Electrothermal analysis of integrated circuits: a realization by infrared thermography

2021 ◽  
Author(s):  
Farnoos Farrokhi
Keyword(s):  
Temperature Distribution ◽  
Integrated Circuits ◽  
Power Dissipation ◽  
Electronic Device ◽  
Power Measurement ◽  
Device Under Test ◽  
Distribution Analysis ◽  
Ir Thermography ◽  
Temperature Dependent ◽  
Run Time

The International Technology Roadmap for Silicon (ITRS) predicted that by the year 2016, a high-performance chip could dissipate as much as 300 W/cm² of heat. Another more noticeable thermal issue in IC's is the uneven temperature distribution. Increased power dissipation and greater temperature variation highlight the need for electrothermal analysis of electronic components. The goal of this research is to develop an experimental infrared measurement technique for the thermal and electrothermal analysis of electronic circuits. The objective of the electrothermal analysis is to represent the behavior of the temperature dependent characteristics of electronic device in near real work condition. An infrared (IR) thermography setup to perform the temperature distribution analysis and power dissipation measurement of the device under test is proposed in this reasearch. The system is based on a transparent oil heatsink which captures the thermal profile and run-time power dissipation from the device under test with a very fine degree of granularity. The proposed setup is used to perform the thermal analysis and power measurement of an Intel Dual Core E2180 processor. The power dissipation of the processor is obtained by calculating and measuring the heat transfer coefficient of the oil heatsink. Moreover, the power consumption of the processor is measured by isolating the current used by the CPU at run time. A three-dimensional fininte element thermal model is developed to simulate the thermal properties of the processor. The results obtained using this simulation is compared to the experimental results from IR thermography. A methodology to perform electrothermal analysis on integrated circuits is introduced. This method is based on coupling a standard electrical simulator, which is often used in the design process, and IR thermography system through an efficient interface program. The proposed method is capable of updating the temperature dependent parameters of device in near real time. The proposed method is applied to perform electrothermal analysis of a power MOSFET to measure the temperature distribution and the device performance. The DC characteristics of the device are investigated. The obtained results indicated that the operating point, I-V characteristics and power dissipation of the MOSFET vary significantly with temperature.

scholarly journals Electrothermal analysis of integrated circuits: a realization by infrared thermography

2021 ◽  
Author(s):  
Farnoos Farrokhi
Keyword(s):  
Temperature Distribution ◽  
Integrated Circuits ◽  
Power Dissipation ◽  
Electronic Device ◽  
Power Measurement ◽  
Device Under Test ◽  
Distribution Analysis ◽  
Ir Thermography ◽  
Temperature Dependent ◽  
Run Time

The International Technology Roadmap for Silicon (ITRS) predicted that by the year 2016, a high-performance chip could dissipate as much as 300 W/cm² of heat. Another more noticeable thermal issue in IC's is the uneven temperature distribution. Increased power dissipation and greater temperature variation highlight the need for electrothermal analysis of electronic components. The goal of this research is to develop an experimental infrared measurement technique for the thermal and electrothermal analysis of electronic circuits. The objective of the electrothermal analysis is to represent the behavior of the temperature dependent characteristics of electronic device in near real work condition. An infrared (IR) thermography setup to perform the temperature distribution analysis and power dissipation measurement of the device under test is proposed in this reasearch. The system is based on a transparent oil heatsink which captures the thermal profile and run-time power dissipation from the device under test with a very fine degree of granularity. The proposed setup is used to perform the thermal analysis and power measurement of an Intel Dual Core E2180 processor. The power dissipation of the processor is obtained by calculating and measuring the heat transfer coefficient of the oil heatsink. Moreover, the power consumption of the processor is measured by isolating the current used by the CPU at run time. A three-dimensional fininte element thermal model is developed to simulate the thermal properties of the processor. The results obtained using this simulation is compared to the experimental results from IR thermography. A methodology to perform electrothermal analysis on integrated circuits is introduced. This method is based on coupling a standard electrical simulator, which is often used in the design process, and IR thermography system through an efficient interface program. The proposed method is capable of updating the temperature dependent parameters of device in near real time. The proposed method is applied to perform electrothermal analysis of a power MOSFET to measure the temperature distribution and the device performance. The DC characteristics of the device are investigated. The obtained results indicated that the operating point, I-V characteristics and power dissipation of the MOSFET vary significantly with temperature.

Low Power Pulse-Triggered Flip-Flop Based on Clock Triggering Edge Control Technique

2015 ◽  
Vol 24 (07) ◽  
pp. 1550094 ◽  
Author(s):  
Jizhong Shen ◽  
Liang Geng ◽  
Xuexiang Wu
Keyword(s):  
Integrated Circuits ◽  
Power Dissipation ◽  
Energy Efficient ◽  
Clock Cycle ◽  
Control Technique ◽  
Switching Activity ◽  
Digital Integrated Circuits ◽  
Flip Flop ◽  
Deep Impact ◽  
Power Pulse

Flip-flop is an important unit in digital integrated circuits, whose characteristics have a deep impact on the performance of the circuits. To reduce the power dissipation of flip-flops, clock triggering edge control technique is proposed, which is feasible to block one or two triggering edges of a clock cycle if they are redundant in dual-edge pulse-triggered flip-flops (DEPFFs). Based on this technique, redundant pulses can be suppressed when the input stays unchanged, and all the redundant triggerings are eliminated to reduce redundant transitions at the internal nodes of the flip-flop, so the power dissipation can be decreased. Then a novel DEPFF based on clock triggering edge control (DEPFF-CEC) technique is proposed. Based on the SMIC 65-nm technology, the post layout simulation results show that the proposed DEPFF-CEC gains an improvement of 8.03–39.83% in terms of power dissipation when the input switching activity is 10%, as compared with its counterparts. Thus, it is suitable for energy-efficient designs whose input data switching activity is low.

Characterization of volcanic thermal anomalies by means of sub-pixel temperature distribution analysis

2005 ◽  
Vol 68 (7-8) ◽  
pp. 641-651 ◽  
Author(s):  
Valerio Lombardo ◽  
Maria Fabrizia Buongiorno ◽  
Stefania Amici
Keyword(s):  
Temperature Distribution ◽  
Distribution Analysis ◽  
Thermal Anomalies

scholarly journals A Direct Method to Extract Transient Sub-Gap Density of State (DOS) Based on Dual Gate Pulse Spectroscopy

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Mingzhi Dai ◽  
Karim Khan ◽  
Shengnan Zhang ◽  
Kemin Jiang ◽  
Xingye Zhang ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Integrated Circuits ◽  
Direct Method ◽  
Temperature Dependent ◽  
Extrinsic Factors ◽  
Gate Pulse ◽  
Dual Gate ◽  
Pulse Spectroscopy ◽  
A Direct Method ◽  
Peak Value

Abstract Sub-gap density of states (DOS) is a key parameter to impact the electrical characteristics of semiconductor materials-based transistors in integrated circuits. Previously, spectroscopy methodologies for DOS extractions include the static methods, temperature dependent spectroscopy and photonic spectroscopy. However, they might involve lots of assumptions, calculations, temperature or optical impacts into the intrinsic distribution of DOS along the bandgap of the materials. A direct and simpler method is developed to extract the DOS distribution from amorphous oxide-based thin-film transistors (TFTs) based on Dual gate pulse spectroscopy (GPS), introducing less extrinsic factors such as temperature and laborious numerical mathematical analysis than conventional methods. From this direct measurement, the sub-gap DOS distribution shows a peak value on the band-gap edge and in the order of 1017–1021/(cm3·eV), which is consistent with the previous results. The results could be described with the model involving both Gaussian and exponential components. This tool is useful as a diagnostics for the electrical properties of oxide materials and this study will benefit their modeling and improvement of the electrical properties and thus broaden their applications.

scholarly journals Temperature distribution analysis of different technologies of PV modules using infrared thermography

2018 ◽  
Vol 49 ◽  
pp. 00044 ◽  
Author(s):  
Slawomir Gulkowski ◽  
Natalia Zytkowska ◽  
Piotr Dragan
Keyword(s):  
Temperature Distribution ◽  
Infrared Thermography ◽  
Power Production ◽  
Distribution Analysis ◽  
Copper Indium Gallium Diselenide ◽  
Pv Systems ◽  
Copper Indium ◽  
Long Time ◽  
High Level ◽  
Continuous Power

Photovoltaic systems are designed to operate for a very long time according to the modules’ warranty that guarantees at least of 80% of the nominal power production after 20 years of use. In order to assure the continuous power production with a high level for a long time, thermographic analysis should be performed to detect incipient anomalies in individual modules and junction boxes. This safe, convenient and noncontact method allows carrying out the inspection for working system without any contact with live wiring and without disconnecting the PV systems. Temperature distribution of the module surface can reveal many different types of anomalies, i.e. hot spots caused by local shading, microcracking or cell breakage. This paper shows the results of the infrared thermography analysis of the operating PV systems consisting of different technological modules: polycrystalline silicon (pc-Si), copper indium gallium diselenide (CIGS) and cadmium telluride (CdTe). The average working temperature of each different kind of technological module as well as overheated areas were investigated in this study. Temperature of the MC4 connectors was also analysed.

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