Practical, Low-Cost Fault Injection Attacks on Personal Smart Devices

Fault attacks are traditionally considered under a threat model that assumes the device under test is in the possession of the attacker. We propose a variation on this model. In our model, the attacker integrates a fault injection circuit into a malicious field-replaceable unit, or FRU, which is later placed by the victim in close proximity to their own device. Examples of devices which incorporate FRUs include interface cards in routers, touch screens and sensor assemblies in mobile phones, ink cartridges in printers, batteries in health sensors, and so on. FRUs are often installed by after-market repair technicians without properly verifying their authenticity, and previous works have shown they can be used as vectors for various attacks on the privacy and integrity of smart devices. We design and implement a low-cost fault injection circuit suitable for placement inside a malicious FRU, and show how it can be used to practically extract secrets from a privileged system process through a combined hardware-software approach, even if the attacker software application only has user-level permissions. Our prototype produces highly effective and repeatable attacks, despite its cost being several orders of magnitude less than that of commonly used fault injection analysis lab setups. This threat model allows fault attacks to be carried out remotely, even if the device under test is in the hands of the victim. Considered together with recent advances in software-only fault attacks, we argue that resistance to fault attacks should be built into additional classes of devices.

ANALISIS MODAL DAN HARMONIK SEBUAH RANCANGAN FIXTURE UJI VIBRASI UNIVERSAL MENGGUNAKAN METODE ELEMEN HINGGA

Fixture uji vibrasi harus dapat memegang device under test (DUT) selama proses pengujian dan sesuai dengan kondisi aslinya. Umumnya fixture uji vibrasi yang dibuat harus sesuai dengan geometri DUT. Oleh karena fixture uji vibrasi dibuat secara khusus untuk DUT tertentu, maka hal ini membuat proses uji vibrasi menjadi panjang alurnya dan lama pelaksanaannya. Selain itu, hal tersebut juga menyebabkan tingginya biaya untuk pembuatan fixture baru. Salah satu solusi dari masalah ini adalah dengan membuat fixture uji vibrasi yang bersifat universal. Fixture uji vibrasi yang bersifat universal dirancang mampu digunakan untuk hampir semua bentuk DUT. Fixture tersebut akan digunakan pada pengujian kategori S standar DO-160G section vibrasi yang memiliki rentang pengujian 5-500 Hz sehingga harus memiliki frekuensi natural di atas 500 Hz. Dalam studi ini dilakukan analisis sebuah rancangan fixture uji vibrasi yang bersifat universal mengunakan metode elemen hingga. Analisis dilakukan untuk fixture uji vibrasi universal berukuran 600 mm x 600 mm menggunakan metode analisis modal dan harmonik pada rentang frekuensi 5 Hz - 2000 Hz, kemudian dilakukan analisis kemampuan aktual sistem uji vibrasi berdasarkan massa fixture. Dua jenis material yaitu paduan aluminium dan paduan magnesium digunakan dalam studi ini. Hasil studi menunjukkan bahwa performa fixture yang menggunakan material Al 6061 tidak jauh berbeda dengan material Mg. Frekuensi natural yang diperoleh untuk fixture bermaterial Al 6061 adalah 975.94 Hz sedangkan untuk material paduan Mg adalah 996.88 Hz dengan selisih sebesar 2.14%, keduanya memenuhi kebutuhan pengujian vibrasi DO-160G kategori S. Analisis harmonik menghasilkan perbedaan amplitudo respon yang tidak signifikan yaitu di bawah 0.6‰. Fixture bermaterial logam paduan Mg lebih ringan daripada material Al 6061 sehingga menghasilkan kemampuan aktual sistem uji vibrasi yang lebih tinggi. Logam paduan Mg dipilih menjadi kandidat utama material fixture uji vibrasi universal yang akan dimanufaktur karena mampu menghasilkan kemampuan aktual sistem uji vibrasi yang lebih tinggi.

Reactive power transformation using а passive electronic transducer

Transformation of reactive power into active power, which can be used to perform work for various purposes, is of practical use. Goal. The aim of the work is analysis of the processes of resonant conversion of reactive power into active power in the proposed converter circuit. Methodology. A practical solution to this problem can be real-ized using a converter circuit consisting of two in-ductively coupled parallel and series resonant circuits. The use of a parallel circuit with resonance currents minimizes the impact on the processes in the reactive power source. The use of a series circuit with a voltage resonance allows maximizing the original active power in the converter load. Results. The simplest scheme of a passive electronic converter of reactive power into active power is proposed. The conditions are determined, whose fulfillment minimizes the influence of the proposed scheme on the processes in the reactive power source at the maxi-mum current in the converter load. Originality. Efficiency of the device under test means maximum cur-rent and power in the load with minimum impact on the inductance of the reactive power source. Practical value. The parameters of a real circuit have been calculated, which allows for practically lossless conversion of reactive power into active power with a minimum effect on the current in the source.

Electrothermal analysis of integrated circuits: a realization by infrared thermography

The International Technology Roadmap for Silicon (ITRS) predicted that by the year 2016, a high-performance chip could dissipate as much as 300 W/cm² of heat. Another more noticeable thermal issue in IC's is the uneven temperature distribution. Increased power dissipation and greater temperature variation highlight the need for electrothermal analysis of electronic components. The goal of this research is to develop an experimental infrared measurement technique for the thermal and electrothermal analysis of electronic circuits. The objective of the electrothermal analysis is to represent the behavior of the temperature dependent characteristics of electronic device in near real work condition. An infrared (IR) thermography setup to perform the temperature distribution analysis and power dissipation measurement of the device under test is proposed in this reasearch. The system is based on a transparent oil heatsink which captures the thermal profile and run-time power dissipation from the device under test with a very fine degree of granularity. The proposed setup is used to perform the thermal analysis and power measurement of an Intel Dual Core E2180 processor. The power dissipation of the processor is obtained by calculating and measuring the heat transfer coefficient of the oil heatsink. Moreover, the power consumption of the processor is measured by isolating the current used by the CPU at run time. A three-dimensional fininte element thermal model is developed to simulate the thermal properties of the processor. The results obtained using this simulation is compared to the experimental results from IR thermography. A methodology to perform electrothermal analysis on integrated circuits is introduced. This method is based on coupling a standard electrical simulator, which is often used in the design process, and IR thermography system through an efficient interface program. The proposed method is capable of updating the temperature dependent parameters of device in near real time. The proposed method is applied to perform electrothermal analysis of a power MOSFET to measure the temperature distribution and the device performance. The DC characteristics of the device are investigated. The obtained results indicated that the operating point, I-V characteristics and power dissipation of the MOSFET vary significantly with temperature.

Electrothermal analysis of integrated circuits: a realization by infrared thermography

The International Technology Roadmap for Silicon (ITRS) predicted that by the year 2016, a high-performance chip could dissipate as much as 300 W/cm² of heat. Another more noticeable thermal issue in IC's is the uneven temperature distribution. Increased power dissipation and greater temperature variation highlight the need for electrothermal analysis of electronic components. The goal of this research is to develop an experimental infrared measurement technique for the thermal and electrothermal analysis of electronic circuits. The objective of the electrothermal analysis is to represent the behavior of the temperature dependent characteristics of electronic device in near real work condition. An infrared (IR) thermography setup to perform the temperature distribution analysis and power dissipation measurement of the device under test is proposed in this reasearch. The system is based on a transparent oil heatsink which captures the thermal profile and run-time power dissipation from the device under test with a very fine degree of granularity. The proposed setup is used to perform the thermal analysis and power measurement of an Intel Dual Core E2180 processor. The power dissipation of the processor is obtained by calculating and measuring the heat transfer coefficient of the oil heatsink. Moreover, the power consumption of the processor is measured by isolating the current used by the CPU at run time. A three-dimensional fininte element thermal model is developed to simulate the thermal properties of the processor. The results obtained using this simulation is compared to the experimental results from IR thermography. A methodology to perform electrothermal analysis on integrated circuits is introduced. This method is based on coupling a standard electrical simulator, which is often used in the design process, and IR thermography system through an efficient interface program. The proposed method is capable of updating the temperature dependent parameters of device in near real time. The proposed method is applied to perform electrothermal analysis of a power MOSFET to measure the temperature distribution and the device performance. The DC characteristics of the device are investigated. The obtained results indicated that the operating point, I-V characteristics and power dissipation of the MOSFET vary significantly with temperature.

Optimised calibration programmes for comparators for instrument transformers

Traditionally, instrument transformers are calibrated using bridges. By definition, bridges use the null method of measurement. The traditional calibration programme for instrument transformer bridges characterise namely this null measurement. Many new commercial comparators for instrument transformer use a very different method. They sample the secondary signals of reference and device under test (dut) transformer independently. Based on the samples, magnitude and phase of both signals are determined. Ratio error and phase displacement are calculated. Consequently, the significance of their calibration using the traditional calibration programme is limited. Moreover, the operating range of modern comparators is much larger than that of bridges. The additional versatility cannot be used without an adapted calibration programme. This article analyses the calibration programmes for both technologies. An experimental study confirms both the suitability of the new calibration programme and the need to chose the calibration programme depending on the technology of the device to be calibrated. The conclusion is very general and applies to all measurement problems where an operating principle is replaced by another – when changing the operating principle, it is important to check the calibration programme and adapt it if necessary.