Studying the kinetics of the ion transfer across the liquid|liquid interface by means of thin film-modified electrodes

AbstractIn the theoretical model it is assumed that a graphite disk electrode is covered by a thin film of solution of decamethylferrocene (dmfc) and some electrolyte CX in nitrobenzene and immersed in an aqueous solution of the electrolyte MX. Oxidation of dmfc is accompanied by the transfer of anion X − from water into nitrobenzene since it is also assumed that cations dmfc + and C + are insoluble in water and cation M + is insoluble in nitrobenzene. Kinetic parameters of the electrode reaction can be determined if the total potential difference across the nitrobenzene/water interface is maintained constant by adding the electrolytes CX and MX in concentrations which are much higher than the initial concentration of dmfc in nitrobenzene.

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Growth kinetics of Al2Cu in an Al-1.5Cu thin film by in Situ TEM

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100151696 ◽

1993 ◽

Vol 51 ◽

pp. 1172-1173

Author(s):

M. Park ◽

S.J. Krause ◽

S.R. Wilson

Keyword(s):

Thin Film ◽

In Situ Tem ◽

Collector Plate ◽

Transmission Electron ◽

Device Processing ◽

Corrosion Susceptibility ◽

Precipitation Phenomena ◽

Semiconductor Chips ◽

Kinetics Of

Cu alloying in Al interconnection lines on semiconductor chips improves their resistance to electromigration and hillock growth. Excess Cu in Al can result in the formation of Cu-rich Al2Cu (θ) precipitates. These precipitates can significantly increase corrosion susceptibility due to the galvanic action between the θ-phase and the adjacent Cu-depleted matrix. The size and distribution of the θ-phase are also closely related to the film susceptibility to electromigration voiding. Thus, an important issue is the precipitation phenomena which occur during thermal device processing steps. In bulk alloys, it was found that the θ precipitates can grow via the grain boundary “collector plate mechanism” at rates far greater than allowed by volume diffusion. In a thin film, however, one might expect that the growth rate of a θ precipitate might be altered by interfacial diffusion. In this work, we report on the growth (lengthening) kinetics of the θ-phase in Al-Cu thin films as examined by in-situ isothermal aging in transmission electron microscopy (TEM).

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Reordering and Crystallization of Silicon Carbide Amorphized by Neutron Irradiation

MRS Proceedings ◽

10.1557/proc-650-r5.1 ◽

2000 ◽

Vol 650 ◽

Author(s):

Lance L. Snead ◽

Martin Balden

Keyword(s):

Thin Film ◽

Silicon Carbide ◽

Crystallization Kinetics ◽

Neutron Irradiation ◽

Onset Temperature ◽

Kinetics Of Crystallization ◽

Crystallization Onset Temperature ◽

Crystallization Onset ◽

Kinetics Of

ABSTRACTDensification and crystallization kinetics of bulk SiC amorphized by neutron irradiation is studied. The temperature of crystallization onset of this highly pure, fully amorphous bulk SiC was found to be between 875-885°C and crystallization is nearly complete by 950°C. In-situ TEM imaging confirms the onset of crystallization, though thin-film effects apparently alter the kinetics of crystallization above this temperature. It requires >1125°C for complete crystallization of the TEM foil. Annealing at temperatures between the irradiation and crystallization onset temperature is seen to cause significant densification attributed to a relaxation, or reordering, of the as-amorphized structure.

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An Organodiselenide Containing Electrolyte Enables Sulfurized Polyacrylonitrile Cathodes with Fast Redox Kinetics in Li-S batteries

Chemical Communications ◽

10.1039/d1cc03417k ◽

2021 ◽

Author(s):

Wei Zhang ◽

Qiang Wu ◽

Ziqi Zeng ◽

Chuang Yu ◽

Shijie Cheng ◽

...

Keyword(s):

Liquid Interface ◽

Electrolyte Additive ◽

Redox Kinetics ◽

Solid Liquid Interface ◽

Solid Liquid ◽

Kinetics Of

A soluble organoselenide compound, phenyl diselenide (PDSe), is employed as a soluble electrolyte additive to enhance the kinetics of sulfurized polyacrylonitrile cathode, in which radical exchange in the solid-liquid interface...

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Quantitative Study of Al/W Interaction In Si/SiO2/W-Ti/Al Thin Film System

MRS Proceedings ◽

10.1557/proc-119-153 ◽

1988 ◽

Vol 119 ◽

Cited By ~ 5

Author(s):

Hung-Yu Liu ◽

Peng-Heng Chang ◽

Jim Bohlman ◽

Hun-Lian Tsai

Keyword(s):

Thin Film ◽

Film System ◽

X Ray Diffraction ◽

Compound Formation ◽

X Ray ◽

Thin Film System ◽

Glancing Angle ◽

Integrated Intensity ◽

Al Thin Film ◽

Kinetics Of

AbstractThe interaction of Al and W in the Si/SiO2/W-Ti/Al thin film system is studied quantitatively by glancing angle x-ray diffraction. The formation of Al-W compounds due to annealing is monitored by the variation of the integrated intensity from a few x-ray diffraction peaks of the corresponding compounds. The annealing was conducted at 400°C, 450°C and 500°C from 1 hour to 300 hours. The kinetics of compound formation is determined using x-ray diffraction data and verified by TEM observations. We will also show the correlation of the compound formation to the change of the electrical properties of these films.

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