Scaling the microwave plasma-assisted chemical vapor diamond deposition process to 150–200 mm substrates

2008 ◽  
Vol 17 (4-5) ◽  
pp. 520-524 ◽  
Author(s):  
D. King ◽  
M.K. Yaran ◽  
T. Schuelke ◽  
T.A. Grotjohn ◽  
D.K. Reinhard ◽  
...  
Keyword(s):  
Microwave Plasma ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Diamond Deposition

The Control Of Intrinsic Stresses In Cvd Diamond Films With Multistep Processing

1995 ◽  
Vol 416 ◽  
Author(s):  
S. Nijhawan ◽  
S. M. Jankovsky ◽  
B. W. Sheldon
Keyword(s):  
Thermal Stresses ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Annealing Treatment ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Internal Stresses ◽  
Tensile Stresses ◽  
Si Substrates

ABSTRACTThe role of intrinsic stresses in diamond films is examined. The films were deposited on (100) Si substrates by microwave plasma-enhanced chemical vapor deposition. The total internal stresses (thermal and intrinsic) were measured at room temperature with the bending plate method. The thermal stresses are compressive and arise due to the mismatch in thermal expansion coefficient of film and substrate. The intinsic stresses were tensile and evolved during the deposition process. These stresses increased with increasing deposition time. A 12 hour intermediate annealing treatment was found to reduce the tensile stresses considerably. The annealing treatment is most effective when the diamond crystallites are undergoing impingement and coalescence. This is consistent with the theory that the maximum tensile stresses are associated with grain boundary energetics.

Effect of Two-Step Deposition Process on Morphology and Optical Properties of Nanostructured Diamond Films

2013 ◽  
Vol 651 ◽  
pp. 148-153 ◽  
Author(s):  
S. Tipawan Khlayboonme ◽  
Wicharn Techitdheera ◽  
Warawoot Thowladda
Keyword(s):  
Optical Properties ◽  
Carbon Content ◽  
Microwave Plasma ◽  
Plasma Reactor ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Single Step ◽  
Second Step ◽  
Step Process

The morphology and optical properties of nanostructured diamond films affected by the two-step deposition process with changing CH4 concentration were investigated. The CH4 concentration was 1% for the first step and 2% for the second step. The films were prepared by chemical vapor deposition in a microwave plasma reactor with a CH4/H2 gas mixture. Nanocrystalline columnar-structured diamond film with lowering of sp2-bonded carbon content was achieved by the two-step deposition process. Unlike that of the single-step process with 1%CH4, the two-step process promoted the morphology to more uniform and smoother film. The two-step process increased the higher grain boundary as well as decreased the sp2-bonded carbon content in the film, as compared with the single-step process with 2%CH4Subscript text.

Optical emission spectroscopy during the bias-enhanced nucleation of diamond microcrystals by microwave plasma chemical vapor deposition process

1996 ◽  
Vol 11 (11) ◽  
pp. 2852-2860 ◽  
Author(s):  
H. C. Barshilia ◽  
B. R. Mehta ◽  
V. D. Vankar
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Optical Emission ◽  
Deposition Process ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition

Microwave plasma chemical vapor deposition (MWPCVD) process has been used to grow diamond thin films on silicon substrates from CH4–H2 gas mixture. Bias-enhanced nucleation (BEN) pretreatment has been used to increase the density of diamond nuclei. Various species in the CH4–H2 plasma have been identified using optical emission spectroscopy (OES), and their effect on the film microstructure has been studied. During the pretreatment process the emission intensities of CH, CH+, C2, H, and H2* species have been found to increase significantly for a negative dc bias voltage |VB| > 60 V. The higher concentration of excited species and the associated effects play a significant role in the growth process. A very thin layer of a-C containing predominant sp3 bonded carbon species in the initial stages of the growth is found to be present in these films. The microstructure of the films has been found to be very sensitive to the biasing conditions.

Progress on Preferential Etching and Phosphorus Doping of Single Crystal Diamond

2014 ◽  
Vol 1634 ◽  
Author(s):  
Timothy A. Grotjohn ◽  
Dzung T. Tran ◽  
M. Kagan Yaran ◽  
Thomas Schuelke
Keyword(s):  
Substrate Temperature ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Microwave Plasma ◽  
Hydrogen Plasma ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Growth Conditions ◽  
Room Temperature Resistivity ◽  
Single Crystal Diamond

ABSTRACTPhosphorus is incorporated into single crystal diamond during epitaxial growth at higher concentrations on the (111) crystallographic surface than on the (001) crystallographic surface. To form n+-type regions in diamond for semiconductor devices it is beneficial to deposit on the (111) surface. However, diamond deposition is faster and of higher quality on the (001) surface. A preferential etch method is described that forms inverted pyramids on the (001) surface of a substrate diamond crystal, which opens (111) faces for improved phosphorus incorporation. The preferential etching occurs on the surface in regions where a nickel film is deposited. The etching is performed in a microwave generated hydrogen plasma operating at 160 Torr with the substrate temperature in the range of 800-950 °C. The epitaxial growth of diamond with high phosphorus concentrations exceeding 1020 cm-3 is performed using a microwave plasma-assisted chemical vapor deposition process. Successful growth conditions were achieved with a feedgas mixture of 0.25% methane, 500 ppm phosphine and hydrogen at a pressure of 160 Torr and a substrate temperature of 950-1000°C. The room temperature resistivity of the phosphorus-doped diamond is 120-150 Ω-cm and the activation energy is 0.027 eV.

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