Magnetic and electronic properties of Mn2Sn thin films: First-principles calculations and high temperature series expansions

2018 ◽  
Vol 56 (5) ◽  
pp. 1985-1989 ◽  
Author(s):  
R. Masrour ◽  
E.K. Hlil ◽  
A. Jabr ◽  
M. Hamedoun ◽  
A. Benyoussef ◽  
...  
2020 ◽  
Vol 10 (6) ◽  
pp. 2097
Author(s):  
Mi-An Xue ◽  
Xiaoli Yuan ◽  
Cheng Zhong ◽  
Peng Wan

Co2Zr and Co2Ti are both cubic crystals with a Cu2Mg-type structure. The elastic, thermodynamic and electronic properties of the intermetallic compounds Co2Zr and Co2Ti are investigated by using ab initio plane-wave pseudopotential density functional theory (PWPDFT) and generalized gradient approximation (GGA) under high temperature and pressure. The partially calculated results are consistent with the available experimental data. The elastic properties of Co2Zr and Co2Ti under high pressure were first studied by first principles calculations. The results indicate that the elastic constants, elastic modulus and Poisson’s ratio are functions of pressure, indicating that the effect of pressure on the ductility and anisotropy is significant. The thermodynamic properties are also calculated by the quasi-harmonic Debye model. In the range of 0~100 GPa pressure and 0~1500 K temperature, the Debye temperature Θ, the heat capacity CV and the thermal expansion α vary with pressure and temperature. Co2Ti has a higher Debye temperature than Co2Zr under the same pressure. Decreasing temperature and increasing pressure have the same effects on CV and α. The electron density difference and density of states of Co2Zr and Co2Ti are finally investigated. The results show that both Co2Zr and Co2Ti are typically metal crystals but Co2Zr has greater covalence than Co2Ti.


RSC Advances ◽  
2017 ◽  
Vol 7 (47) ◽  
pp. 29496-29504 ◽  
Author(s):  
Zhuohan Ding ◽  
Yuanyuan Cui ◽  
Dongyun Wan ◽  
Hongjie Luo ◽  
Yanfeng Gao

We present an effective strategy to modify the electronic properties of VO2(B) by inducing elastic strain with TiO2(A) buffer layer.


2020 ◽  
Vol 34 (20) ◽  
pp. 2050198
Author(s):  
Jian-Rong Zhang ◽  
Wei-Ming Liu ◽  
Li-Dong Ma ◽  
Qion Yang ◽  
Yan-Wei Chen ◽  
...  

First-principles calculations are performed to study the effects of defect on the structure and electronic properties of Ti3SiC2. The calculations show that the formation energy of Si vacancy is minimal compared with the Ti or C vacancies in Ti3SiC2. The defects of Si layer also can be formed under high-temperature or irradiation environments. The C-layers or Ti-layers are almost impossible to form. If the Si vacancy or Si layers are formed, they prefer to be substituted by the O and H atoms to form the MXene structure, and the unit cell of Ti3SiC2 lattice constant decreases in c-direction. However, it has quite slight effect on electronic properties of Ti3SiC2. The He impurities are almost impossible to occupy the Si vacancies, because the formation energy are 50.860 eV for one layer of Si atoms substituted by the He atoms. This type of defect leads to the lattice constant of Ti3SiC2 in c-direction increasing considerably. Therefore, Ti3SiC2 is a suitable candidate for nuclear materials because of the high-formation energies of He impurities under irradiation environment.


2019 ◽  
Author(s):  
Henrik Pedersen ◽  
Björn Alling ◽  
Hans Högberg ◽  
Annop Ektarawong

Thin films of boron nitride (BN), particularly the sp<sup>2</sup>-hybridized polytypes hexagonal BN (h-BN) and rhombohedral BN (r-BN) are interesting for several electronic applications given band gaps in the UV. They are typically deposited close to thermal equilibrium by chemical vapor deposition (CVD) at temperatures and pressures in the regions 1400-1800 K and 1000-10000 Pa, respectively. In this letter, we use van der Waals corrected density functional theory and thermodynamic stability calculations to determine the stability of r-BN and compare it to that of h-BN as well as to cubic BN and wurtzitic BN. We find that r-BN is the stable sp<sup>2</sup>-hybridized phase at CVD conditions, while h-BN is metastable. Thus, our calculations suggest that thin films of h-BN must be deposited far from thermal equilibrium.


2021 ◽  
Vol 606 ◽  
pp. 412825
Author(s):  
Wei-Hong Liu ◽  
Wei Zeng ◽  
Fu-Sheng Liu ◽  
Bin Tang ◽  
Qi-Jun Liu ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document