scholarly journals Dataset on critical parameters of dispersion stability of Cu/Al2O3 nanofluid and hybrid nanofluid for various ultra-sonication times

Data in Brief ◽  
2019 ◽  
Vol 22 ◽  
pp. 863-865 ◽  
Author(s):  
F.R. Siddiqui ◽  
C.Y. Tso ◽  
K.C. Chan ◽  
S.C. Fu ◽  
Christopher Y.H. Chao
Keyword(s):  
Dispersion Stability ◽  
Critical Parameters ◽  
Hybrid Nanofluid ◽  
Al2o3 Nanofluid

Dispersion and Thermal Conductivity of Al2O3 and TiO2 Binary Nanofluids

2012 ◽  
Vol 531-532 ◽  
pp. 442-445 ◽  
Author(s):  
Liu Yang ◽  
Kai Du
Keyword(s):  
Thermal Conductivity ◽  
Effective Thermal Conductivity ◽  
Storage Time ◽  
Nano Particles ◽  
Dispersion Stability ◽  
Hot Wire ◽  
Ammonia Content ◽  
Wire Method ◽  
Al2o3 Nanofluid

The dispersion stabilities and thermal conductivities of Al2O3 and TiO2 ammonia water nanofluids are investigated by the absorbency index methods and transient double-hot-wire method, respectively. The results show that the dispersion stabilities of the two kinds of binary nanofluids are greatly improved by adding surfactants or increasing the ammonia content. The effective thermal conductivity ratios of the two kind of binary nanofluids increase with the increase of the content of nano-particles. It is the same with the increase of the ammonia content. The thermal conductivity will decrease with the rising of storage time by the role of natural sedimentation. The thermal conductivity of TiO2 nanofluid is more insensitive to the storage time than Al2O3 nanofluid because of its better dispersion stability

New Insights into the Nature of the Band Gap of CuGeO3 Nanoparticles: Synthesis, Electronic Structure, and Optical and Photocatalytic Properties

2019 ◽  
Author(s):  
Victor Y. Suzuki ◽  
Luís Henrique Cardozo Amorin ◽  
Natália H. de Paula ◽  
Anderson R. Albuquerque ◽  
Julio Ricardo Sambrano ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Band Gap ◽  
Material Design ◽  
Photocatalytic Properties ◽  
Critical Parameters ◽  
Synthetic Approach ◽  
Microwave Assisted ◽  
Theoretical Approaches ◽  
Nanoparticles Synthesis ◽  
First Time

<p>We report, for the first time, new insights into the nature of the band gap of <a>CuGeO<sub>3</sub> </a>(CGO) nanocrystals synthesized from a microwave-assisted hydrothermal method in the presence of citrate. To the best of our knowledge, this synthetic approach has the shortest reaction time and it works at the lowest temperatures reported in the literature for the preparation of these materials. The influence of the surfactant on the structural, electronic, optical, and photocatalytic properties of CGO nanocrystals is discussed by a combination of experimental and theoretical approaches, and that results elucidates the nature of the band gap of synthetized CGO nanocrystals. We believe that this particular strategy is one of the most critical parameters for the development of innovative applications and that result could shed some light on the emerging material design with entirely new properties.</p> <p><b> </b></p>

Fundamental Considerations for CDM Failure in 90nm Products

2006 ◽  
Author(s):  
Nobuyuki Wakai ◽  
Yuji Kobira ◽  
Hidemitsu Egawa ◽  
Masayoshi Tsutsumi
Keyword(s):  
Breakdown Voltage ◽  
High Speed ◽  
Gate Oxide ◽  
Critical Parameters ◽  
Protection Device ◽  
Oxide Breakdown ◽  
Technology Products ◽  
Charged Device ◽  
Device Size ◽  
Fundamental Consideration

Abstract Fundamental consideration for CDM (Charged Device Model) breakdown was investigated with 90nm technology products and others. According to the result of failure analysis, it was found that gate oxide breakdown was critical failure mode for CDM test. High speed triggered protection device such as ggNMOS and SCR (Thyristor) is effective method to improve its CDM breakdown voltage and an improvement for evaluated products were confirmed. Technological progress which is consisted of down-scaling of protection device size and huge number of IC pins of high function package makes technology vulnerable and causes significant CDM stress. Therefore, it is expected that CDM protection designing tends to become quite difficult. In order to solve these problems in the product, fundamental evaluations were performed. Those are a measurement of discharge parameter and stress time dependence of CDM breakdown voltage. Peak intensity and rise time of discharge current as critical parameters are well correlated their package capacitance. Increasing stress time causes breakdown voltage decreasing. This mechanism is similar to that of TDDB for gate oxide breakdown. Results from experiences and considerations for future CDM reliable designing are explained in this report.

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