽  
pp. 3195-3200
Author(s):  
Xiang Ji ◽  
Chuanbin Wang ◽  
Takashi Harumoto ◽  
Yongshang Tian ◽  
Song Zhang ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Ferroelectric Property ◽  
Deposition Temperature ◽  
Conduction Mechanism ◽  
Epitaxial Films

Temperature Dependence of Metal-Insulator Transition in Mn-Doped p-Type GaAs

2007 ◽  
Vol 50 (3) ◽  
pp. 844 ◽  
Author(s):  
Sungyoul Choi ◽  
Bong-Jun Kim ◽  
Yong-Wook Lee ◽  
Hyun-Tak Kim ◽  
Jeongyong Choi ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
P Type ◽  
Mn Doped

Temperature Dependence of the Band-Edge Photoluminescence of Mn-Doped ZnO Ceramics

2008 ◽  
Vol 53 (1) ◽  
pp. 392-395
Author(s):  
Younhun Hwang ◽  
Youngho Um ◽  
Sunglae Cho
Keyword(s):  
Temperature Dependence ◽  
Band Edge ◽  
Doped Zno ◽  
Mn Doped ◽  
Zno Ceramics

THE THERMODYNAMIC, TRANSPORT AND MAGNETOTRANSPORT PROPERTIES OF Mn-DOPED GaAs/InGaAs/GaAs QUANTUM WELL WITH FERROMAGNETISM

2009 ◽  
Vol 23 (17) ◽  
pp. 3596-3601 ◽  
Author(s):  
LJUDMILA SHCHUROVA ◽  
VLADIMIR KULBACHINSKII
Keyword(s):  
Magnetic Field ◽  
Quantum Well ◽  
Temperature Dependence ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Charge Carriers ◽  
Free Charge ◽  
Diluted Magnetic ◽  
Mn Doped ◽  
The Magnetic Field

We have investigated the thermodynamic, transport and magnetotransport properties of free charge carriers in a diluted magnetic semiconductor with a quantum well In0.17Ga0.83As in GaAs with δ-doped by C and Mn. In order to determine the density of the holes in a quantum well, we carried out thermodynamic calculations of the system of free holes, atoms Mn0 and ions Mn-. We calculated the temperature dependence of resistance and magnetoresistance of holes in the quantum well. The contributions of various scattering mechanisms of holes to the resistance were analyzed. The negative magnetoresistance are explained as the reduction of spin-flip scattering by aligning spins of the magnetic field.

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