Theoretical study of a molecular junction with asymmetric current/voltage characteristics

2012 ◽  
Vol 549 ◽  
pp. 1-5 ◽  
Author(s):  
Vincenzo Barone ◽  
Ivo Cacelli ◽  
Alessandro Ferretti ◽  
Michele Visciarelli
Keyword(s):  
Theoretical Study ◽  
Molecular Junction ◽  
Current Voltage ◽  
Current Voltage Characteristics

scholarly journals Investigation, analysis and comparison of current-voltage characteristics for Au/Ni/GaN Schottky structure using I-V-T simulation

2019 ◽  
Vol 37 (3) ◽  
pp. 496-502 ◽  
Author(s):  
A. Sadoun ◽  
S. Mansouri ◽  
M. Chellali ◽  
N. Lakhdar ◽  
A. Hima ◽  
...  
Keyword(s):  
Experimental Data ◽  
Barrier Height ◽  
Theoretical Study ◽  
Series Resistance ◽  
Electrical Parameters ◽  
Current Voltage ◽  
Temperature Ranges ◽  
Current Voltage Characteristics ◽  
Schottky Structure ◽  
Good Agreement

AbstractIn this work, we have presented a theoretical study of Au/Ni/GaN Schottky diode based on current-voltage (I-V) measurement for temperature range of 120 K to 400 K. The electrical parameters of Au/Ni/GaN, such as barrier height (Φb), ideality factor and series resistance have been calculated employing the conventional current-voltage (I-V), Cheung and Chattopadhyay method. Also, the variation of Gaussian distribution (P (Φb)) as a function of barrier height (Φb) has been studied. Therefore, the modified ( {( {\ln \left( {{{{\rm{I}}_0 } \over {{\rm{T}}^2 }}} \right) - \left( {{{{\rm{q}}^2 \sigma _{{\rm{s}}0}^2 } \over {2{\rm{kT}}^2 }}} \right) = \ln ( {{\rm{AA}}^*} ) - {{{\rm{q}}\emptyset_{{\rm B}0} } \over {{\rm{kT}}}}} ){\rm{vs}}.( {{1 \over {{\rm{kT}}}}} )} ) relation has been extracted from (I-V) characteristics, where the values of ΦB0 and {\rm{A}}_{{\rm{Simul}}}^* have been found in different temperature ranges. The obtained results have been compared to the existing experimental data and a good agreement was found.

scholarly journals Theoretical Study on Effect of Defective Connection to Reservoirs in an Atomic-Scale Conductor

2017 ◽  
Vol 2017 ◽  
pp. 1-6
Author(s):  
Masato Morifuji
Keyword(s):  
Green's Function ◽  
Function Method ◽  
Theoretical Study ◽  
Wave Functions ◽  
Atomic Scale ◽  
Complex Task ◽  
Two Dimensional ◽  
Resistance Change ◽  
Current Voltage ◽  
Current Voltage Characteristics

We theoretically investigate the effect of a defect at the interface between a conductor and reservoirs in an atomic-scale device. Since fabrication of atomic-scale contacts is a complex task, there could be defects at the interface between the conductor and reservoirs. Such defective contacts will make it difficult to measure currents properly. In this paper, we calculate current-voltage characteristics in two-dimensional devices with a defective connection to reservoirs by using the nonequilibrium Green’s function method. Results show that the magnitude of resistance change depends on the amplitude of quantized wave functions at the position of the defect.

Sign in / Sign up

Export Citation Format

Share Document