Antiobesity and antihyperlipidemic effect of Ixora coccinea on Triton X-100 induced hyperlipidemia in rats: An approach to evaluate asymmetrical temperature distribution analysis using thermography

2019 ◽  
Vol 11 (3) ◽  
pp. 326-331 ◽  
Author(s):  
Sidhra Syed Zameer Ahmed ◽  
Syed Zameer Ahmed Khader ◽  
Krishnaveni Radhakrishnan ◽  
Vanmathi Marimuthu ◽  
Muniraj Chinnusamy ◽  
...  
Keyword(s):  
Temperature Distribution ◽  
Distribution Analysis ◽  
Triton X ◽  
Ixora Coccinea

Characterization of volcanic thermal anomalies by means of sub-pixel temperature distribution analysis

2005 ◽  
Vol 68 (7-8) ◽  
pp. 641-651 ◽  
Author(s):  
Valerio Lombardo ◽  
Maria Fabrizia Buongiorno ◽  
Stefania Amici
Keyword(s):  
Temperature Distribution ◽  
Distribution Analysis ◽  
Thermal Anomalies

Electrothermal analysis of integrated circuits: a realization by infrared thermography

2021 ◽  
Author(s):  
Farnoos Farrokhi
Keyword(s):  
Temperature Distribution ◽  
Integrated Circuits ◽  
Power Dissipation ◽  
Electronic Device ◽  
Power Measurement ◽  
Device Under Test ◽  
Distribution Analysis ◽  
Ir Thermography ◽  
Temperature Dependent ◽  
Run Time

The International Technology Roadmap for Silicon (ITRS) predicted that by the year 2016, a high-performance chip could dissipate as much as 300 W/cm² of heat. Another more noticeable thermal issue in IC's is the uneven temperature distribution. Increased power dissipation and greater temperature variation highlight the need for electrothermal analysis of electronic components. The goal of this research is to develop an experimental infrared measurement technique for the thermal and electrothermal analysis of electronic circuits. The objective of the electrothermal analysis is to represent the behavior of the temperature dependent characteristics of electronic device in near real work condition. An infrared (IR) thermography setup to perform the temperature distribution analysis and power dissipation measurement of the device under test is proposed in this reasearch. The system is based on a transparent oil heatsink which captures the thermal profile and run-time power dissipation from the device under test with a very fine degree of granularity. The proposed setup is used to perform the thermal analysis and power measurement of an Intel Dual Core E2180 processor. The power dissipation of the processor is obtained by calculating and measuring the heat transfer coefficient of the oil heatsink. Moreover, the power consumption of the processor is measured by isolating the current used by the CPU at run time. A three-dimensional fininte element thermal model is developed to simulate the thermal properties of the processor. The results obtained using this simulation is compared to the experimental results from IR thermography. A methodology to perform electrothermal analysis on integrated circuits is introduced. This method is based on coupling a standard electrical simulator, which is often used in the design process, and IR thermography system through an efficient interface program. The proposed method is capable of updating the temperature dependent parameters of device in near real time. The proposed method is applied to perform electrothermal analysis of a power MOSFET to measure the temperature distribution and the device performance. The DC characteristics of the device are investigated. The obtained results indicated that the operating point, I-V characteristics and power dissipation of the MOSFET vary significantly with temperature.

scholarly journals Temperature distribution analysis of different technologies of PV modules using infrared thermography

2018 ◽  
Vol 49 ◽  
pp. 00044 ◽  
Author(s):  
Slawomir Gulkowski ◽  
Natalia Zytkowska ◽  
Piotr Dragan
Keyword(s):  
Temperature Distribution ◽  
Infrared Thermography ◽  
Power Production ◽  
Distribution Analysis ◽  
Copper Indium Gallium Diselenide ◽  
Pv Systems ◽  
Copper Indium ◽  
Long Time ◽  
High Level ◽  
Continuous Power

Photovoltaic systems are designed to operate for a very long time according to the modules’ warranty that guarantees at least of 80% of the nominal power production after 20 years of use. In order to assure the continuous power production with a high level for a long time, thermographic analysis should be performed to detect incipient anomalies in individual modules and junction boxes. This safe, convenient and noncontact method allows carrying out the inspection for working system without any contact with live wiring and without disconnecting the PV systems. Temperature distribution of the module surface can reveal many different types of anomalies, i.e. hot spots caused by local shading, microcracking or cell breakage. This paper shows the results of the infrared thermography analysis of the operating PV systems consisting of different technological modules: polycrystalline silicon (pc-Si), copper indium gallium diselenide (CIGS) and cadmium telluride (CdTe). The average working temperature of each different kind of technological module as well as overheated areas were investigated in this study. Temperature of the MC4 connectors was also analysed.

scholarly journals Thermal distribution analysis of inner defects in TSV

2018 ◽  
Vol 38 ◽  
pp. 04026
Author(s):  
Chuan Kai Jiang ◽  
Lei Nie ◽  
Wen Jia ◽  
Yu Ning Zhong
Keyword(s):  
Thermal Analysis ◽  
Finite Element ◽  
Temperature Distribution ◽  
Temperature Variation ◽  
Finite Element Models ◽  
Distribution Analysis ◽  
Internal Defects ◽  
External Temperature ◽  
Thermal Distribution ◽  
Distinct Temperature

In order to uncover the external manifestations of TSV internal defects, the finite element models of typical internal defects, which were filling missing, axial cavity and end cavity, were established. The thermal analysis was carried out using thermoelectric coupling method. The temperature distribution of TSV with and without defects were obtained. And the temperature variation profiles on the defined paths of TSV layer were also analyzed. The analysis indicated that all the defective TSV showed distinct temperature distribution with the defect-free TSV. Among three typical defects, TSV with filling missing showed the most obvious difference on the temperature distribution and path variation. TSV with end cavity has relatively weak affect and the slightest defect was TSV with axial cavity. Therefore, it could be seen that the external temperature difference caused by the internal defects of TSV could provide effective information for the identification and detection in TSV with internal defects.

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