The role of metal interlayer on thermal stress, film structure, wettability and hydrogen content for diamond like carbon films on different substrate

2009 ◽  
Vol 18 (2-3) ◽  
pp. 407-412 ◽  
Author(s):  
Chehung Wei ◽  
Yi-Shun Wang ◽  
Fong-Cheng Tai
Keyword(s):  
Thermal Stress ◽  
Hydrogen Content ◽  
Carbon Films ◽  
Film Structure ◽  
Diamond Like Carbon

An Study of Influence of Imperfections on the Delamination of Diamond-Like Carbon Films

2002 ◽  
Vol 719 ◽  
Author(s):  
Myoung-Woon Moon ◽  
Kyang-Ryel Lee ◽  
Jin-Won Chung ◽  
Kyu Hwan Oh
Keyword(s):  
Cross Sections ◽  
Focused Ion Beam ◽  
Imaging System ◽  
Ion Beam ◽  
Carbon Films ◽  
Diamond Like Carbon ◽  
Glass Substrates ◽  
Atomic Force ◽  
Initiation And Propagation

AbstractThe role of imperfections on the initiation and propagation of interface delaminations in compressed thin films has been analyzed using experiments with diamond-like carbon (DLC) films deposited onto glass substrates. The surface topologies and interface separations have been characterized by using the Atomic Force Microscope (AFM) and the Focused Ion Beam (FIB) imaging system. The lengths and amplitudes of numerous imperfections have been measured by AFM and the interface separations characterized on cross sections made with the FIB. Chemical analysis of several sites, performed using Auger Electron Spectroscopy (AES), has revealed the origin of the imperfections. The incidence of buckles has been correlated with the imperfection length.

Role of microstructure on the oxidation behavior of microwave plasma synthesized diamond and diamond-like carbon films

1990 ◽  
Vol 5 (11) ◽  
pp. 2445-2450 ◽  
Author(s):  
Rao R. Nimmagadda ◽  
A. Joshi ◽  
W. L. Hsu
Keyword(s):  
Oxidation Behavior ◽  
Microwave Plasma ◽  
Natural Diamond ◽  
Diamond Films ◽  
Cvd Diamond ◽  
Carbon Films ◽  
Diamond Like Carbon ◽  
Gravimetric Analysis ◽  
Oxidation Rates

Oxidation kinetics of microwave plasma assisted CVD diamond and diamond-like carbon (DLC) films in flowing oxygen were evaluated in the temperature range of 500 to 750 °C and were compared with those of graphite and natural diamond. The diamond and DLC films were prepared using CH4/H2 ratios of 0.1, 0.25, 0.5, 1.0, and 2.0%. The films deposited at 0.1% ratio had a faceted crystalline structure with high sp3 content and as the ratio increased toward 2%, the films contained more and more fine crystalline sp2 bonded carbon. The oxidation rates were determined by thermal gravimetric analysis (TGA), which shows that the films deposited at ratios of 2, 1, and 0.5% oxidized at high rates and lie between the rates of natural diamond and graphite. The oxidation rate decreased with lower CH4/H2 ratio and the films deposited at 0.25 and 0.1% exhibited the lowest oxidation rates associated with the highest activation energies in the range of 293–285 kJ/mol · K. The oxidation behavior of microwave plasma assisted diamond films was similar to that of DC plasma assisted CVD diamond films. The results suggest that the same mechanism of oxidation is operational in both DC and microwave plasma assisted diamond films and is probably related to the microstructure and preferred orientation of the crystallites.

THERMAL STRESS RELAXATION BY A COMPOSITION-GRADED INTERMEDIATE LAYER

2000 ◽  
Vol 14 (19) ◽  
pp. 685-692 ◽  
Author(s):  
Q.-R. HOU ◽  
J. GAO
Keyword(s):  
Thermal Stress ◽  
Stress Distribution ◽  
Intermediate Layer ◽  
Carbon Films ◽  
Composition Profile ◽  
Thin Layers ◽  
Diamond Like Carbon ◽  
Silicon Substrates ◽  
Adjacent Layer ◽  
Thermal Stress Distribution

A simple model has been proposed to calculate the thermal stress distribution for diamond-like carbon films deposited on silicon substrates with a composition-graded intermediate layer. In this model, the intermediate layer is divided into many thin layers, and the thermal stress in one thin layer is caused by the difference in thermal expansion coefficients between this layer and the adjacent layer. It is found that the thermal stress distribution in the intermediate layer is strongly dependent on the composition profile of the intermediate layer. By choosing a proper composition profile, the thermal stress near the interlayer/substrate interface will be very small and this small stress is beneficial to enhancing adhesion of the film. For diamond-like carbon films deposited on silicon substrates, the experimental results are in agreement with the theoretical prediction qualitatively.

Role of Surface Hydrogen Bonds in Determining the Friction Behaviors of Hydrogenated Diamond-like Carbon Films

2012 ◽  
Vol 29 (5) ◽  
pp. 056201
Author(s):  
Cheng-Bing Wang ◽  
Jing Shi ◽  
Zhong-Rong Geng ◽  
Jun-Yan Zhang
Keyword(s):  
Hydrogen Bonds ◽  
Carbon Films ◽  
Diamond Like Carbon ◽  
Surface Hydrogen

Diamond-like carbon films prepared by rf substrate biasing in an ECR discharge

1990 ◽  
Vol 5 (11) ◽  
pp. 2441-2444 ◽  
Author(s):  
W. Varhue ◽  
P. Pastel
Keyword(s):  
Band Gap ◽  
Hydrogen Content ◽  
Optical Band Gap ◽  
Carbon Films ◽  
Atomic Fraction ◽  
Diamond Like Carbon ◽  
Pure Methane

The optical band gap, density, and hydrogen content of diamond-like carbon films have been controllably varied by rf biasing the substrate in an ECR discharge of pure methane. The optical band gap varied from 2.7 to 1.2 eV, the density from 1.4 to 2.2 g/cm3, and the atomic fraction of hydrogen from 50 to 5%. The range of measured values is in agreement with those predicted by both the random covalent network and defected graphite models.

Effect of Amorphous Silicon Carbide Interlayer on Diamond-Like Carbon Film Structure and Film Hardness

2019 ◽  
Vol 825 ◽  
pp. 99-105
Author(s):  
Yutaroh Kimura ◽  
Xia Zhu ◽  
Hiromichi Toyota ◽  
Ryoya Shiraishi ◽  
Yukiharu Iwamoto ◽  
...  
Keyword(s):  
Thin Film ◽  
Film Thickness ◽  
Hydrogen Content ◽  
Peak Position ◽  
Film Structure ◽  
Diamond Like Carbon ◽  
Interlayer Thickness ◽  
Layer Film ◽  
Dlc Film ◽  
Film Hardness

This study was performed to improve the adhesiveness of a diamond-like carbon (DLC, a-C:H) layer film with an a-SiC interlayer. In previous studies, an a-SiC/DLC layer film was formed and changes in the DLC film structure and hardness caused by the thickness of the a-SiC layer were examined. After the a-SiC interlayer thickness increased and the G-peak position shifted to a lower frequency, the peak began shifting to higher frequencies. The G-peak position reached a minimum frequency at a film thickness of approximately 0.3 μm. In contrast, as the thickness of the a-SiC interlayer increased, the FWHM of the G-peak position increased almost monotonically and the number of sp3 bonds also increased. As the interlayer thickness increased, the hydrogen content in the DLC film increased, and then began decreasing, with the interlayer film thickness exhibiting a local maximum at approximately 0.3 μm. As for the DLC film hardness, a correlation between the hydrogen content and half width of the G-peak position was observed. When the hydrogen content was ≤40 at%, a positive correlation with the FWHM (G) was observed, and when the hydrogen content was 40 at% or above, a negative correlation with FWHM (G) was found. The adhesiveness of the DLC film and substrate was improved by forming an a-SiC thin film as an interlayer. The effects of the a-SiC thin film on DLC film quality were determined.

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