In this study, we implemented a high-performance two-terminal memristor device with a metal/insulator/metal (MIM) structure using a solution-derived In-Ga-Zn-Oxide (IGZO)-based nanocomposite as a resistive switching (RS) layer. In order to secure stable memristive switching characteristics, IGZO:N nanocomposites were synthesized through the microwave-assisted nitridation of solution-derived IGZO thin films, and the resulting improvement in synaptic characteristics was systematically evaluated. The microwave-assisted nitridation of solution-derived IGZO films was clearly demonstrated by chemical etching, optical absorption coefficient analysis, and X-ray photoelectron spectroscopy. Two types of memristor devices were prepared using an IGZO or an IGZO:N nanocomposite film as an RS layer. As a result, the IGZO:N memristors showed excellent endurance and resistance distribution in the 103 repeated cycling tests, while the IGZO memristors showed poor characteristics. Furthermore, in terms of electrical synaptic operation, the IGZO:N memristors possessed a highly stable nonvolatile multi-level resistance controllability and yielded better electric pulse-induced conductance modulation in 5 × 102 stimulation pulses. These findings demonstrate that the microwave annealing process is an effective synthesis strategy for the incorporation of chemical species into the nanocomposite framework, and that the microwave-assisted nitridation improves the memristive switching characteristics in the oxide-based RS layer.
High-Performance Resistive Switching in Solution-Derived IGZO:N Memristors by Microwave-Assisted Nitridation
