Enhanced thickness uniformity of large-scale α-Ga2O3 epilayers grown by vertical hot-wall mist chemical vapor deposition

Author(s):  
Sun-Young Park ◽  
Minh-Tan Ha ◽  
Kyoung-Ho Kim ◽  
Le Van Lich ◽  
Yun-Ji Shin ◽  
...  
2010 ◽  
Vol 133 (3) ◽  
Author(s):  
Myung Gwan Hahm ◽  
Young-Kyun Kwon ◽  
Ahmed Busnaina ◽  
Yung Joon Jung

Due to their unique one-dimensional nanostructure along with excellent mechanical, electrical, and optical properties, carbon nanotubes (CNTs) become a promising material for diverse nanotechnology applications. However, large-scale and structure controlled synthesis of CNTs still have many difficulties due to the lack of understanding of the fundamental growth mechanism of CNTs, as well as the difficulty of controlling atomic-scale physical and chemical reactions during the nanotube growth process. Especially, controlling the number of graphene wall, diameter, and chirality of CNTs are the most important issues that need to be solved to harness the full potential of CNTs. Here we report the large-scale selective synthesis of vertically aligned single walled carbon nanotubes (SWNTs) and double walled carbon nanotubes (DWNTs) by controlling the size of catalyst nanoparticles in the highly effective oxygen assisted thermal chemical vapor deposition (CVD) process. We also demonstrate a simple but powerful strategy for synthesizing ultrahigh density and diameter selected vertically aligned SWNTs through the precise control of carbon flow during a thermal CVD process.


2020 ◽  
Vol 709 ◽  
pp. 138225
Author(s):  
Derya Ataç ◽  
Johnny G.M. Sanderink ◽  
Sachin Kinge ◽  
Dirk J. Gravesteijn ◽  
Alexey Y. Kovalgin ◽  
...  

ACS Nano ◽  
2020 ◽  
Vol 14 (11) ◽  
pp. 15605-15615
Author(s):  
Yangguang Zhong ◽  
Kun Liao ◽  
Wenna Du ◽  
Jiangrui Zhu ◽  
Qiuyu Shang ◽  
...  

2005 ◽  
Vol 77 (2) ◽  
pp. 391-398 ◽  
Author(s):  
Kosuke Takenaka ◽  
Masaharu Shiratani ◽  
Manabu Takeshita ◽  
Makoto Kita ◽  
Kazunori Koga ◽  
...  

H-assisted plasma chemical vapor deposition (HAPCVD) realizes control of deposition profile of Cu in trenches. The key to the control is ion irradiation to surfaces. With increasing the flux and energy of ions, the profile changes from conformal to subconformal and then to an anisotropic one, for which Cu material is filled from the bottom of the trench without deposition on the sidewall. H3+ and ArH+ are identified as the major ionic species which contribute to the control, and hence the deposition profile also depends on a ratio R = H2/(Ar + H2).


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